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The organic light emitting diode with inserted LiF layer has been fabricated. Tris-(8-hydroxyquinoline) aluminum (Alq3) was used as electron-transport layer and N, N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB) was used as hole-transport layer. By changing the thickness of LiF deposited between Alq3 and NPB, the optoelectrical properties and the magnetic field effect on electroluminescence were studied at different temperatures. The measurement results show that using LiF layer enables the transport of carrier and the formation of excited states inside the device. A thick LiF layer blocks the transport of holes, lowering the efficiency of the device. However, use of LiF layer can effectively tune the magnetic field effect of electroluminescence. Compared with conventional devices, the magnetic field effect of device with inserted LiF layer was strengthened within low-field range (the magnetic induction BB≥40 mT) decrease of electroluminescence, and the thicker the LiF layer, the smaller the magnitude of decrease. These observations indicate that the concentration of the triplet excitons offects the high magnetic field decrease of electroluminescence at low temperatures.
[1] ［1］Tang C W, Van Slyke S A 1987 Appl. Phys. Lett. 51 913
[2] ［2］Zhang X L, Yang S Y, Lou Z D, Hou Y B 2007 Acta Phys. Sin. 56 1632 (in Chinese) ［张秀龙、杨盛谊、娄志东、侯延冰 2007 56 1632］
[3] ［3］Qian L, Teng F, Xu Z, Quan S Y, Liu D A, Wang Y M, Wang Y S, Xu X R 2006 Acta Phys. Sin. 55 929 (in Chinese) ［钱磊、滕枫、徐征、权善玉、刘德昂、王元敏、王永生、徐叙瑢 2006 55 929］
[4] ［4］Mermer O, Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid State Commun 134 631
[5] ［5］Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[6] ［6］Wang Z, He Z H, Tan X W, Tao M L, Li G Q, Xiong Z H 2007 Acta Phys. Sin. 56 2979 (in Chinese) ［王振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979］
[7] ［7］Uddin A, Lee C B, Hu X, Wong T K S 2006 J. Cryst. Growth 288 115
[8] ［8］Xu X M, Peng J C, Li H J, Qu S, Zhao C J, Luo X H 2004 Acta Phys. Sin. 53 286 (in Chinese) ［许雪梅、彭景翠、李宏建、瞿述、赵楚军、罗小华 2004 53 286］
[9] ［9］Zhang L J, Hua Y L, Wu X M, Wang Y, Yin S G 2008 Chin. Phys. B 17 3097
[10] ］Du P, Zhang X Q, Sun X B, Yao Z G, Wang Y S 2006 Chin. Phys. B 15 1370
[11] ］Zhu W Q, Jiang X Y, Zhang Z L, Sun R G, Xu S H 2004 J. Funct. Mater. 35 272 ［朱文清、蒋雪茵、张志林、孙润光、许少鸿 2004 功能材料35 272］
[12] ］Zhu W Q, Jiang X Y, Zhang Z L, Sun R G, Xu S H 2004 J. Funct. Mater. 35 276 ［朱文清、蒋雪茵、张志林、孙润光、许少鸿 2004 功能材料35 276］
[13] ］Ihm K, Kang T H, Kim K J, Hwang C C, Park Y J 2003 Appl. Phys. Lett. 83 2949
[14] ］Zhao Y, Liu S Y, Hou J Y 2001 Thin Solid Films 397 208
[15] ］Zhu F R, Low B, Zhang K R, Chua S J2001 Appl. Phys. Lett. 79 1205
[16] ］Kim Y M, Lee J W, Jung J H, Paek K K , Sung M Y, Kim J K, Ju B K 2006 IEEE Electron Dev. Lett. 27 558
[17] ］Liu D, Teng F, Xu Z, Yang S Y, Qian L, He Q F, Wang Y S, Xu X R 2007 J. Lumin. 122—123 656
[18] ］Han K, Yi Y, Song W J, Cho S W, Jeon P E, Lee H, Whang C N, Jeong K 2008 Org. Electron. 9 30
[19] ］Lian J R, Yuan Y B, Zhou X 2007 Chin. Phys. Lett. 24 828
[20] ］Odaka H, Okamoto H, Kawasaki M, Tokura Y 2006 Appl. Phys. Lett. 88 123501
[21] ］Liu R, Zhang Y, Lei Y L, Chen P, Xiong Z H 2009 J. Appl. Phys. 105 093719
[22] ］Zhang Y, Liu R, Lei Y L, Xiong Z H 2009 Appl. Phys. Lett. 94 083307
[23] ］Ito F, Ikoma T, Akiyama K 2005 J. Phys. Chem. 109 929
[24] ］Ganzorg C, Fujihira M 2002 Appl. Phys. Lett. 81 3137
[25] ］Merrifield R E 1968 J. Chem. Phys. 48 4318
[26] ］Hu B, Wu Y 2007 Nat. Mater. 6 985
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[1] ［1］Tang C W, Van Slyke S A 1987 Appl. Phys. Lett. 51 913
[2] ［2］Zhang X L, Yang S Y, Lou Z D, Hou Y B 2007 Acta Phys. Sin. 56 1632 (in Chinese) ［张秀龙、杨盛谊、娄志东、侯延冰 2007 56 1632］
[3] ［3］Qian L, Teng F, Xu Z, Quan S Y, Liu D A, Wang Y M, Wang Y S, Xu X R 2006 Acta Phys. Sin. 55 929 (in Chinese) ［钱磊、滕枫、徐征、权善玉、刘德昂、王元敏、王永生、徐叙瑢 2006 55 929］
[4] ［4］Mermer O, Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid State Commun 134 631
[5] ［5］Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[6] ［6］Wang Z, He Z H, Tan X W, Tao M L, Li G Q, Xiong Z H 2007 Acta Phys. Sin. 56 2979 (in Chinese) ［王振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979］
[7] ［7］Uddin A, Lee C B, Hu X, Wong T K S 2006 J. Cryst. Growth 288 115
[8] ［8］Xu X M, Peng J C, Li H J, Qu S, Zhao C J, Luo X H 2004 Acta Phys. Sin. 53 286 (in Chinese) ［许雪梅、彭景翠、李宏建、瞿述、赵楚军、罗小华 2004 53 286］
[9] ［9］Zhang L J, Hua Y L, Wu X M, Wang Y, Yin S G 2008 Chin. Phys. B 17 3097
[10] ］Du P, Zhang X Q, Sun X B, Yao Z G, Wang Y S 2006 Chin. Phys. B 15 1370
[11] ］Zhu W Q, Jiang X Y, Zhang Z L, Sun R G, Xu S H 2004 J. Funct. Mater. 35 272 ［朱文清、蒋雪茵、张志林、孙润光、许少鸿 2004 功能材料35 272］
[12] ］Zhu W Q, Jiang X Y, Zhang Z L, Sun R G, Xu S H 2004 J. Funct. Mater. 35 276 ［朱文清、蒋雪茵、张志林、孙润光、许少鸿 2004 功能材料35 276］
[13] ］Ihm K, Kang T H, Kim K J, Hwang C C, Park Y J 2003 Appl. Phys. Lett. 83 2949
[14] ］Zhao Y, Liu S Y, Hou J Y 2001 Thin Solid Films 397 208
[15] ］Zhu F R, Low B, Zhang K R, Chua S J2001 Appl. Phys. Lett. 79 1205
[16] ］Kim Y M, Lee J W, Jung J H, Paek K K , Sung M Y, Kim J K, Ju B K 2006 IEEE Electron Dev. Lett. 27 558
[17] ］Liu D, Teng F, Xu Z, Yang S Y, Qian L, He Q F, Wang Y S, Xu X R 2007 J. Lumin. 122—123 656
[18] ］Han K, Yi Y, Song W J, Cho S W, Jeon P E, Lee H, Whang C N, Jeong K 2008 Org. Electron. 9 30
[19] ］Lian J R, Yuan Y B, Zhou X 2007 Chin. Phys. Lett. 24 828
[20] ］Odaka H, Okamoto H, Kawasaki M, Tokura Y 2006 Appl. Phys. Lett. 88 123501
[21] ］Liu R, Zhang Y, Lei Y L, Chen P, Xiong Z H 2009 J. Appl. Phys. 105 093719
[22] ］Zhang Y, Liu R, Lei Y L, Xiong Z H 2009 Appl. Phys. Lett. 94 083307
[23] ］Ito F, Ikoma T, Akiyama K 2005 J. Phys. Chem. 109 929
[24] ］Ganzorg C, Fujihira M 2002 Appl. Phys. Lett. 81 3137
[25] ］Merrifield R E 1968 J. Chem. Phys. 48 4318
[26] ］Hu B, Wu Y 2007 Nat. Mater. 6 985
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