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锰钴镍复合氧化物是一种具有半导体性质的热敏材料. 本文采用金属有机沉积技术于室温条件下、在Si衬底上沉积一定 厚度的Mn1.74Co0.72Ni0.54O4金属 有机化合物薄膜, 并通过醇热反应进行低温结晶化合成, 可得到Mn1.74Co0.72Ni0.54O4结晶薄膜. 通过X 射线衍射、场发射扫描电子显微镜 (FESEM) 以及阻温特性等测试方法表征, 讨论了醇热反应对锰钴镍热敏薄膜的物相结构、微观形貌以及电学性能的影响. X射线衍射图显示薄膜已出现尖晶石结构的特征峰. 电镜照片说明结晶薄膜的表面较为平整、孔隙率低. 阻温特性关系表明薄膜具有明显的负温度系数效应, 室温(≈27°) 电阻率约为303.13 Ω·cm.Manganese cobalt nickel complex oxide is a thermal-sensitive material with the property of semiconductor. In this paper, Mn1.74Co0.72Ni0.54O4 (MCN) thin film was prepared in air using metal-organic-deposition method at room temperature on Si substrate, and the crystallization synthesis of the MCN thin film was prepared using alcohol-thermal reaction. According to X-ray diffraction, field emission scanning electron microscope (FESEM) and the relationship between resistivity and temperature, effects of MCN thin film made by alcohol-thermal reaction on crystalline microstructure, surface morphology and electrical properties were investigated. X-ray diffraction pattern showed that the MCN thin film appears to be spinel structure with predominant spinel peaks. Field emission scanning electron microscope showed that the surface morphology of MCN thin film is crack-free and compact surface. The relationship between resistivity and temperature of the thin film Mn1.74Co0.72Ni0.54O4 was that the resistivity decreases with the increase in temperature. The room temperature(≈ 27℃) resistivity of the MCN thin film was 303.13 Ω·cm.
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Keywords:
- alcohol-thermal reaction /
- manganese cobalt nickel thin film /
- thermistor /
- low temperature synthesis
[1] Kukuruznyak D A, Bulkley S A, Omland K A, Ohuchi F S, Gregg M C 2001 Thin Solid Films 385 89
[2] Hu W, Qin N, Wu G H, Lin Y, Li S, Bao D H 2012 J. Am. Chem. Soc. 134 14658
[3] Yuan C L, Liu X Y, Liang M F, Zhou C R, Wang H 2011 Sens. Actuators A 167 291
[4] Cheng F Y, Shen J, Peng B, Pan Y D, Tao Z L, Chen J 2011 J. Nat. Chem. 3 79
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[6] Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H 2008 Thin Solid Films 516 5931
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[12] Prado-Gonjal J, Ávila D, Villafuerte-Castrejón M E, González-García F, Fuentes L, Gómez R W, Pérez-Mazariego J L, Marquina V, Morán E 2011 Solid State Sci 13 2030
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[15] Shweta J, Sunit R, Suresh G, Amalnerkar D 2011 Microelectron. Eng. 88 82
[16] Sun S Y, Zhang Q H, Yu J G 2010 J. Inorg. Mater. 25 626
[17] Zhang L, Zhang Y, Deng J G, Dai H X 2012 J. Nat. Gas Chem. 21 69
[18] Basu A, Brinkman A W, Schmida R, Klusek Z, Kowalczyk P, Datta P K 2004 J. Eu. Ceram. Soc. 24 1149
[19] Park K 2006 J. Eu. Ceram. Soc. 26 909
[20] Jadhav R, Kulkarni D, Puri V 2010 J. Mater. Sci.: Mater. Electron. 21 503
[21] He L, Ling Z Y 2011 Appl. Phys. Lett. 98 242112
[22] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[23] Kulkarni D C, Patil S P, Puri V 2008 Microelectron. J. 39 248
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[1] Kukuruznyak D A, Bulkley S A, Omland K A, Ohuchi F S, Gregg M C 2001 Thin Solid Films 385 89
[2] Hu W, Qin N, Wu G H, Lin Y, Li S, Bao D H 2012 J. Am. Chem. Soc. 134 14658
[3] Yuan C L, Liu X Y, Liang M F, Zhou C R, Wang H 2011 Sens. Actuators A 167 291
[4] Cheng F Y, Shen J, Peng B, Pan Y D, Tao Z L, Chen J 2011 J. Nat. Chem. 3 79
[5] Kanade S A, Puri V 2006 Mater. Lett. 60 1428
[6] Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H 2008 Thin Solid Films 516 5931
[7] Kanade S A, Puri V 2009 J. Alloys Compd. 475 352
[8] He L, Ling Z Y, Huang Y T, Liu Y S 2011 Mater. Lett. 65 1632
[9] Song W K, Schulze H M, Saint John D B, Podraza N J, Dickey E C, Trolier McKinstry S S 2012 J. Am. Ceram. Soc. 95 2562
[10] Sun J J, Tuo W L, Chang A M, Zhao Q, Lan Y Q 2006 J. Funct. Mater. Devices 12 361 (in Chinese) [孙俊菊, 妥万禄, 常爱民, 赵青, 兰玉歧 2006 功能材料与器件学报 12 361]
[11] Wang L M, Wei Z R, Wu F 2002 J. Heb. Univer. (Nat Sci. Edition) 22 345 (in Chinese) [王立明, 韦志仁, 吴峰 2002 河北大学学报 (自然科学版) 22 345]
[12] Prado-Gonjal J, Ávila D, Villafuerte-Castrejón M E, González-García F, Fuentes L, Gómez R W, Pérez-Mazariego J L, Marquina V, Morán E 2011 Solid State Sci 13 2030
[13] Tan H, Tao M D, Song S G 1994 Funct. Mater. 25 350 (in Chinese) [谭辉, 陶明德, 宋世庚 1994 功能材料 25 350]
[14] Yuan R L, Shi E W, Xia C T, Wang B G, Zhong W Z 1996 Acta Phys. Sin. 12 131 (in Chinese) [元如林, 施尔畏, 夏长泰, 王步国, 仲维卓 1996 12 131]
[15] Shweta J, Sunit R, Suresh G, Amalnerkar D 2011 Microelectron. Eng. 88 82
[16] Sun S Y, Zhang Q H, Yu J G 2010 J. Inorg. Mater. 25 626
[17] Zhang L, Zhang Y, Deng J G, Dai H X 2012 J. Nat. Gas Chem. 21 69
[18] Basu A, Brinkman A W, Schmida R, Klusek Z, Kowalczyk P, Datta P K 2004 J. Eu. Ceram. Soc. 24 1149
[19] Park K 2006 J. Eu. Ceram. Soc. 26 909
[20] Jadhav R, Kulkarni D, Puri V 2010 J. Mater. Sci.: Mater. Electron. 21 503
[21] He L, Ling Z Y 2011 Appl. Phys. Lett. 98 242112
[22] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[23] Kulkarni D C, Patil S P, Puri V 2008 Microelectron. J. 39 248
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