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Tensile-strained germanium is one of the promsing materials for Si-based photonic devices due to its quasi-direct band and compatiblility with silicon technology. The band structure of tensile-strained germanium is investigated based on the theory of van de Walle deformed potential. The carrier distributions in the conduction bands at Γ and L vallies under the strain, and the n-type doping concentratoin in germanium are analyzed. Considering the competition between radiative recombinations at Γ and L vallies and Auger recombination, as well as dislocation induced non-radiative recombination, internal quantum efficiency and optical gain for direct band transition in n-type Ge are calculated. It is shown that 74.6% internal quantum efficiency can be obtained in the 1.5% tensile-strained n-type doped Ge under carrier injection and a strong optical gain is predicted, which is comparable to those of III-V materials.
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Keywords:
- strain /
- n-type doped germanium /
- internal quantum efficiency /
- optical gain
[1] Cheng S L, Lu J, Shambat G, Yu H Y, Saraswat K, Vuckovic J, Nishi Y 2009 Opt. Express 17 10019
[2] Hu W X, Cheng B W, Xue C L, Xue H Y, Su S J, Bai A Q, Luo LP, Yu Y D, Wang Q M 2009 Appl. Phys. Lett. 95
[3] Liu J, Sun X, Pan D, Wang X, Kimerling L C, Koch T L, Michel J2007 Opt. Express 15 11272
[4] Liu J F, Sun X C, Camacho-Aguilera R, Kimerling L C, Michel J2010 Opt Lett 35 679
[5] Sun X C, Liu J F, Kimerling L C, Michel J 2009 Appl. Phys. Lett.95
[6] Huang W Q, Liu S R 2005 Acta Phys. Sin. 54 0972 (in Chinese) [黄伟其, 刘世荣 2005 54 0972 ]
[7] Ma S Y, Qin G G, You L P, Wang Y Y 2001 Acta Phys. Sin. 501580 (in Chinese) [马书懿, 秦国刚, 尤力平, 王印月 2001 50 1580 ]
[8] Huo Y, Lin H, Chen R, Makarova M, Rong Y, Li M, Kamins T I, Vuckovic J, Harris J S 2011 Appl. Phys. Lett. 98 011111
[9] Van de Walle C G 1989 Phys. Rev. B Condens Matter 39 1871
[10] Van deWalle C G, Martin RM1986 Phys. Rev. B Condens Matter34 5621
[11] Ishikawa Y, Wada K, Liu J, Cannon D D, Luan H C, Michel J, Kimerling L C 2005 J. Appl. Phys. 98 013501
[12] El Kurdi M, Kociniewski T, Ngo T P, Boulmer J, Debarre D, BoucaudP, Damlencourt J F, Kermarrec O, Bensahel D 2009 Appl.Phys. Lett. 94
[13] Van Roosbroeck W, Shockley W 1954 Phys. Rev. 94 1558
[14] Shen Y, Mueller G, Watanabe S, Gardner N, Munkholm A, Krames M 2007 Appl. Phys. Lett. 91 141101
[15] Karpov S Y, Makarov Y N 2002 Appl. Phys. Lett. 81 4721
[16] Wertheim G, Pearson G 1957 Phys. Rev. 107 694
[17] Spitzer W G, Trumbore F, Logan R 1961 J. Appl. Phys. 32 1822
[18] Newman R, Tyler W 1957 Phys. Rev. 105 885
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[1] Cheng S L, Lu J, Shambat G, Yu H Y, Saraswat K, Vuckovic J, Nishi Y 2009 Opt. Express 17 10019
[2] Hu W X, Cheng B W, Xue C L, Xue H Y, Su S J, Bai A Q, Luo LP, Yu Y D, Wang Q M 2009 Appl. Phys. Lett. 95
[3] Liu J, Sun X, Pan D, Wang X, Kimerling L C, Koch T L, Michel J2007 Opt. Express 15 11272
[4] Liu J F, Sun X C, Camacho-Aguilera R, Kimerling L C, Michel J2010 Opt Lett 35 679
[5] Sun X C, Liu J F, Kimerling L C, Michel J 2009 Appl. Phys. Lett.95
[6] Huang W Q, Liu S R 2005 Acta Phys. Sin. 54 0972 (in Chinese) [黄伟其, 刘世荣 2005 54 0972 ]
[7] Ma S Y, Qin G G, You L P, Wang Y Y 2001 Acta Phys. Sin. 501580 (in Chinese) [马书懿, 秦国刚, 尤力平, 王印月 2001 50 1580 ]
[8] Huo Y, Lin H, Chen R, Makarova M, Rong Y, Li M, Kamins T I, Vuckovic J, Harris J S 2011 Appl. Phys. Lett. 98 011111
[9] Van de Walle C G 1989 Phys. Rev. B Condens Matter 39 1871
[10] Van deWalle C G, Martin RM1986 Phys. Rev. B Condens Matter34 5621
[11] Ishikawa Y, Wada K, Liu J, Cannon D D, Luan H C, Michel J, Kimerling L C 2005 J. Appl. Phys. 98 013501
[12] El Kurdi M, Kociniewski T, Ngo T P, Boulmer J, Debarre D, BoucaudP, Damlencourt J F, Kermarrec O, Bensahel D 2009 Appl.Phys. Lett. 94
[13] Van Roosbroeck W, Shockley W 1954 Phys. Rev. 94 1558
[14] Shen Y, Mueller G, Watanabe S, Gardner N, Munkholm A, Krames M 2007 Appl. Phys. Lett. 91 141101
[15] Karpov S Y, Makarov Y N 2002 Appl. Phys. Lett. 81 4721
[16] Wertheim G, Pearson G 1957 Phys. Rev. 107 694
[17] Spitzer W G, Trumbore F, Logan R 1961 J. Appl. Phys. 32 1822
[18] Newman R, Tyler W 1957 Phys. Rev. 105 885
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