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高性能硅基太赫兹调制器是构建超宽带太赫兹-光纤混合通信系统的关键器件之一. 提出了一种基于钙钛矿/石墨烯/硅(MAPbI3/Graphene/Si)复合结构的近红外光驱动的超宽带大调制深度太赫兹调制器. 实验结果表明, 石墨烯薄膜和钙钛矿空穴传输层在近红外光驱动下可有效地促进界面电荷分离, 增大载流子复合寿命, 显著增强器件的表面电导率, 进一步调控太赫兹波的传输幅度, 实现光控型太赫兹波调制器的功能. 通过波长808 nm的近红外调制激励源, 对器件在0.2—2.5 THz超宽频率范围的太赫兹透射特性进行表征, 实验用6.1 mW/mm2的低功率密度近红外光驱动下实现了高达88.3%的大调制深度, 远高于裸硅基底的调制深度(约14.0%), 具有高灵敏、宽带和大调制深度等显著优势, 并且建立了相应的半解析器件模型, 仿真验证了实验结果. 所提出的MAPbI3/Graphene复合薄膜在增强硅基调制器性能方面效果显著, 为未来实现硅基太赫兹调制器在近红外太赫兹-光纤混合通信系统的集成提供了一种新策略.
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关键词:
- 太赫兹调制器 /
- MAPbI3/Graphene复合薄膜 /
- 近红外光驱动 /
- 高灵敏
A high-performance silicon-based terahertz modulator is one of the key devices for building an ultrawideband terahertz-fiber hybrid communication system. In this paper, an ultrawideband terahertz modulator with large modulation depth based on a chalcogenide/graphene/silicon (MAPbI3/Graphene/Si) composite structure driven by near-infrared light (NIR) is proposed. The experimental results show that the graphene thin film and the chalcogenide hole transport layer can effectively promote the interfacial charge separation, increase the carrier complex lifetime, significantly enhance the surface conductivity of the device, further modulate the terahertz wave transmission amplitude, and realize the function of the light-controlled terahertz wave modulator under the NIR light drive. The terahertz transmission characteristics of the device are characterized by an 808 nm NIR modulation excitation source, and a large modulation depth of up to 88.3% is achieved in an ultra-wide frequency range of 0.2–2.5 THz and a low power density of 6.1 mW/mm2 driven by NIR light, which is much higher than that of the bare silicon substrate (14.0%), with the significant advantages of high sensitivity, broadband, and large modulation depth. The corresponding semi-analytical device model is established and the experimental results are verified by simulation. The proposed MAPbI3/Graphene composite thin film is effective in enhancing the silicon-based modulator performance and provides a new strategy for the future integration of silicon-based terahertz modulators in NIR terahertz-fiber hybrid communication systems.-
Keywords:
- terahertz modulator /
- MAPbI3/Graphene composite thin film /
- near-infrared optical drive /
- high sensitivity
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图 1 (a) MAPbI3/Graphene基调制器结构示意图, 左侧为三维示意图, 右侧为侧视图; (b)硅基底上MAPbI3/Graphene复合薄膜的SEM表征图, 左侧为俯视图, 右侧为侧视图; (c) MAPbI3薄膜在波长500—800 nm下的吸收光谱
Fig. 1. (a) Schematic diagram of MAPbI3/Graphene-based modulator structure; left, 3D schematic; right, side view; (b) SEM characterization of MAPbI3/Graphene composite thin film on silicon substrate; left, top view; right, side view; (c) absorption spectrum of MAPbI3 thin film at the wavelength range of 500–800 nm.
图 2 (a) MAPbI3/Graphene模型光照示意图; (b) MAPbI3/Graphene复合薄膜加光激励后的能带示意图以及电子-空穴的流动情况
Fig. 2. (a) Schematic of MAPbI3/Graphene model with light; (b) schematic diagram of energy band of MAPbI3/Graphene composite thin film after adding light excitation and electron-hole flow condition.
图 3 (a) Graphene/Si调制器和(b) MAPbI3/Graphene/Si调制器的I-V曲线测试示意图; (c) Graphene/Si调制器和(d) MAPbI3/Graphene/Si调制器在光照(红线)和无光照(蓝线)下的I-V测试曲线; (e) Graphene/Si调制器和(f) MAPbI3/Graphene/Si调制器在0.5 V偏压, 15.1 mW功率光激励下的开关响应曲线
Fig. 3. Schematic diagram of I-V curve test for (a) Graphene/Si modulator and (b) MAPbI3/Graphene/Si modulator; I-V test curves for (c) Graphene/Si modulator and (d) MAPbI3/Graphene/Si modulator under light (red line) and no light (blue line); switching response curves of (e) Graphene/Si modulator and (f) MAPbI3/Graphene/Si modulator under light excitation with 0.5 V bias and 15.1 mW power.
图 4 在不同功率密度的激光照射下通过(a)裸硅和(b) MAPbI3/Graphene/Si传输的太赫兹脉冲时域波形; 在不同功率密度的激光照射下通过(c)裸硅和(d) MAPbI3/Graphene/Si传输的太赫兹脉冲的归一化透射; 在不同功率密度的激光照射下(e) 裸硅和(f) MAPbI3/Graphene/Si的太赫兹调制深度
Fig. 4. Time domain waveforms of terahertz pulses transmitted through (a) bare silicon and (b) MAPbI3/Graphene/Si under laser irradiation at different power density; normalized transmission of terahertz pulses transmitted through (c) bare silicon and (d) MAPbI3/Graphene/Si under laser irradiation at different power density; terahertz modulation depth of (e) bare silicon and (f) MAPbI3/Graphene/Si under laser irradiation at different power density.
图 5 (a) MAPbI3/Graphene/Si复合结构的响应时间测试示意图; (b) 器件的响应时间函数
Fig. 5. (a) Schematic diagram of response time testing of MAPbI3/Graphene/Si composite structure; (b) response time function of device.
图 6 (a) 仿真模拟模型示意图; (b) 通过改变模型的电导率来调制太赫兹脉冲的波形
Fig. 6. (a) Schematic diagram of the simulated model; (b) waveform of modulated terahertz pulse by changing conductivity of model.
表 1 常见太赫兹调制器性能比较
Table 1. Performance comparison of common terahertz modulators.
Material Wavelength/nm Power density/(mW·mm–2) Spectral range/THz MD/% Reference MAPbI3/Graphene/Si 808 6.1 0.2—2.5 88.3 This work MAPbI3/SiO2 1064 53.1 0.1—1.0 66.2 [33] MoS2/Si 532 2.4 0.2—2.0 75.0 [34] Graphene/TiO2/Si 808 71.3 0.3—1.7 88.0 [35] Silicon nanotip 808 60.0 0.1—4.0 91.6 [36] MAPbBr3/Si 450 30.0 0.2—2.6 80.0 [37] CsPbBr3/Si 450 20.0 0.23—0.35 45.5 [38] Graphene/Si 780 159.2 0.2—2.0 99.0 [29] 
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[1] Ma J J, Shrestha R, Adelberg J, Yeh C Y, Hossain Z, Knightly E, Jornet J M, Mittleman D M 2018 Nature 563 89
Google Scholar
[2] Kawano Y 2013 Contemp. Phys. 54 143
Google Scholar
[3] Yan Z Y, Zhu L G, Meng K, Huang W X, Shi Q W 2022 Trends Biotechnol. 40 816
Google Scholar
[4] Smith R A 2021 Appl. Sci. 11 11724
Google Scholar
[5] Wang R Q, Xie L J, Hameed S, Wang C, Ying Y B 2018 Carbon 132 42
Google Scholar
[6] 张真真, 黎华, 曹俊诚 2018 67 090702
Google Scholar
Zhang Z Z, Li H, Cao J C 2018 Acta Phys. Sin. 67 090702
Google Scholar
[7] Xu G F, Skorobogatiy M 2022 J. Infrared Millim. Terahertz Waves 43 728
Google Scholar
[8] Song Q, Chen H, Zhang M, Li L, Yang J B, Yan P G 2021 APL Photonics 6 056103
Google Scholar
[9] Shi Z W, Cao X X, Wen Q Y, Wen T L, Yang Q H, Chen Z, Shi W S, Zhang H W 2018 Adv. Opt. Mater. 6 1700620
Google Scholar
[10] Kakenov N, Ergoktas M S, Balci O, Kocabas C 2018 2D Mater. 5 035018
Google Scholar
[11] Zeng H X, Gong S, Wang L, Zhou T C, Zhang Y, Lan F, Cong X, Wang L Y, Song T Y, Zhao Y C, Yang Z Q, Mittleman D M 2022 Nanophotonics 11 415
Google Scholar
[12] Wang J, Tian H, Li S, Li L, Guo W P, Zhou Z X 2020 Opt. Lett. 45 1276
Google Scholar
[13] 田伟, 文岐业, 陈智, 杨青慧, 荆玉兰, 张怀武 2015 64 028401
Google Scholar
Tian W, Wen Q Y, Chen Z, Yang Q H, Jing Y L, Zhang H W 2015 Acta Phys. Sin. 64 028401
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[14] Hochberg M, Baehr J T, Wang G X, Shearn M, Harvard K, Luo J D, Chen B Q, Shi Z W, Lawson R, Sullivan P, Jen K Y A, Dalton L, Scherer A 2006 Nat. Mater. 5 703
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[18] Xing P K, Wu Q 2022 Opt. Mater. 133 112832
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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