生长条件对脉冲激光沉积制备ZnO：Al薄膜光电性能的影响

韩军; 张鹏; 巩海波; 杨晓朋; 邱智文; 自敏; 曹丙强

doi:10.7498/aps.62.216102

摘要

本文研究了脉冲激光沉积(PLD)生长过程中, 铝掺量、氧压及衬底温度等实验参数对ZnO:Al(AZO)薄膜生长的影响, 并利用扫描电子显微镜、原子力显微镜、X射线衍射、霍尔效应、光透射光谱等实验手段对其透明导电性能进行了探讨. 变温霍尔效应和光透射测量表明, 当靶材中铝掺量大于0.5 wt%时, 所制备AZO薄膜中铝施主在80 K时已完全电离, 因Bernstein-Moss (BM) 效应其带隙变大, 均为重掺杂简并半导体. 进一步系统研究了氧压和衬底温度对AZO薄膜透明导电性能的影响, 实验发现当氧压为1 Pa, 衬底温度为200 ℃时, AZO 导电性能最好, 其霍尔迁移率为28.8 cm2/V·s, 薄膜电阻率最小可达2.7×10-4 Ω·cm, 且在可见光范围内光透过率超过了85%. 氧压和温度的增加, 都会导致薄膜电阻率变大.

关键词:

Abstract

The influences of aluminum doping, oxygen pressure, and substrate temperature on the transparent conductive properties of ZnO:Al (AZO) films grown by pulsed laser deposition (PLD) were investigated using scanning electron microscope, atomic force microscope, X-ray diffraction, Hall effect measurements, and optical transmission spectrum. When the aluminum doping concentration is over 0.5 wt%, all the PLD grown AZO films are degenerated and the aluminum donors are thermal ionized even at a low temperature of 80 K. As a result, the bandgap of AZO film shows blue shifts due to the Bernstein-Moss effect as further confirmed by optical transmission spectrum. The influences of the oxygen pressure and substrate temperature on the transparent conductive property of AZO films were further studied. When the oxygen pressure is 1 Pa and the substrate temperature is 200 ℃, the best conductivity property of AZO thin film is obtained with Hall mobility of 28.8 cm2/V·s and film resistivity of 2.7×10-4 Ω·cm. Moreover, the light transmittance in the visible range exceeds 85%. However, as the oxygen pressure and temperature continue to increase, the film resistivity will increase.

Keywords:

作者及机构信息

1.
济南大学材料科学与工程学院, 山东省高校无机功能材料重点实验室, 济南 250022

基金项目: 国家自然科学基金 (批准号: 11174112, 51002065)、山东省泰山学者基金 (批准号: TSHW20091007)、教育部新世纪优秀人才支持计划 (批准号: NCET-11-1027)和山东省杰出青年基金资助(批准号: JQ201214)资助的课题.

Authors and contacts

1.
Key Lab of Inorganic Functional Material in Universities of Shandong, School of Material Science and Engineering, University of Jinan, Jinan 250022, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174112, 51002065), the Taishan Scholar Professorship tenured at University of Jinan, China (Grant No. TSHW20091007), The Program for New Century Excellent Talents in University of China (Grant No. NCET-11-1027), and the Shandong Provincial Science Foundation for Disguised Youth Scholars, China (Grant No. JQ201214).

参考文献

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[31]	Chang J F, Hon M H 2001 Thin Solid Films 386 79

施引文献

[1]	Granqvist G C 2007 Sol. Energy Mater. Sol. Cells 91 1529
[2]	Fortunato E, Ginley D, Hosono H, Paine C D 2007 MRS Bull. 32 242
[3]	Lewis B G, Paine D C 2000 MRS Bull. 25 22
[4]	Minami T 2008 Thin Solid Films 516 5822
[5]	Cao L,Zhun L P, Jiang J, Zhao R, Ye Z Z, Zhao B H 2011 Sol. Energy Mater. Sol. Cells 5 894
[6]	Gondoni P, Ghidell M, Fonzo F D, Russo V, Bruno P, Martí-Rujas J, Bottani E C, Bassi L A, Casari S C 2012 Thin Solid Films 520 4707
[7]	Chen Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q, Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese) [陈兆权, 刘明海, 刘玉萍, 陈伟, 罗志清, 胡希伟 2009 58 4260]
[8]	Ellmer K 2001 J. Phys. D 34 3097
[9]	Bao S Y, Dong W J, Xu X, Luan T B, Li J, Zhang Q Y 2011 Acta Phys. Sin. 60 036804 (in Chinese) [鲍善永, 董武军, 徐兴, 栾田宝, 李杰, 张庆瑜 2011 60 036804]
[10]	Yano M, Ogata K,Yan F P, Koki K, Sasa S, Inoue M 2003 Mater. Res. Soc. Symp. Proc. 744 M3.1.1
[11]	Agura H, Suzuki A, Matsushita T, Aoki T, Masahiro, Okuda M 2003 Thin Solid Films 445 263
[12]	Agashe C, KluthO, Hupkes J, Zastrow U, Rech B, Wuttig M 2004 J. Appl. Phys. 95 1911
[13]	Mridha S, Basakk D 2007 J. Phys. D Appl. Phys. 40 6902
[14]	Chen C, Ji Y, Gao X Y, Zhao M K, Ma J M, Zhang Z Y, Lu J X 2012 Acta Phys. Sin. 61 036104 (in Chinese) [陈超, 冀勇, 郜小勇, 赵孟珂, 马姣民, 张增院, 卢景霄 2012 61 036104]
[15]	Li L N, Chen X L, Wang F, Sun J, Zhang D K, Geng X H, Zhao Y 2011 Acta Phys. Sin. 60 067304 (in Chinese) [李林娜, 陈新亮, 王斐, 孙建, 张德坤, 耿新华, 赵颖 2012 60 067304]
[16]	Chen D, L J G, Huang J Y, Jin Y Z, Zhang H X, Ye Z Z 2013 J. Inorg. Mater. 28 649 (in Chinese) [陈丹, 吕建国, 黄靖云, 金豫浙,张昊翔, 叶志镇 2013 无机材料学报 28 649]
[17]	Wang G H, Zhao L, Yan B J, Chen J W, Wang G, Diao H W, Wang W J 2013 Chin. Phys. B 22 068102
[18]	Zhang C, Chen X L, Wang F, Yan C B, Huang Q, ZhaoY, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese) [张翅, 陈新亮, 王斐, 闰聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 61 238101]
[19]	Li Y, Tompa G S, Liang S, Gorla C, Lu Y, Doyle J 1997 J. Vac. Sci. Technol. A 15 1063
[20]	Singh V A, Mehra M R, Buthrath N, Wakahara A, Yoshida A 2001 J. Appl. Phys. 90 5661
[21]	Park S M, Kegami T I, Ebihara K 2005 Jpn. J. Appl. Phys. 44 8027
[22]	Gondoni P,Ghidelli M, Russo V, Bruno P, Martí-Rujas J, Bottani C E, Bassi A L, Casari S C 2012 Thin Solid Films 520 4707
[23]	Yoon M H, Lee S H, Park H L, Kim H K, Jang M S 2002 J. Mater. Sci. Lett. 21 1703
[24]	Ayadi Z B, Mir L E, Djessas K, Alaya S 2008 Mater. Sci. Eng. C 28 613
[25]	Lu J G, Ye Z Z, Zeng Y J, Zhu L P, Wang L, Yuan J, Zhao B H 2006 J. Appl. Phys. 100 073714
[26]	Yoshioka S, Oba F, Huang R, Tanaka I, Mizoguchi T, Yamamoto T 2008 J. Appl. Phys. 103 014309
[27]	Gu X Q, Zhu L P, Cao L, Ye Z Z, He H P, Chu P K 2011 Mater. Sci. Semicon. Proc. 14 48
[28]	Chen M, Pei Z L, Wang X, Sun C, Wen L S 2001 J. Vac. Sci. Technol. A 19 963
[29]	Pankove I J 1971 Optical Processes in Semiconductors(New Jersey: Prentice-Hall) pp34–76
[30]	Guillen C, Herrero J 2010 Vacuum 84 924
[31]	Chang J F, Hon M H 2001 Thin Solid Films 386 79

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