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针对InGaAs单光子雪崩光电二极管（SPAD）的光电感应特性，研究了基于门控主动式淬灭的SPAD动态偏置控制和电路实现的策略. 采用门控主动淬灭控制可降低淬灭时间，有效抑制暗计数和后脉冲效应. 接口感应检测电路采用标准互补金属氧化物半导体（CMOS）工艺进行制造，而SPAD则采用非标准CMOS工艺. 利用铟柱互连混合封装工艺实现SPAD与感应接口电路的协同工作. 在低温-30 ℃的条件下，实现了SPAD光触发雪崩电流信号的提取和快速淬灭. 研究了感应电阻和临界检测电压对传感检测电性能的影响，并采用简单电路结构实现状态检测，实测得到的SPAD恢复时间、传输延时分别为575，563 ps，淬灭时间为1.88 ns，满足纳秒级精度传感检测应用的需要.A gated operation dynamic bias control strategy of InGaAs single-photon avalanche diode (SPAD) and circuit implementation are proposed based on the research of the SPAD performances. By the gated operation active quenching method the quenching time can be lowered, also dark count and afterpulsing effect are inhibited. The circuit fabricated by standard complementary metal oxide semiconductor (CMOS) technology and SPAD fabricated by non-standard CMOS technology are interconnected through the indium column interconnection hybrid packaging process. In the low temperature (-30 ℃) test conditions, the avalanche current signal triggered by light is extracted and avalanche phenomenon is quickly quenched. Studies in this paper are the sensing resistance and critical sensing voltage effect on electrical performance of the detector and the implementation method of the detection circuit. The recovery time and transfer delay of the SPAD are 575 and 563 ps, respectively and the quenching time is 1.88 ns. These characteristics meet the requirements for the nanosecond precision sensor detection application.
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Keywords:
- single-photon avalanche diode /
- Geiger mode /
- gated operation /
- active quench
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[2] Aull B F, Loomis A H, Young D J 2002 Lincoln Lab. J. 13 355
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[6] Liu Y, Wu Q L, Han Z F, Dai Y M, Guo G C 2010 Chin. Phys. B 19 080308
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[10] Wang J D, Wu Z H, Zhang B, Liao C J, Liu S H 2008 Acta Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[11] Sun Z B, Ma H Q, Lei M, Yang H D, Wu L A, Zhai G J, Feng J 2007 Acta Phys. Sin. 56 5790 (in Chinese) [孙志斌, 马海强, 雷鸣, 杨捍东, 吴令安, 翟光杰, 冯稷 2007 56 5790]
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[1] Itzler M A, Entwistle M, Owens M, Patel K, Jiang X D, Slomkowski K, Rangwala S 2010 Proc. SPIE 7808 78080C1
[2] Aull B F, Loomis A H, Young D J 2002 Lincoln Lab. J. 13 355
[3] Tisa S, Zappa F, Tosi A, Cova S 2007 Sensors Actuat. A: Phys. 140 113
[4] Gallivanoni A, Rech I, Ghioni M 2010 IEEE Trans. Nucl. Sci. 57 3815
[5] Niclass C, Favi C, Kluter T, Gersbach M, Charbon E 2008 IEEE J. Solid State Circuits 43 2977
[6] Liu Y, Wu Q L, Han Z F, Dai Y M, Guo G C 2010 Chin. Phys. B 19 080308
[7] Cheng N, Huang G F, Wang J D, Wei Z J, Guo J P, Liao C J, Liu S H 2010 Acta Phys. Sin. 59 5338 (in Chinese) [程楠, 黄刚锋, 王金东, 魏正军, 郭健平, 廖常俊, 刘颂豪 2010 59 5338]
[8] Wei Z J, Li K Z, Zhou P, Wang J D, Liao C J, Guo J P, Liang R S, Liu S H 2008 Chin. Phys. B 17 4142
[9] Gao X J, Zhang X C, Chen Y 2007 Semiconduct. Optoelectron. 28 617 (in Chinese) [高新江, 张秀川, 陈扬 2007 半导体光电 28 617]
[10] Wang J D, Wu Z H, Zhang B, Liao C J, Liu S H 2008 Acta Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[11] Sun Z B, Ma H Q, Lei M, Yang H D, Wu L A, Zhai G J, Feng J 2007 Acta Phys. Sin. 56 5790 (in Chinese) [孙志斌, 马海强, 雷鸣, 杨捍东, 吴令安, 翟光杰, 冯稷 2007 56 5790]
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