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A surface-wave driven plasma antenna has been built. An exponential model of the surface current distribution has been proposed to calculate the radiation pattern of the plasma antenna. The results show that the plasma density decreases exponentially with the axial length. The magnitude of the imaginary part of the surface wave vector shows similar exponentially decaying profile with the plasma density under normal conditions, while the real part of the wave vector remains almost constant. The surface current distribution shows a traveling wave mode with exponentially decaying magnitude. The calculated radiation pattern of a typical “8” figure fits the experimental values well using the proposed surface current distribution model. The radiation pattern is broadened when the input RF power decreases.
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Keywords:
- plasma antenna /
- surface current distribution /
- radiation pattern
[1] ［1］Moisan M, Shivarova A, Trivelpiece A W 1982 Plasma Phys. 24 1331
[2] ［2］Zhao G W, Xu Y M, Chen C 2007 Acta Phys. Sin. 56 5298 （in Chinese）［赵国伟、徐跃民、陈诚 2007 56 5298］
[3] ［3］Liang Z W, Sun H L, Wang Z J, Xu J, Xu Y M 2008 Acta Phys. Sin. 57 4292 （in Chinese）［梁志伟、孙海龙、王之江、徐杰、徐跃民 2008 57 4292］
[4] ［4］Ding Z F, Yuan G Y, Gao W, Sun J C 2008 Acta Phys. Sin. 57 4304 （in Chinese）［丁振锋、袁国玉、高巍、孙景超 2008 57 4304］
[5] ［5］Borg G G, Harris J H, Miljak D G, Martin N M 1999 Appl. Phys. Lett. 74 3272
[6] ［6］Rayner J P, Whichello A P, Cheetham A D 2004 IEEE Trans Plasma Sci. 32 269
[7] ［7］Borg G G, Harris J H, Martin N M 2000 Phys. Plasmas Lett. 27 2198
[8] ［8］Lee Y, Ganguly S 2005 Microwave and Optical Technology Letters 46 253
[9] ［9］Yang L L, Tu Y, Wang B P 2004 Vacuum Science and Technology 24 424 （in Chinese）［杨兰兰、屠彦、王保平 2004 真空科学与技术学报 24 424］
[10] ］Zhao G W, Xu Y M, Chen C 2006 Acta Phys. Sin. 55 3458 （in Chinese）［赵国伟、徐跃民、陈诚 2006 55 3458］
[11] ］Oksuz L, Soberon F, Ellingboe A R 2006 J. Appl. Phys. 99 013304
[12] ］Sudit I D, Chen F F 1994 Plasma Sources Sci. Technol. 3 162
[13] ］Hitchon W N G 1999 Plasma Processes for Semiconductor Fabrication （New York: Cambridge University Press）
[14] ］Moisan M, Zakrzewski Z 1991 J. Phys. D 24 1025
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[1] ［1］Moisan M, Shivarova A, Trivelpiece A W 1982 Plasma Phys. 24 1331
[2] ［2］Zhao G W, Xu Y M, Chen C 2007 Acta Phys. Sin. 56 5298 （in Chinese）［赵国伟、徐跃民、陈诚 2007 56 5298］
[3] ［3］Liang Z W, Sun H L, Wang Z J, Xu J, Xu Y M 2008 Acta Phys. Sin. 57 4292 （in Chinese）［梁志伟、孙海龙、王之江、徐杰、徐跃民 2008 57 4292］
[4] ［4］Ding Z F, Yuan G Y, Gao W, Sun J C 2008 Acta Phys. Sin. 57 4304 （in Chinese）［丁振锋、袁国玉、高巍、孙景超 2008 57 4304］
[5] ［5］Borg G G, Harris J H, Miljak D G, Martin N M 1999 Appl. Phys. Lett. 74 3272
[6] ［6］Rayner J P, Whichello A P, Cheetham A D 2004 IEEE Trans Plasma Sci. 32 269
[7] ［7］Borg G G, Harris J H, Martin N M 2000 Phys. Plasmas Lett. 27 2198
[8] ［8］Lee Y, Ganguly S 2005 Microwave and Optical Technology Letters 46 253
[9] ［9］Yang L L, Tu Y, Wang B P 2004 Vacuum Science and Technology 24 424 （in Chinese）［杨兰兰、屠彦、王保平 2004 真空科学与技术学报 24 424］
[10] ］Zhao G W, Xu Y M, Chen C 2006 Acta Phys. Sin. 55 3458 （in Chinese）［赵国伟、徐跃民、陈诚 2006 55 3458］
[11] ］Oksuz L, Soberon F, Ellingboe A R 2006 J. Appl. Phys. 99 013304
[12] ］Sudit I D, Chen F F 1994 Plasma Sources Sci. Technol. 3 162
[13] ］Hitchon W N G 1999 Plasma Processes for Semiconductor Fabrication （New York: Cambridge University Press）
[14] ］Moisan M, Zakrzewski Z 1991 J. Phys. D 24 1025
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