一种平行栅碳纳米管阵列阴极的场发射特性研究

雷达; 孟根其其格; 张荷亮; 智颖飙

doi:10.7498/aps.62.248502

摘要

建立一种平行栅碳纳米管阵列阴极，利用悬浮球模型和镜像电荷法进行计算，给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上，进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明，碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳，靠边缘部位的碳纳米管发射电子能力比其中心部位的大；除碳纳米管的长径比之外，栅极宽度和栅极间距也对电场增强因子有一定作用；接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流，而接触电阻高于800 kΩ时，器件对阳极驱动电压的要求更高.

关键词:

Abstract

One of the models for the carbon nanotube array with parallel grids is proposed. The actual electric field at the top of the carbon nanotubes and the field enhancement factor are calculated analytically with the image charge method and floated sphere model. The effects of the geometrical parameters of the device and the contact resistance on actual electric field, field enhancement factor at the top of carbon nanotubes, and the field emission current from the gated carbon nanotubes are investigated. The calculation results show that the carbon nanotube array has the best density for field emission when the intertube distance is twice the height of carbon nanotube. The actual electric field and the field emission current from gated carbon nanotube are greatly reduced by the contact resistance. When the contact resistance is larger than 800 kΩ, the emission current from carbon nanotube tends to be zero and the field emission properties are improved via modulating gate voltage.

Keywords:

carbon nanotube array with parallel grid /
floated sphere /
field enhancement factor /
contact resistance

作者及机构信息

1.
内蒙古大学鄂尔多斯学院, 鄂尔多斯 017000

基金项目: 国家自然科学基金（批准号：61261004）资助的课题.

Authors and contacts

1.
Ordos College of Inner Mongolia University, Ordos 017000, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61261004).

参考文献

[1]	Ijima S, Ichihashi T 1993 Nature 363 603
[2]	Milne W I, Teo K B K, Chhowalla M, Amaratunga G A J, Pribat D, Legagneux P, Pirio G, Vu T B, Semet V 2002 Curt. Appl. Phys. 2 509
[3]	Chen Q, Dai L 2001 J. Nanosci. Nanotech. 1 43
[4]	Xu X P, Brandes G R 1999 Appl. Phys. Lett. 74 2549
[5]	Lee Y H, Jang Y T, Kim D H, Ahn J H, Ju B 200l Adv. Mater. 13 479
[6]	Yuan X S, Zhang Y, Sun L M, Li X Y, Deng S Z, Xu N S, Yan Y 2012 Acta Phys. Sin. 61 216101 (in Chinese) [袁学松, 张宇, 孙利民, 黎晓云, 邓少芝,许宁生, 鄢扬 2012 61 216101]
[7]	Park J H, Son G H, Moon J S, Han J H, Berdinsky A S, Kuvshinov D G, Yoo J B, Park C Y 2005 J. Vac. Sci. Technol. B 23 749
[8]	Chen L F, Wang L, Yu X G, Zhang S J, Li D, Xu C 2013 Appl. Surf. Sci. 265 187
[9]	Ye Y, Xiao X J, Guo T L, Li W Z, Jiang Y D 2012 J. Functional Mater. 43 1221 (in Chinese) [叶芸, 肖晓晶, 郭太良, 李威志, 蒋亚东 2012 功能材料 43 1221]
[10]	Chung D S, Park S H, Lee H W, Choi J H, Cha S N, Kim J W, Jang J E, Min K W, Cho S H, Yoon M J, Lee J S, Lee C K, Yoo J H, Kim J M, Jung J E, Jin Y W, Park Y J, You J B 2002 Appl. Phys. Lett. 80 4045
[11]	Gao Y B, Zhang X B Lei W, Liu M, Zhang Y N, den Daniel E 2005 Appl. Surf. Sci. 243 19
[12]	Zhang Y A, Lin J Y, Wu C X, Zheng Y, Lin Z X, Guo T L 2011 J. Functional Mater. 42 1130 (in Chinese) [张永爱, 林金阳, 吴朝兴, 郑勇, 林志贤, 郭太良 2011 功能材料 42 1130]
[13]	Zhao X X, Zhang G M 2002 J. Vac. Sci. Technol. 22 358 (in Chinese) [赵晓雪, 张耿民 2002 真空科学与技术学报 22 358]
[14]	Nicolaescu D, Filip V, Kanemaru S, Itoh J 2003 J. Vac. Sci. Technol. B 21 366
[15]	Lei D, Wang W B, Zeng L Y, Liang J Q 2009 Acta Phys. Sin. 58 3384 (in Chinese) [雷达, 王维彪, 曾乐勇, 梁静秋 2009 58 3384]
[16]	Lei D, Zeng L Y, Xia Y X, Chen S, Liang J Q, Wang W B 2007 Acta Phys. Sin. 56 6616 (in Chinese) [雷达, 曾乐勇, 夏玉学, 陈松, 梁静秋, 王维彪 2007 56 6616]
[17]	Zhu Y B, Wang W L, Liao K J 2002 Acta Phys. Sin. 51 2336 (in Chinese) [朱亚波, 王万录, 廖克俊 2002 51 2336]
[18]	Dai J F, Mu X W, Qiao X W, Chen X X, Wang J H 2010 Chin. Phys. B 19 057201
[19]	Wang X Q, Li L, Chu N J, Jin H X, Ge H L 2008 Acta Phys. Sin. 57 7173 (in Chinese) [王新庆, 李良, 褚宁杰, 金红晓, 葛洪良 2008 57 7173]
[20]	Pan J Y, Zhang W Y, Gao Y L 2010 Acta Phys. Sin. 59 8763 (in Chinese) [潘金艳, 张文彦, 高云龙 2010 59 8763]
[21]	Fowler R H, Nordheim D L 2003 Proc. Roy. Soc. (London) A 119 173
[22]	Miller H C 1967 J. Appl. Phys. 38 1450
[23]	Wang X Q, Wang M, Li Z H, Xu Y B, He P M 2005 Ultramicroscopy 102 181
[24]	L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]
[25]	She J C, Xu N S, Deng S Z, Chen J, Bishpo H, Huq S E, Wang L, Zhong D Y, Wang E G 2003 Appl. Phys. Lett. 83 2671

施引文献

[1]	Ijima S, Ichihashi T 1993 Nature 363 603
[2]	Milne W I, Teo K B K, Chhowalla M, Amaratunga G A J, Pribat D, Legagneux P, Pirio G, Vu T B, Semet V 2002 Curt. Appl. Phys. 2 509
[3]	Chen Q, Dai L 2001 J. Nanosci. Nanotech. 1 43
[4]	Xu X P, Brandes G R 1999 Appl. Phys. Lett. 74 2549
[5]	Lee Y H, Jang Y T, Kim D H, Ahn J H, Ju B 200l Adv. Mater. 13 479
[6]	Yuan X S, Zhang Y, Sun L M, Li X Y, Deng S Z, Xu N S, Yan Y 2012 Acta Phys. Sin. 61 216101 (in Chinese) [袁学松, 张宇, 孙利民, 黎晓云, 邓少芝,许宁生, 鄢扬 2012 61 216101]
[7]	Park J H, Son G H, Moon J S, Han J H, Berdinsky A S, Kuvshinov D G, Yoo J B, Park C Y 2005 J. Vac. Sci. Technol. B 23 749
[8]	Chen L F, Wang L, Yu X G, Zhang S J, Li D, Xu C 2013 Appl. Surf. Sci. 265 187
[9]	Ye Y, Xiao X J, Guo T L, Li W Z, Jiang Y D 2012 J. Functional Mater. 43 1221 (in Chinese) [叶芸, 肖晓晶, 郭太良, 李威志, 蒋亚东 2012 功能材料 43 1221]
[10]	Chung D S, Park S H, Lee H W, Choi J H, Cha S N, Kim J W, Jang J E, Min K W, Cho S H, Yoon M J, Lee J S, Lee C K, Yoo J H, Kim J M, Jung J E, Jin Y W, Park Y J, You J B 2002 Appl. Phys. Lett. 80 4045
[11]	Gao Y B, Zhang X B Lei W, Liu M, Zhang Y N, den Daniel E 2005 Appl. Surf. Sci. 243 19
[12]	Zhang Y A, Lin J Y, Wu C X, Zheng Y, Lin Z X, Guo T L 2011 J. Functional Mater. 42 1130 (in Chinese) [张永爱, 林金阳, 吴朝兴, 郑勇, 林志贤, 郭太良 2011 功能材料 42 1130]
[13]	Zhao X X, Zhang G M 2002 J. Vac. Sci. Technol. 22 358 (in Chinese) [赵晓雪, 张耿民 2002 真空科学与技术学报 22 358]
[14]	Nicolaescu D, Filip V, Kanemaru S, Itoh J 2003 J. Vac. Sci. Technol. B 21 366
[15]	Lei D, Wang W B, Zeng L Y, Liang J Q 2009 Acta Phys. Sin. 58 3384 (in Chinese) [雷达, 王维彪, 曾乐勇, 梁静秋 2009 58 3384]
[16]	Lei D, Zeng L Y, Xia Y X, Chen S, Liang J Q, Wang W B 2007 Acta Phys. Sin. 56 6616 (in Chinese) [雷达, 曾乐勇, 夏玉学, 陈松, 梁静秋, 王维彪 2007 56 6616]
[17]	Zhu Y B, Wang W L, Liao K J 2002 Acta Phys. Sin. 51 2336 (in Chinese) [朱亚波, 王万录, 廖克俊 2002 51 2336]
[18]	Dai J F, Mu X W, Qiao X W, Chen X X, Wang J H 2010 Chin. Phys. B 19 057201
[19]	Wang X Q, Li L, Chu N J, Jin H X, Ge H L 2008 Acta Phys. Sin. 57 7173 (in Chinese) [王新庆, 李良, 褚宁杰, 金红晓, 葛洪良 2008 57 7173]
[20]	Pan J Y, Zhang W Y, Gao Y L 2010 Acta Phys. Sin. 59 8763 (in Chinese) [潘金艳, 张文彦, 高云龙 2010 59 8763]
[21]	Fowler R H, Nordheim D L 2003 Proc. Roy. Soc. (London) A 119 173
[22]	Miller H C 1967 J. Appl. Phys. 38 1450
[23]	Wang X Q, Wang M, Li Z H, Xu Y B, He P M 2005 Ultramicroscopy 102 181
[24]	L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]
[25]	She J C, Xu N S, Deng S Z, Chen J, Bishpo H, Huq S E, Wang L, Zhong D Y, Wang E G 2003 Appl. Phys. Lett. 83 2671

计量

文章访问数: 8496
PDF下载量: 794
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板