激光陶瓷晶体最佳掺杂浓度的理论研究

李威; 陈长水; 韦俊雄; 韩田; 刘颂豪

doi:10.7498/aps.63.087801

摘要

由于微观结构的差异，使激光单晶的理论计算方法并不适用于激光陶瓷晶体. 本文通过分析激光陶瓷晶体的荧光衰减曲线和晶界特性，获得了连续抽运和脉冲抽运条件下激光陶瓷上能级布居数与掺杂浓度的关系表达式；并以Nd3+：YAG激光陶瓷为例，研究其最佳掺杂浓度，就其激光性能与Nd3+：YAG激光单晶进行了比较研究. 结果表明：Nd3+：YAG激光陶瓷不但最佳掺杂浓度大，而且在掺杂浓度相同时，其上能级布居数较高，并且Nd3+：YAG激光陶瓷在很大掺杂浓度范围内的上能级布居数都大于激光单晶在最佳掺杂浓度时的上能级布居数.

关键词:

Abstract

The ion-doped ceramic crystal is different from the single crystal in the respect of theoretical calculation method, because of the presence of grain boundaries. The populations at the active levels in both CW and pulsed regimes each as a function of the concentration of active impurities are deduced by means of the luminescence decay curve. Taking the Nd3+:YAG laser ceramic for example, we calculate the optimal doping concentration and compare our calculated results with reported experimental data, showing that our theoretical calculation is in line with the trend of the experimental data, and also we compare our results with the Nd3+:YAG single crystal theoretical data. showing that the ceramic crystal is superior to the laser doped laser crystal in the respect of population.

Keywords:

作者及机构信息

1.
华南师范大学, 广东省微纳光子功能材料与器件重点实验室, 广州 510631

基金项目: 国家高技术研究发展计划（批准号：2012AA040210）资助的课题.

Authors and contacts

1.
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA040210).

参考文献

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施引文献

[1]	Ikesue A, Kinoshita T, Kamata K, Yoshida K 1995 J. Am. Ceram. Soc. 78 1033
[2]
[3]	Choubey A, Vishwakarma S C, Ali S, Jain R K, Upadhyaya B N, Oak S M 2013 Opt. Laser Technol. 51 98
[4]
[5]	Li J, Pan Y B, Zeng Y P, Liu W B, Jiang B X, Guo J K 2013 Int. J. Refract. Met. Hard Mater. 39 44
[6]	Mariola O R, Jeffrey W, Li H F, Yan L A, Joseph S, Gary L M, Dierolf V, Liu Z W, Ikesue A, Robert L B, Venkatraman G 2008 Opt. Express 16 5965
[7]
[8]
[9]	Hu X, Hong F Y, Wu L N 2002 Acta Phys. Sin. 51 2002 (in Chinese) [胡晓, 洪方煜, 邬良能 2002 51 2002]
[10]
[11]	Huang L L, Zeng X B, Chen J Q 1994 J. Zhejiang Univ. Sci. 28 584 (in Chinese) [黄莉蕾, 曾宪标, 陈继勤 1994 浙江大学学报 18 584]
[12]	Yang Q H, Xu J, Su L B, Zhang H W 2006 Acta Phys. Sin. 55 1207 (in Chinese) [杨秋红, 徐军, 苏良碧, 张红伟 2006 55 1207]
[13]
[14]
[15]	Voronko Y K, Mamedov T G, Osiko V V, Prokhorov A M, Sakun V P, Shcherbakov I A 1976 Sov. Phys. JETP 44 251
[16]
[17]	Forster T 1948 Ann. Phys. (N.Y.) 2 55
[18]
[19]	Burshtein A I 1972 Sov. Phys. JETP 35 882
[20]	Privis Y S, Smirnov V A, Shcherbakov I A 1983 Sov. J. Quantum Electron 13 868
[21]
[22]
[23]	Caird J A, Ramponi A J, Staver P R 1991 J. Opt. Soc. Am. B 8 1391
[24]
[25]	Shi D K 2003 Foundation of Material Science (Vol. 2) (Beijing: China Machine Press) pp124-133, 139-141 (in Chinses) [石德珂 2003 科学材料基础 (第2版) (北京: 机械工业出版社) 第124133, 139141页]
[26]	Wang Y B, Xu Y, Zhang Y, Yu X, Song G F, Chen L H 2011 Chin. Phys. B 20 067302
[27]
[28]
[29]	Li H L, Zhang Z, L Y B, Huang J Z, Zhang Y, Liu R X 2013 Acta Phys. Sin. 62 047101 (in Chinses) [李泓霖, 张仲, 吕英波, 黄金昭, 张英, 刘如喜 2013 62 047101]
[30]	Mclean D 1957 Grain Boundaries in Metals (Oxford: Clarendon Press) pp116-149
[31]
[32]
[33]	Jason R T, Christopher A S 2009 Phys. Rev. B 79 094112
[34]	Heather A M, Christopher A S 2013 Acta Mater. 61 2121
[35]
[36]	Yang H, Qin X P, Zhang J, Ma J, Tang D Y, Wang S W, Zhang Q T 2012 Opt. Mater. 34 940
[37]
[38]	Mezeix L, Green D J 2006 Int. J. Appl. Ceram. Tech. 3 166
[39]
[40]
[41]	Lu J, Ueda K, Yagi H, Yanagitani T, Akiyama Y, Kaminskii A A 2002 J. Alloys Compd. 341 220
[42]
[43]	Lu J, Prabha M, Xu J Q, Ueda K 2000 Appl. Phys. Lett. 77 3707

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