钽掺杂二氧化钛薄膜的光电性能研究

薛将; 潘风明; 裴煜

doi:10.7498/aps.62.158103

摘要

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO2薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)1/2呈正比关系.

关键词:

Abstract

Tantalum-doped TiO2 thin films were deposited on glass substrates by pulsed laser deposition (PLD). Their optoelectrical properties were studied. The optical band gap was found varying between 3.26 and 3.49 eV when the oxygen partial pressure increases from 0.3 to 0.7 Pa. The dependence of electrical property of the films on temperature was measured to identify the dominant conduction mechanism. It was found that thermally activated band conduction was the dominant conduction mechanism in the temperatures range of 150 to 210 K. Whereas, in the temperature region of 10 to 150 K, the dependence of the conductivity on temperature followed Mott’s variable range hopping (VRH) model. Moreover, the temperature dependence of resistivity for the films can be described by～ exp(b/T)1/2 at temperatures from 210 to 300 K.

Keywords:

作者及机构信息

1.
南京航空航天大学应用物理系, 南京 211100

基金项目: 国家自然科学基金 (批准号:51032002) 和国家高技术研究发展计划项目 (批准号:2011AA050526) 资助的课题.

Authors and contacts

1.
Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211100, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51032002), and the National High Technology Research and Development Program of China (Grant No. 2011AA050526).

参考文献

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施引文献

[1]	Maness P Smolinski S, Blake D, Huang Z, Wolfrum E, Jacoby W 1999 Appl. Environ. Microb. 65 4094
[2]	Wu J, Lv X, Zhang L, Xia Y, Huang F, Xu F 2009 J. Alloys Compd. 496 1
[3]	Regan B O, Gratzel M 1991 Nature 353 737
[4]	Hu L H, Dai S Y, Wang K J 2005 Acta Phys Sin 54 1914 (in Chinese) [胡林华, 戴松元, 王孔嘉 2005 54 1914]
[5]	Danion A, Disdier J, Guillard C, Abdelmalek F, Jaffrezic Renault N 2004 Appl. Catal. B: Environ. 52 213
[6]	Esquivel K, Arriaga L, Rodriguez F, Martinez L, Godinez L 2009 Water Res. 43 3593
[7]	Moon J, Park J, Lee S, Zyung T, Kim I 2010 Sens. Actuators B: Chem. 149 301
[8]	Asahi R, Taga Y,Mannstadt W, Freeman A J 2000 Phys. Rev. B 61 7459
[9]	Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 2042
[10]	Liu X D, Jiang E Y, Li Z Q, Song Q G 2008 Appl. Phys. Lett. 92 252104
[11]	Furubayashi Y, Hitosugi T, Yamamoto Y, Inaba K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101
[12]	Zhang S X, Kundaliya D C, Yu W, Dhar S, Young S Y, Riba L G S, Ogale S B, Vispute R D, Venkatesan T 2007 J. Appl. Phys. 102 013701
[13]	Zhang R S, Liu Y, Teng F 2012 Acta Phys. Sin. 61 392 (in Chinese) [章瑞铄, 刘涌, 滕繁 2012 61 392]
[14]	Luo X D, Di G Q 2012 Acta Phys. Sin. 61 391 (in Chinese) [罗晓东, 狄国庆 2012 61 391]
[15]	Hitosugi T, Furubayashi Y, Ueda A, Itabashi K, Inaba K, Hirose Y, Kinoda G, Yamamoto Y, Shimada T, Hasegawa T 2005 Jpn. J. Appl. Phys. 44 L1063
[16]	Gupta R K, Ghosh K, Mishra S R, Kahol P K 2008 Appl. Surf. Sci. 254 4018
[17]	Yamada N, Hitosugi T, Hoang N L H, Furubayashi Y, Hirose Y, Shimada T, Hasegawa T 2007 Jpn. J. Appl. Phys. 46 5275
[18]	Yamada N, Hitosugi T, Hoang N L H, Furubayashi Y, Hirose Y, Konuma S, Shimada T, Hasegawa T 2008 Thin Solid Films 516 5754
[19]	Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Exp. 1 111203
[20]	Patra A, Friend C S, Kapoor R, Prasad P N 2003 Chem. Mater. 15 3650
[21]	Lee W E, Fang Y K, Ho J J, Chen C Y, Chiou L H, Wang S J, Dai F, Heieh T, Tsai R Y, Huang D, Ho F C 2002 Solid State Electron 46 477
[22]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[23]	Miao W, Li X, Zhang Q, Huang L, Zhang Z, Zhang L, Yan X 2006 Thin Solid Films 500 70
[24]	Daude N, Gout C, Jouanin C 1977 Phys. Rev. B 15 3229
[25]	Park S M, Ikegami T, Ebihara K, Shin P K 2006 Appl. Surf. Sci. 253 1522
[26]	Yasuhiro I, Hirokazu K 2001 Appl. Surf. Sci. 169 508
[27]	Zhang S X, Dhar S, Yu W, Xu H, Ogale S B, Venkatesan T 2007 Appl. Phys. L 91 112
[28]	Yong T K, Tou T Y, Teo B S 2005 Appl. Surf. Sci. 248 388
[29]	Sheng P, Abeles B, Arie Y 1973 Phys. Rev. Lett. 31 44
[30]	Efros A L, Shklovskii B I 1975 J. Phys. C 8 L49
[31]	Mott N F, Davis E A 1979 Calendon Press Oxford
[32]	Yildiz A, Lisesivdin S B, Kasap M, Mardare D 2009 Physica B 404 1423
[33]	Mott N F 1968 J. Non-Cryst. Solids 1 1

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