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测量了晶格匹配InAlN/GaN异质结肖特基接触的反向变温电流-电压特性曲线, 研究了反向漏电流的偏压与温度依赖关系. 结果表明: 1)电流是电压和温度的强函数, 饱和电流远大于理论值, 无法采用经典热发射模型解释; 2)在低偏压区, 数据满足
$\ln(I/E)\text{-}E^{1/2}$ 线性依赖关系, 电流斜率和激活能与Frenkel-Poole模型的理论值接近, 表明电流应该为FP机制占主导; 3)在高偏压区, 数据满足$ \ln(I/E^2)\text{-}E^{-1} $ 线性依赖关系, 电流斜率不随温度改变, 表明Fowler-Nordheim隧穿机制占主导; 4)反向电流势垒高度约为0.60 eV, 远低于热发射势垒高度2.91 eV, 表明可导位错应是反向漏电流的主要输运通道, 局域势垒由于潜能级施主态电离而被极大降低.In this paper, the temperature-dependent current-voltage (T-I-V) characteristics of lattice-matched InAlN/GaN heterostructure Schottky contact in a reverse direction are measured, and the voltage dependence and temperature dependence of the leakage current are studied. The obtained results are as follows.1) The reverse current is a strong function of voltage and temperature, and the saturation current is much larger than the theoretical value, which cannot be explained by the classical thermionic emission (TE) model. 2) In the low-bias region, the$ \ln(I/E)\text{-}E^{1/2} $ data points obey a good linear relationship, whose current slope and corresponding activation energy are close to the values predicted by the Frenkel-Poole (FP) model, indicating the dominant role of the FP emission mechanism. 3) In the high-bias region, the$ \ln(I/E^2)\text{-}E^{-1} $ data points also follow a linear dependence, but the current slope is a weak function of temperature, indicating that the Fowler-Nordheim tunneling mechanism should be mainly responsible for the leakage current. 4) The current barrier height is extracted to be about 0.60 eV, which is much lower than the value of 2.91 eV obtained from the TE model, confirming the primary leakage path of the conductive dislocations, where the localized barrier is significantly reduced due to the ionization of shallow donor-like traps.-
Keywords:
- reverse leakage current /
- bias and temperature /
- conductive dislocations /
- shallow donor state
[1] Gadanecz A, Bläsing J, Dadgar A, Hums C, Krost A 2007 Appl. Phys. Lett. 90 084505
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图 1 (a) InAlN/GaN肖特基势垒二极管横截面结构示意图; (b)俯视图
Fig. 1. (a) Schematic cross-section diagram of InAlN / GaN Schottky barrier diodes; (b) top view image of the devices.
图 2 (a) 不同温度下InAlN/GaN肖特基势垒二极管的I-V特性和常温下典型的C-V特性曲线; (b)电场与电压的函数关系图和n2 DEG对电压的依赖关系
Fig. 2. (a) The reverse I-V characteristics of InAlN / GaN Schottky diode measured at various temperatures and typical C-V curve at room temperature; (b)electric field and n2 DEG as a function of gate voltage.
图 3 不同温度下InAlN/GaN肖特基势垒二极管的反向饱和电流的理论值和实验值
Fig. 3. Theoretical and experimental reverse saturation current of InAlN/GaN Schottky diodes for different temperatures.
图 4 (a)不同温度下lnI和E1/2关系图; (b)电流斜率βSC
Fig. 4. (a) The relationship between lnI and E1/2 at different temperatures; (b) the corresponding current slope βSC.
图 5 (a)在不同温度下ln(I/E)和E1/2的关系; (b)相应的斜率βFP
Fig. 5. (a) The relationship between ln(I/E) and E1/2 at different temperatures; (b) the corresponding current slope βFP.
图 6 (a) GaN中可导位错模型示意图; (b) FP 发射电流输运过程示意图
Fig. 6. (a) Schematic band diagram of the conductive dislocations in GaN; (b) schematic transport process of the FP emission current
图 8 (a)在不同温度下的C-V曲线; (b)不同夹断电压所对应的电场关系
Fig. 8. (a) The C-V curves measured at different tempratures; (b) the corresponding electric field with different pinch-off voltages.
图 9 (a)不同温度下ln(I/E2)和E–1关系图; (b) FN隧穿有效势垒高度随温度的变化
Fig. 9. (a) The relationship between ln(I/E2) and E–1 at different temperatures; (b) the effective barrier height extracted based on FN tunneling model.
图 10 (a) FN 隧穿电流输运示意图; (b) EL mapping图(V = –14 V)
Fig. 10. (a) The schematic diagram of FN tunneling process; (b) the EL mapping image at V = –14 V.
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[1] Gadanecz A, Bläsing J, Dadgar A, Hums C, Krost A 2007 Appl. Phys. Lett. 90 084505
[2] Kuzmik J, Kostopoulos A, Konstantinidis G, et al. 2006 IEEE Trans. Electron Devices 53 422
Google Scholar
[3] Filippov I A, Shakhnov V A, Velikovskii L E, Brudnyi P A, Demchenko O I 2020 Russ. Phys. J. 63 94
Google Scholar
[4] Hums C, Bläsing J, Dadgar A, et al. 2007 Appl. Phys. Lett. 90 022105
Google Scholar
[5] Jeganathan K, Shimizu M 2014 AIP Adv. 4 097113
Google Scholar
[6] Wang R H, Saunier P, Tang Y, et al. 2011 IEEE Electron. Device Lett. 32 309
Google Scholar
[7] Hsu J W P, Manfra M J, Lang D V, et al. 2001 Appl. Phys. Lett. 78 1685
Google Scholar
[8] Kaun S W, Wong M H, Dasgupta S, Choi S, Chung R, Umesh K M, James S S 2011 Appl. Phys. Express 4 417
Google Scholar
[9] Zhang H, Miller E J, Yu E T 2006 J. Appl. Phys. 99 247
[10] Miller E J, Schaadt D M, Yu E T, Poblenz C, Elsass C, Speck J S 2002 J. Appl. Phys. 91 9821
Google Scholar
[11] Xu J X, Wang R, Zhang L, Zhang S Y, Zheng P H, Zhang Y, Song Y, Tong X D 2020 Appl. Phys. Lett. 117 023501
Google Scholar
[12] Miller E J, Yu E T, Waltereit P, Speck J S 2004 Appl. Phys. Lett. 84 535
Google Scholar
[13] Arslan E, Bütün S, Ozbay E 2009 Appl. Phys. Lett. 94 142106
Google Scholar
[14] Chen L L, Schrimpf R D, Fleetwood D M, et al. 2020 IEEE Trans. Electron Devices 67 841
Google Scholar
[15] Zhou Y, Xu Z, Li J T 2019 Appl. Phys. A 125 881
Google Scholar
[16] Kuzmik J 2001 IEEE Electron. Device Lett. 22 510
Google Scholar
[17] Ren J, Yan D, Yang G, Wang F X, Xiao S Q, Gu X F 2015 J. Appl. Phys. 117 123502
Google Scholar
[18] Yan D W, Lu H, Cao D S, Chen D J, Zhang R, Zheng Y D 2010 Appl. Phys. Lett. 97 023703
Google Scholar
[19] Arslan E, Altındal Ş, Özçelik S, Ozbay E 2009 J. Appl. Phys. 105 23705
Google Scholar
[20] 王翔, 陈雷雷, 曹艳荣, 羊群思, 朱培敏, 杨国锋, 王福学, 闫大为, 顾晓峰 2018 67 177202
Google Scholar
Wang X, Chen L L, Cao Y R, Yang Q S, Zhu P M, Yang G F, Wang F X, Yan D W, Gu X F 2018 Acta Phys. Sin. 67 177202
Google Scholar
[21] Saadaoui S, Fathallah O, Maaref H 2020 Mater. Sci. Semicond. Process. 115 105100
Google Scholar
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