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本文提出一种基于偏振旋转光反馈下的外光注入垂直腔 表面发射激光器(VCSEL)产生高性能毫米波的方案, 并利用描述外部扰动下VCSEL动态特性的自旋反转模型(SFM), 对所产生的毫米波的特性进行了数值研究. 研究结果表明: 一个受到主VCSEL(M-VCSEL)光注入的副VCSEL(S-VCSEL)在一定条件下可以产生单周期(P1)振荡, 即在光波上调制了一个微波信号. 通过调节外光注入强度i以及S-VCSEL与M-VCSEL之间频率失谐, 可以获得频率在3060 GHz范围内连续可调的毫米波信号. 在外光注入VCSEL中引入偏振旋转光反馈, 通过选取合适的反馈强度f以及反馈延迟时间, 产生的毫米波信号的线宽可以得到明显窄化. 对于光注入S-VCSEL所产生的线宽为5.509 MHz的毫米波, 在引入偏振旋转光反馈后, 毫米波线宽可以降低到230.2 kHz. 本文的研究对高速光载无线(RoF)系统中优质毫米波信号的获取具有一定的参考意义.A scheme of optical generation of high-quality millimeter-wave based on the optically injected vertical-cavity- surface-emitting laser (VCSEL) subject to polarization-rotated optical feedback is proposed in this paper. Based on the spin-flip model (SFM), wich external disturbances taken into account, the performances of the millimeter-wave generated by this scheme are numerically investigated. The results show that under suitable operation conditions, a slave VCSEL (S-VCSEL) injected by a master VCSEL (M-VCSEL) will operate in a period-one (P1) oscillation state and the output optical intensity of S-VCSEL looks like being modulated by a microwave signal. By adjusting the injection strength iand the frequency detuning between S-VCSEL and M-VCSEL, a millimeter-wave, whose frequency can be continuously adjusted in a large range from 30 GHz to 60 GHz, is obtained. After introducing polarization-rotated optical feedback, the linewidth of millimeter-wave can be obviously narrowed by adjusting the feedback strength i and the feedback delay time . For a millimeter-wave with a linewidth of 5.509 MHz, generated by the optically injected VCSEL, its linewidth can be reduced to 230.2 kHz under optimum feedback parameters. The results obtained in this paper are helpful for acquiring high-quality millimeter-wave used in high speed Radio-over-Fiber (RoF) system.
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Keywords:
- optically injected VCSELs /
- millimeter-wave /
- polarization-rotated optical feedback /
- linewidth
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[2] Capmany J, Novak D 2007 Nature Photon. 1 319
[3] Kim A, Joo Y H, Kim Y 2004 IEEE Trans. Consumer Electron. 50 517
[4] Guennec Y L, Maury G, Yao J P, Cabon B 2006 J. Lightwave Technol. 24 1277
[5] Davide D, Giovanni T, Pier F, Luigi T 2011 Optics Commun. 284 2751
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[21] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. A 52 1728
[22] Regalado J M, Prati F, Miguel M S, Abraham N B 1997 IEEE J Quantum Electron. 33 765
[23] Zhang W L, Pan W, Luo B, Li X F, Zou X H, Wang M Y 2007 Appl. Opt. 46 7262
[24] Wang X F, Xia G Q, Wu Z M 2009 Acta Phys. Sin. 58 4669 (in Chinese) [王小发, 夏光琼, 吴正茂 2009 58 4669]
[25] Yang B X, Xia G Q, Lin X D, Wu Z M 2009 Acta Phys. Sin. 58 1480 (in Chinese) [杨炳星, 夏光琼, 林晓东, 吴正茂 2009 58 1480]
[26] Liu J, Wu Z M, Xia G Q 2009 Opt. Express 17 12619
[27] Leng Z M, Xia G Q, Wu Z M 2009 Optoelectron. & Adv. Mater. - Rap. Commun. 3 644
[28] Chan S C, Liu J M 2004 IEEE J. Sel. Topics Quantum Electron. 10 1025
[29] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. 44 1728
[30] Simpson T B, Liu J M, Gavielides A 1996 IEEE J Quantum Electron. 32 1456
[31] Hwang S K, Liu J M, White J K 2004 IEEE J. Sel. Topics Quantum Electron. 10 974
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[1] Cooper A J 1990 Electron. Lett. 26 2054
[2] Capmany J, Novak D 2007 Nature Photon. 1 319
[3] Kim A, Joo Y H, Kim Y 2004 IEEE Trans. Consumer Electron. 50 517
[4] Guennec Y L, Maury G, Yao J P, Cabon B 2006 J. Lightwave Technol. 24 1277
[5] Davide D, Giovanni T, Pier F, Luigi T 2011 Optics Commun. 284 2751
[6] Lin C T, Chen J, Shih P T 2010 J. Lightwave Technol. 28 2296
[7] Kjebon O, Schatz R, Lourdudoss S, Nilsson S, StAlnacke B, Backbom L 1997 Electron. Lett. 33 488
[8] Novak D, Ahmed Z, Waterhouse R B, Tucker R S 1995 IEEE Trans. Microwave Theory Tech. 43 2257
[9] Derickson D J, Helkey R J, Mar A, Wasserbauer J G, Wey Y G, Bowers J E 1992 IEEE MTT-S Int. Microw. Symp. Dig. 2 753
[10] Genest J, Chamberland M, Tremblay P, Tetu M 1997 IEEE J. Quantum Electron. 33 989
[11] Johansson L A, Seeds A J 2003 J. Lightwave Technol. 21 511
[12] Wake D, Lima C R, Davies P A 1995 IEEE Trans. Microwave Theory Tech. 43 2270
[13] Chan S C, Diaz R, Liu J M 2008 Opt. Quantum Electron. 40 83
[14] Simpson T B, Doft F 1999 IEEE Photon. Technol. Lett. 11 1476
[15] Chan S C, Liu J M 2006 IEEE J. Quantum Electron. 42 699
[16] Simpson T B 1999 Opt. Commun. 170 93
[17] Kaszubowska A, Anandarajah P, Barry L P 2002 IEEE Photon. Technol. Lett. 14 233
[18] Chan S C, Hwang S K, Liu J M 2007 Opt. Express 15 14921
[19] Niu S X, Wang Y C, He H C, Zhang M J 2009 Acta Phys. Sin. 58 7241(in Chinese) [牛生晓, 王云才, 贺虎成, 张明江 2009 58 7241]
[20] Xie H Y, Jin D Y, He L J, Zhang W, Wang L, Zhang W R, Wang W 2008 Acta Phys. Sin. 57 4558 (in Chinense) [谢红云, 金冬月, 何莉剑, 张蔚, 王路, 张万荣, 王圩 2008 57 4558]
[21] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. A 52 1728
[22] Regalado J M, Prati F, Miguel M S, Abraham N B 1997 IEEE J Quantum Electron. 33 765
[23] Zhang W L, Pan W, Luo B, Li X F, Zou X H, Wang M Y 2007 Appl. Opt. 46 7262
[24] Wang X F, Xia G Q, Wu Z M 2009 Acta Phys. Sin. 58 4669 (in Chinese) [王小发, 夏光琼, 吴正茂 2009 58 4669]
[25] Yang B X, Xia G Q, Lin X D, Wu Z M 2009 Acta Phys. Sin. 58 1480 (in Chinese) [杨炳星, 夏光琼, 林晓东, 吴正茂 2009 58 1480]
[26] Liu J, Wu Z M, Xia G Q 2009 Opt. Express 17 12619
[27] Leng Z M, Xia G Q, Wu Z M 2009 Optoelectron. & Adv. Mater. - Rap. Commun. 3 644
[28] Chan S C, Liu J M 2004 IEEE J. Sel. Topics Quantum Electron. 10 1025
[29] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. 44 1728
[30] Simpson T B, Liu J M, Gavielides A 1996 IEEE J Quantum Electron. 32 1456
[31] Hwang S K, Liu J M, White J K 2004 IEEE J. Sel. Topics Quantum Electron. 10 974
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