FeMn掺杂AlN薄膜的制备及其特性研究

蓝雷雷; 胡新宇; 顾广瑞; 姜丽娜; 吴宝嘉

doi:10.7498/aps.62.217504

摘要

采用直流磁控共溅射技术, 以Ar与N2为源气体, 硅片为衬底成功地制备了Fe, Mn掺杂AlN薄膜. 利用X射线衍射和拉曼光谱研究了工作电流、靶基距离等工艺参数的改变对薄膜结构的影响. 利用扫描电子显微镜和能谱分析仪对薄膜的表面形貌和组成成分进行了分析. 利用振动样品磁强计在室温下对Fe, Mn掺杂AlN薄膜进行了磁性表征. Mn掺杂AlN薄膜表现出顺磁性的原因可能是由于Mn掺杂浓度较高, 在沉积过程部分Mn以团簇的形式存在, 反铁磁性的Mn团簇减弱了体系的铁磁交换作用. Fe掺杂AlN薄膜表现出室温铁磁性, 这可能是AlFeN三元化合物作用的结果. 随着Fe 掺杂AlN薄膜中Fe原子浓度从6.81%增加到16.17%, 其饱和磁化强度Ms由0.27 emu·cm-3逐渐下降到0.20 emu·cm-3, 而矫顽力Hc则由57 Oe增大到115 Oe (1 Oe=79.5775 A/m), 这一现象与Fe离子间距离的缩短及反铁磁耦合作用增强有关.

关键词:

Abstract

Fe- and Mn-doped AlN thin films were prepared on Si substrates by direct current (DC) magnetron co-sputtering method in the atmospher of Ar and N2 mixture. The influences of sputtering currents and the target to substrate distance on the structure of the films were investigated by X-ray diffraction and Raman spectroscopy, respectively. Surface morphology and composition were studied by scanning electron microscope (SEM) with an energy dispersive X-ray spectroscopy (EDS) attachment. The magnetism of Mn- and Fe-doped AlN films was measured by vibrating sample magnetometer (VSM) at room temperature (RT). Processing of the Mn-doped AlN films produces Mn clusters in the samples. Due to the presence of the antiferromagnetism Mn clusters, ferromagnetism is either suppressed or disappears. The Fe-doped AlN films show ferromagnetism at RT, which should arise from the AlFeN ternary alloy. With the increase of the Fe target sputtering current, the Fe concentration is increased from 6.81 at.% to 16.17at.%; the saturation magnetization Ms is reduced from 0.27 emu·cm-3 to 0.20 emu·cm-3, and the coercive force Hc is increased from 57 Oe to 115 Oe, this is because the separation of Fe ions get shorter and the antiferromagnetic coupling is enhanced.

Keywords:

作者及机构信息

1.
延边大学理学院物理系, 延吉 133002;

2.
吉林大学超硬材料国家重点实验室, 长春 130012

基金项目: 国家自然科学基金 (批准号: 51272224, 11164031)资助的课题.

Authors and contacts

1.
Department of Physics, College of Science, Yanbian University, Yanji 133002, China;

2.
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51272224, 11164031).

参考文献

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施引文献

[1]	Ohno H 1998 Science 281 951
[2]	Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H, Awschalom D D 1999 Nature 402 790
[3]	Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[4]	Prinz G A 1998 Science 282 1660
[5]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[6]	Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363
[7]	Beschoten B, Crowell P A, Malajovich I, Awschalom D D, Matsukura F, Shen A, Ohno H 1999 Phys. Rev. Lett. 83 3073
[8]	Weng W X, Yan W S, Sun Z H, Yao T, Guo Y X, Wang F, Wei S Q, Zhang G B, Xu P S 2008 Acta Phys. Sin. 57 5788 (in Chinese) [翁卫祥, 闫文盛, 孙治湖, 姚涛, 郭玉献, 王峰, 韦世强, 张国斌, 徐彭寿 2008 57 5788]
[9]	Liu Y Y, Liu F M, Shi X, Ding P, Zhou C C 2008 Acta Phys. Sin. 57 7274 (in Chinese) [刘妍妍, 刘发民, 石霞, 丁芃, 周传仓 2008 57 7274]
[10]	Kuang A L, Liu X C, Lu Z L, Ren S K, Liu C Y, Zhang F M, Du Y W 2005 Acta Phys. Sin. 54 2934 (in Chinese) [匡安龙, 刘兴翀, 路忠林, 任尚坤, 刘存业, 张凤鸣, 都有为 2005 54 2934]
[11]	Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 Chin. Phys. B 17 1371
[12]	Ran C J, Yang H L, Wang Y K, Hassan F M, Zhou L G, Xu X G, Jiang Y 2013 Chin. Phys. B 22 067503
[13]	Dong S, Zhu F 2012 Chin. Phys. B 21 097502
[14]	Hasegawa F, Takahashi T, Kubo K, Nannichi Y 1987 Jpn. J. Appl. Phys. 26 1555
[15]	Sardar K, Rao C N R 2005 Solid State Sciences 7 217
[16]	Gao X Q, Guo Z Y, Cao D X, Zhang Y F, Sun H Q, Deng B 2010 Acta Phys. Sin. 59 3418 (in Chinese) [高小奇, 郭志友, 曹东兴, 张宇飞, 孙慧卿, 邓贝 2010 59 3418]
[17]	Kim H W, Kebede M A, Kim H S 2009 Applied Surface Science 255 7221
[18]	Li H, Bao H Q, Song B, Wang W J, Chen X L 2008 Solid State Communications 148 406
[19]	Gu L, Wu S Y, Liu H X, Singh R K, Newman N, Smith D J 2005 J. Magn. Magn. Mater. 290 1395
[20]	Gao X D, Jiang E Y, Liu H H, Mi W B, Li Z Q, Wu P, Bai H L 2007 Applied Surface Science 253 5431
[21]	Gupta R K, Ghosh K, Kahol P K 2009 Applied Surface Science 255 8926
[22]	Chen D, Xu D, Wang J J, Zhao B, Zhang Y F 2008 Thin Solid Films 517 986
[23]	Luo M C, Wang X L, Li J M, Liu H X, Wang L, Sun D Z, Zeng Y P, Lin L Y 2002 Journal of Crystal Growth 244 229
[24]	Lughi V, Clarke D R 2006 Appl. Phys. Lett. 89 241911
[25]	Kuball M, Hayes J M, Prins A D, Uden N W A, Dunstan D J, Shi Y, Edgar J H 2001 Appl. Phys. Lett. 78 724
[26]	Perlin P, Polian A, Suski T 1993 Phys. Rev. B 47 2874
[27]	Singhal R K, Dhawan M, Kumar S, Dolia S N, Xing Y T, Saitovitch E 2009 Physica B 404 3275
[28]	Ham M H, Yoon S, Park Y, Myoung J M 2004 Journal of Crystal Growth 271 420
[29]	Song Y Y, Quang P H, Pham V T, Lee K W, Yu S C 2005 J. Magn. Magn. Mater. 290 1375
[30]	Sharma P, Gupta A, Rao K V, Owens F J, Sharma R, Ahuja R, Guillen J M, Johansson B, Gehring G A 2003 Nature Materials 2 673
[31]	Li X D, Wang X Y, Jiang X Q, Du Y C 1994 Vacuum Deposition Technology (Hangzhou: Zhejiang University Press) p109 (in Chinese) [李学丹, 万学英, 姜祥祺, 杜元成 1994 真空沉积技术 (杭州: 浙江大学出版社) 第109页]
[32]	Chen M, Bai X D, Huang R F, Wen L S 2000 Chinese Journal of Semiconductors 21 394 (in Chinese) [陈猛, 白雪冬, 黄荣芳, 闻立时 2000 半导体学报 21 394]
[33]	Liu H Y, Zeng F, Tang G S, Pan F 2013 Applied Surface Science 270 225
[34]	Park W K, Ortega-Hertogs R J, Moodera J S, Punnoose A, Seehra M S 2002 J. Appl. Phys. 91 8093
[35]	Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988

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