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报道了国内首次实现出光功率达到毫瓦量级的单横模1550 nm波段垂直腔面发射半导体激光器(vertical-cavity surface-emitting laser, VCSEL). 设计了基于InAlGaAs四元量子阱的应变发光区结构; 设计并制备了具有隧穿特性的台面结构, 实现了对载流子空穴的高效注入及横向模式调控; 采用半导体分布式布拉格反射镜与介质反射镜结合的方式制备了1550 nm VCSEL的反射镜结构. VCSEL中心波长位于1547.6 nm, 工作温度为15 ℃时最高出光功率可达到2.6 mW, 最高单模出光功率达到0.97 mW, 最大边模抑制比达到35 dB. 随着工作温度增加, 激光器最高出光功率由于发光区增益衰减而降低, 然而35 ℃下最大出光功率仍然可以达到1.3 mW. 激光器中心波长随工作电流漂移系数为0.13 nm/mA, 并且激光波长在单模工作区呈现出非常一致的漂移速度, 在气体探测领域具有很好的应用潜力. 本研究为下一步通过高密度集成获得高功率1550 nm VCSEL列阵奠定了基础.
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关键词:
- 垂直腔面发射半导体激光器 /
- 长波长 /
- 单横模 /
- 光通信 /
- 传感探测
We report on a 1550-nm vertical-cavity surface-emitting laser (VCSEL) with single mode power of 0.97 mW. The quaternary AlGaInAs quantum well is designed to improve the gain level in an active region. The mesa structure with tunneling capability is designed and fabricated to achieve the efficient carrier injection and the transverse mode guiding. The distributed Bragg reflector (DBR) mirror of 1550 nm VCSEL consists of the semiconductor DBR and outer dielectric DBR. The central wavelength of VCSEL is 1547.6 nm. The maximum output power of 2.6 mW is achieved at 15 ℃, and the maximum single-mode output power is 0.97 mW. The side mode suppression ratio (SMSR) can reach more than 35 dB. The maximum output power decreases with operation temperature increasing. However, the maximum output power of more than 1.3 mW is also gained at 35 ℃. The shift coefficient of the central wavelength varying with the operation current is 0.13 nm/mA. And the wavelength shows a stable shift with the operation current in the single-mode working region, which indicates the application possibility in the field of gas detection.-
Keywords:
- vertical-cavity surface-emitting laser /
- long wavelength /
- single-mode operation /
- optical communication /
- sensing and detection
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图 2 (a) 6 nm Al0.06Ga0.22InAs量子阱的价带子能级分布情况; (b)不同载流子浓度下的增益谱变化情况
Fig. 2. (a) Separation of valence band energy level of 6 nm Al0.06Ga0.22InAs quantum wells; (b) the gain spectra of quantum well under different carrier density.
图 3 隧穿结结构的电流-电压特性模拟结果, 插图为各隧穿层在1 V偏压下的能带结构计算结果及载流子传输过程示意图
Fig. 3. Simulation results of the current-voltage curve of tunneling junction mesa; the insert shows the energy band structure under the bias voltage of 1 V and the schematic of carrier transmission process.
图 4 隧穿结台面刻蚀深度对芯层与包层的折射率差值Δneff = neff-core－neff-cladding以及单模工作区直径的影响
Fig. 4. Calculated Δneff of 1550 nm VCSEL and the diameter of single-mode operation changing with the etch depth of mesa structure.
图 5 不同工作温度下VCSEL的功率-电流曲线测试结果
Fig. 5. Power-current-characteristics of 1550 nm VCSEL under different operation temperatures.
图 6 工作温度为15 ℃时, (a) VCSEL在不同电流下的单模激光光谱, 以及(b)出光波长与SMSR随工作电流的变化关系
Fig. 6. (a) Single-mode spectra of 1550 nm VCSEL for various bias currents; (b) the wavelength and SMSR versus the operation current. The operation temperature is 15 ℃.
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[1] Kamau P, Ming M, Timothy B G, Christian N, Enno R, Markus O, Monroy I T 2011 J. Opt. Commun. Netw 3 399
Google Scholar
[2] Boucher J F, Callahan J J 2011 Proceedings of Defense, Security, and Sensing SPIE Orlando, United States, April 25–29, 2011 p80390B1
[3] Nicolas D, Sébastien C 2002 Prog. Energ. Combust. 28 107
Google Scholar
[4] Hofmann W, Muller M, Nadtochiy A, Meltzer C, Mutig A, Bohm G, Rosskopf J, Bimberg D, Amann M C, Chang-Hasnain C 2009 Opt. Express 17 17547
Google Scholar
[5] Dalila E, Michael Y, Hung K C, Sam S K, Neelanjan B, Sam C, Ghulam H, Mike H, Chris C 2020 Proceedings of SPIE OPTO San Francisco, California, United States, February 1–6, 2020 p113000R
[6] Ralph J, Virgil B, Jim T, Bo-Su C, David M, James O, Tzu-Yu W, Jin K, Ho-Ki K, Jae-Hyun R, Gyoungwon P, Edie K, Helen C, Mike R, Terry M, Joe G 2003 Proceedings of Integrated Optoelectronics Devices SPIE San Jose, CA, United States, January 25–31, 2003 p4994
[7] Michael M, Werner H, Tobias G, Markus H, Philip W, Robin D N, Enno R, Gerhard B, Dieter B, Markus-Christian A 2011 IEEE J. Sel. Top. Quant. 17 1158
Google Scholar
[8] Syrbu A, Mircea A, Mereuta A, Caliman A, Berseth C A, Suruceanu G, Iakovlev V, Achtenhagen M, Rudra A, Kapon E 2004 IEEE Photon. Technol. Lett. 16 1230
Google Scholar
[9] Gerhard B, Markus O, Robert S, Juergen R, Christian L, Markus M, Fabian K, Felix M, Ralf M, Markus-Christian A 2003 J. Cryst. Growth. 251 748
Google Scholar
[10] Müller M, Hofmann W, Böhm G, Amann M C 2009 IEEE Photon. Technol. Lett. 21 1615
Google Scholar
[11] Caliman A, Mereuta A, Suruceanu G, Iakovlev V, Sirbu A, Kapon E 2011 Opt. Express 19 16996
Google Scholar
[12] Yi R, Yang W J, Christopher C, Michael C Y H, Philip W, Salman K, Mohammad R C, Morteza Z, Alan E W, Connie J C H 2013 IEEE J. Sel. Top. Quant. 19 1701311
Google Scholar
[13] Priyanka G, Mohit S, Ananya J, Monika K, Somendra P S, Nikita S, Gurjit K 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), Chennai, India, March 3–5, 2016 p4220
[14] Zhao D, Yang H, Chuwongin S, Seo J H, Ma Z, Zhou W 2012 IEEE Photonics. J. 4 2169
Google Scholar
[15] LIU L J, WU Y D, WANG Y, WANG L L, An J M, ZHAO Y W 2020 J. Infrared Millim. Waves 39(4) 397
Google Scholar
[16] Dalila E, Valdimir I, Alexei S, Grigore S, Zlatco M, Andrei C, Alexandru M, Elyahou K 2014 Opt. Express 22 32180
Google Scholar
[17] 张继业, 张建伟, 曾玉刚, 张俊, 宁永强, 张星, 秦莉, 刘云, 王立军 2020 69 054204
Google Scholar
Zhang J Y, Zhang J W, Zeng Y G, Zhang J, Ning Y Q, Zhang X, Qin L, Liu Y, Wang L J 2020 Acta Phys. Sin. 69 054204
Google Scholar
[18] Weng W C, Kent D C, Mary H C, Kevin L L, Hadley G R 1997 IEEE J. Sel. Top. Quant. 33 1810
Google Scholar
[19] Hadley G R 1995 Opt. Lett. 20 1483
Google Scholar
[20] Zhang J W, Zhang X, Zhu H B, Zhang J, Ning Y Q, Qin L, Wang L J 2015 Opt. Express 23 14763
Google Scholar
[21] Unold H J, Mahmoud S W Z, Jager R, Kicherer M, Riedl M C, Ebeling K J 2000 IEEE Photon. Technol. Lett. 12 939
Google Scholar
[22] Nikolay N L, James A L, Jorg R K, Vitaly A S, Dieter B, Philip M, Gerrit F, Alexey S P, Denis M, Gerard K, Adrian A, Leonid Y K, Sergey A B, Innokenty I N, Nikolay A M, Christoph C, Ronald F 2012 Proceedings of SPIE OPTO San Francisco, California, United States, January 21–26, 2012 p82760K
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