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通过求解沟道的二维泊松方程得到沟道表面势和沟道反型层电荷, 建立了高k栅介质小尺寸绝缘体上锗(GeOI) p型金属氧化物半导体场效应晶体管(PMOSFET)的漏源电流解析模型. 模型包括了速度饱和效应、迁移率调制效应和沟长调制效应, 同时考虑了栅氧化层和埋氧层与沟道界面处的界面陷阱电荷、氧化层固定电荷对漏源电流的影响. 在饱和区和非饱和区, 漏源电流模拟结果与实验数据符合得较好, 证实了模型的正确性和实用性. 利用建立的漏源电流模型模拟分析了器件主要结构和物理参数对跨导、漏导、截止频率和电压增益的影响, 对GeOI PMOSFET的设计具有一定的指导作用.
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关键词:
- 绝缘体上锗p型金属氧化物半导体场效应晶体管 /
- 漏源电流模型 /
- 跨导 /
- 截止频率
An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.-
Keywords:
- germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor /
- drain current model /
- transconductance /
- cut-off frequency
[1] Paussa A, Conzatti F, Breda D, Vermiglio R, Esseni D, Palestri P 2010 IEEE Trans. Electron Dev. 57 3239
[2] Zhang J, He J, Zhou X Y, Zhang L N, Ma Y T, Chen Q, Zhang X K, Yang Z 2012 Chin. Phys. B 21 047303
[3] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[4] Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese) [陈卫兵, 徐静平, 邹晓, 李艳萍, 许胜国, 胡致富 2006 55 5036]
[5] Zhao Y Y, Qi M, Wang W B, Wang M, Zhang B 2012 Chin. Phys. B 21 018501
[6] Hu V P H, Fan M L, Su P, Chuang C T 2011 Low Power Electronics and Design International Symposium Fukuoka, Japan, August 1-3, 2011 p115
[7] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[8] Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta P A, Wong H S P, Saraswat K C 2011 IEEE Trans. Electron Dev. 58 59
[9] Wu Y S, Hsieh H Y, Hu V P H, Su P 2011 IEEE Electron Dev. Lett. 32 18
[10] Lime F, Ritzenthaler R, Ricoma M, Martinez F, Pascal F, Miranda E, Faynot O, Iñiguez B 2011 Solid State Electron. 57 61
[11] Ritzenthaler R, Lime F, Iñiguez B 2011 Proceedings of the 8th Spanish Conference on Electron Devices Palma de Mallorca, Spain, February 8-11, 2011 p1
[12] Zhang J, Zhang L, He J, Chan M 2010 J. Appl. Phys. 107 054507
[13] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[14] Roy A S, Sallese J M, Enz C C 2006 Solid State Electron. 50 687
[15] Daelea W V D, Royer C L, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S 2011 Solid State Electron. 59 25
[16] Lim K Y, Zhou X 2002 Microelectron. Reliab. 42 1857
[17] Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Arvet C, Tabone C, Previtali B, Loup V, Roure M C, Pouydebasque A, Lafond D, Vinet M, Clavelier L, Faynot O 2010 International Symposium on VLSI-TSA Hsinchu, April 26-28, 2010 p40
[18] Qi R, Dai Y H, Chen J N, Li J S 2010 Manuf. Appl. Dev. 35 534 (in Chinese) [齐锐, 代月花, 陈军宁, 李俊生 2010 器件制造与应用 35 534]
[19] Steegen A, Stucchi M, Lauwers A, Maex K 1999 Electron Devices Meeting IEDM '99. Technical Digest Washington, USA, December 5-8, 1999 p497
[20] Fan M M, Xu J P, Liu L, Bai Y R 2014 J. Semicond. 35 044004
[21] Thomas C, Haldar S, Khanna M, Rajesh S, Gupta K K, Gupta R S 1998 Microelectron. Reliab. 38 1955
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[1] Paussa A, Conzatti F, Breda D, Vermiglio R, Esseni D, Palestri P 2010 IEEE Trans. Electron Dev. 57 3239
[2] Zhang J, He J, Zhou X Y, Zhang L N, Ma Y T, Chen Q, Zhang X K, Yang Z 2012 Chin. Phys. B 21 047303
[3] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[4] Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese) [陈卫兵, 徐静平, 邹晓, 李艳萍, 许胜国, 胡致富 2006 55 5036]
[5] Zhao Y Y, Qi M, Wang W B, Wang M, Zhang B 2012 Chin. Phys. B 21 018501
[6] Hu V P H, Fan M L, Su P, Chuang C T 2011 Low Power Electronics and Design International Symposium Fukuoka, Japan, August 1-3, 2011 p115
[7] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[8] Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta P A, Wong H S P, Saraswat K C 2011 IEEE Trans. Electron Dev. 58 59
[9] Wu Y S, Hsieh H Y, Hu V P H, Su P 2011 IEEE Electron Dev. Lett. 32 18
[10] Lime F, Ritzenthaler R, Ricoma M, Martinez F, Pascal F, Miranda E, Faynot O, Iñiguez B 2011 Solid State Electron. 57 61
[11] Ritzenthaler R, Lime F, Iñiguez B 2011 Proceedings of the 8th Spanish Conference on Electron Devices Palma de Mallorca, Spain, February 8-11, 2011 p1
[12] Zhang J, Zhang L, He J, Chan M 2010 J. Appl. Phys. 107 054507
[13] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[14] Roy A S, Sallese J M, Enz C C 2006 Solid State Electron. 50 687
[15] Daelea W V D, Royer C L, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S 2011 Solid State Electron. 59 25
[16] Lim K Y, Zhou X 2002 Microelectron. Reliab. 42 1857
[17] Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Arvet C, Tabone C, Previtali B, Loup V, Roure M C, Pouydebasque A, Lafond D, Vinet M, Clavelier L, Faynot O 2010 International Symposium on VLSI-TSA Hsinchu, April 26-28, 2010 p40
[18] Qi R, Dai Y H, Chen J N, Li J S 2010 Manuf. Appl. Dev. 35 534 (in Chinese) [齐锐, 代月花, 陈军宁, 李俊生 2010 器件制造与应用 35 534]
[19] Steegen A, Stucchi M, Lauwers A, Maex K 1999 Electron Devices Meeting IEDM '99. Technical Digest Washington, USA, December 5-8, 1999 p497
[20] Fan M M, Xu J P, Liu L, Bai Y R 2014 J. Semicond. 35 044004
[21] Thomas C, Haldar S, Khanna M, Rajesh S, Gupta K K, Gupta R S 1998 Microelectron. Reliab. 38 1955
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