基于连续性掺杂的高效全荧光白色有机电致发光器件的研究

吴清洋; 谢国华; 张振松; 岳守振; 王鹏; 陈宇; 郭闰达; 赵毅; 刘式墉

doi:10.7498/aps.62.197204

摘要

利用荧光材料PT-01, PT-86, PT-05作为黄色荧光客体, 蓝色荧光客体以及荧光母体制备了一种基于连续性掺杂结构的全荧光白光有机电致发光器件. 其发光层为主体/客体薄层/主体/客体薄层···交替蒸镀的重复单元. 通过优化发光层中主体的厚度并检测发光层中单线态激子的分布, 将黄、蓝两种客体染料生长在发光层中适当的位置, 得到了高效且光谱稳定的全荧光白光器件. 其最大电流效率为11.2 cd/A, 亮度在159–20590 cd/m2范围内色坐标仅有(±0.004,±0.005)的改变. 基于这种连续性掺杂结构制备的器件, 其性能不但可以达到传统主-客体共掺结构所制备的器件的性能,而且具有较高的可重复性, 更适合产业化大批量生产.

关键词:

Abstract

Highly efficient all fluorescent white organic light-emitting devices (WOLED) have been fabricated by means of sequential doping. Fluorescent materials PT-01, PT-86 and PT-05 serve as the yellow guest, blue guest and fluorescent host, respectively. The emission layer consists of a few repeating cells, which are made of sequentially evaporated host and guest layers. From the analyses of the singlet exciton distribution and the influences of the thickness of the host layer, PT-86 and PT-01 are evaporated at the proper locations in the emission layer (EML), yielding a high efficiency and stable all fluorescent WOLEDs. The maximum current efficiency of the WOLED is 11.2 cd/A. In addition, the emission color of this WOLED is fairly stable, consistent with the Commission International de L’Eclairage coordinates, only showing changes (±0.004,±0.005) when luminance increasing from 159 cd/m2 to 20590 cd/m2. The devices based on the method of sequential doping not only have the similar performance compared with that fabricated by co-evaporation doping, but also have higher repeatability, which makes them appropriate for mass-production.

Keywords:

作者及机构信息

1.
吉林大学电子科学与工程学院, 集成光电子学国家重点实验室, 长春 130012;

2.
圣安德鲁斯大学物理学和天文学学院, 有机半导体中心, 法夫, KY16 9SS

基金项目: 国家重点基础研究发展计划(批准号:2010CB327701)和国家自然科学基金(批准号:61275033)资助的课题.

Authors and contacts

1.
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;

2.
Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St. Andrews, Fife KY16 9SS, UK

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB327701), and the National Natural Science Foundation of China (Grant No. 61275033).

参考文献

[1]	D’Andrade B W, Brooks J, Adamovich V, Thompson M E, Forrest S R 2002 Adv. Mater. 14 1032
[2]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[3]	Wang Q, Ding J Q, Ma D G, Cheng Y X, Wang L X, Jing X B, Wang F S 2009 Adv. Funct. Mater. 19 84
[4]	Gather M C, Köhnen A, Meerholz K 2011 Adv. Mater. 23 233
[5]	Adachi C, Baldo M A, Thompson M E, Forrest S R 2001 J. Appl. Phys. 90 5048
[6]	Baldo M A, Adachi C, Forrest S R 2000 Phys. Rev. B 62 10967
[7]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 400 908
[8]	Schwartz G, Pfeiffer M, Reineke S, Walzer K, Leo K 2007 Adv. Mater. 19 3672
[9]	Hatwar T K, Spindler J P, Kondakova M, Giesen D, Deaton J, Vargas J R 2010 SID Symposium Digest of Technical Papers 41 778
[10]	Cheng G, Zhao Y, Zhang Y F, Liu S Y 2004 Appl. Phys. Lett. 84 22
[11]	Xie W F, Zhao Y, Li C N, Liu S Y 2005 Semicond. Sci. Technol. 20 57
[12]	Yang H S, Zhao Y, Hou J Y, Liu S Y 2006 Displays 27 183
[13]	Divayana Y, Sun X W 2007 Phys. Rev. Lett. 99 143003
[14]	Divayana Y, Sun X W 2008 Org. Electron. 9 136
[15]	Divayana Y, Sun X W 2009 Org. Electron. 10 320
[16]	Divayana Y, Sun X W 2011 Org. Electron. 12 1
[17]	Chen P, Zhao L, Duan Y, Cheng G, Zhao Y, Liu S Y 2011 Acta Phys. Sin. 60 097203 (in Chinese) [陈平, 赵理, 段羽, 程刚, 赵毅, 刘式墉 2011 60 097203]
[18]	Kawamura Y, Brooks J, Brown J J, Sasabe H, Adachi C 2006 Phys. Rev. Lett. 96 017404

施引文献

[1]	D’Andrade B W, Brooks J, Adamovich V, Thompson M E, Forrest S R 2002 Adv. Mater. 14 1032
[2]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[3]	Wang Q, Ding J Q, Ma D G, Cheng Y X, Wang L X, Jing X B, Wang F S 2009 Adv. Funct. Mater. 19 84
[4]	Gather M C, Köhnen A, Meerholz K 2011 Adv. Mater. 23 233
[5]	Adachi C, Baldo M A, Thompson M E, Forrest S R 2001 J. Appl. Phys. 90 5048
[6]	Baldo M A, Adachi C, Forrest S R 2000 Phys. Rev. B 62 10967
[7]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 400 908
[8]	Schwartz G, Pfeiffer M, Reineke S, Walzer K, Leo K 2007 Adv. Mater. 19 3672
[9]	Hatwar T K, Spindler J P, Kondakova M, Giesen D, Deaton J, Vargas J R 2010 SID Symposium Digest of Technical Papers 41 778
[10]	Cheng G, Zhao Y, Zhang Y F, Liu S Y 2004 Appl. Phys. Lett. 84 22
[11]	Xie W F, Zhao Y, Li C N, Liu S Y 2005 Semicond. Sci. Technol. 20 57
[12]	Yang H S, Zhao Y, Hou J Y, Liu S Y 2006 Displays 27 183
[13]	Divayana Y, Sun X W 2007 Phys. Rev. Lett. 99 143003
[14]	Divayana Y, Sun X W 2008 Org. Electron. 9 136
[15]	Divayana Y, Sun X W 2009 Org. Electron. 10 320
[16]	Divayana Y, Sun X W 2011 Org. Electron. 12 1
[17]	Chen P, Zhao L, Duan Y, Cheng G, Zhao Y, Liu S Y 2011 Acta Phys. Sin. 60 097203 (in Chinese) [陈平, 赵理, 段羽, 程刚, 赵毅, 刘式墉 2011 60 097203]
[18]	Kawamura Y, Brooks J, Brown J J, Sasabe H, Adachi C 2006 Phys. Rev. Lett. 96 017404

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