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Hot carrier gate current is one of the factors that influence the power and reliability of metal-oxide-semiconductor field effect transistor (MOSFET). Based on the physical process of generation of the hot carrier effect, a model of hot carrier gate current for uniaxially strained Si NMOSFET is developed. With that model, the simulation results of hot carrier gate current against stress intensity, gate-source bias, channel doping concentration, and drain-source bias are obtained and analyzed. The relationship between life time of time-dependent dielectric break down (TDDB) and gate-source bias is simulated and analyzed. Results show that the uniaxially strained Si MOSFET not only has smaller hot carrier gate current, but also has more stable reliability as compared with the strainless bulk device. Meanwhile, the simulation results match the experimental results very well, which validates the accuracy of the model.
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Keywords:
- uniaxially strained Si /
- gate current model /
- hot carrier
[1] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, L Y, Wang B, Li H C 2013 Acta Phys. Sin. 62 237103(in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨 2013 62 237103]
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[9] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302(in Chinese) [吴华英, 张鹤鸣, 宋建军, 胡辉勇 2011 60 097302]
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[12] Tam S, Ko P K, Hu C M 1984 IEEE Trans. on Electron Devices 31 1116
[13] El-Hennawy A, El-Said M H, Borel J, Kamarinos G 1987 Solid-Srate Electron 30 519
[14] Ning T H 1979 IEEE Trans. Electron Devices 26 4
[15] Weavera B D, Jackson E M, Summers G P 2000 J. Appl. Phys. 88 6951
[16] Toshifumi I, Toshinori N, Eiji T Norio H, Tsutomu T, Naoharu S, Shin-ichi T 2008 IEEE Trans. on Electron Devices 55 3159
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[1] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, L Y, Wang B, Li H C 2013 Acta Phys. Sin. 62 237103(in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨 2013 62 237103]
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Nicoleta W, Harald R, Mahadi-ul H 2011 Solid-State Electronics 57 60
[4] Olayiwola A, Sarah O, Anthony O’Neill 2010 Solid-State Electronics 54 634
[5] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Lv Y, Wang B, Wang G Y 2014 Acta Phys. Sin. 63 017101(in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 王冠宇 2014 63 017101]
[6] Kuang Q W, Liu H X, Wang S L, Qin S S, Wang Z L 2011 Chin. Phys. B 20 127101
[7] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li H C, Lv Y 2013 Acta Phys. Sin. 62 057103(in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057103]
[8] Ting-Kuo Kang 2012 IEEE Electron Device Letters 33 770
[9] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302(in Chinese) [吴华英, 张鹤鸣, 宋建军, 胡辉勇 2011 60 097302]
[10] Min B W, Zia O, Celik M, Widenhofer R, Kang L, Song S, Gonzales S, Mendicino M 2001 IEEE IEDM 01 873
[11] Liu H X, Zheng X F, Hao Y 2002 Acta Phys. Sin. 51 0163(in Chinese) [刘红侠, 郑雪峰, 郝跃 2002 51 0163]
[12] Tam S, Ko P K, Hu C M 1984 IEEE Trans. on Electron Devices 31 1116
[13] El-Hennawy A, El-Said M H, Borel J, Kamarinos G 1987 Solid-Srate Electron 30 519
[14] Ning T H 1979 IEEE Trans. Electron Devices 26 4
[15] Weavera B D, Jackson E M, Summers G P 2000 J. Appl. Phys. 88 6951
[16] Toshifumi I, Toshinori N, Eiji T Norio H, Tsutomu T, Naoharu S, Shin-ichi T 2008 IEEE Trans. on Electron Devices 55 3159
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