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丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和积瘤主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免积瘤产生.In the process of nanopowder production by the wire electrical explosion, the ablation of electrodes and the formation of micron-size particles are directly influenced by the way the current is injected into the metal wire from the electrodes. Through the channels which are provided by the contact between the electrodes and the wire ends, as well as the breakdown between them, a series of experiments of electrical explosion is carried out. Results show that the photocurrent detected by photodiodes at the wire ends almost occurs simultaneously with the circuit discharge current, however it at the central section lags behind the circuit discharge current obviously. The initial explosion product of the wire ends is liquid, and that of the other parts of wire is gas. Those results indicate that when the current folows into the contact, the phenomenon of gas discharge also occurs at the wire ends. Because the plasma provides another current path, the energy density of the wire ends is decreased. Hence, the wire ends cannot explode and form remainder on the electrodes. When the current flows into the breakdown, the electrodes ablated is slightly obvious, and there was no remainder on the electrodes.
[1] Dash P K, Balta Y 2011 J . Nanosci. Nanotechnol. 1 25
[2] Lee S B, Jung J H, Bae G N, Lee D J 2010 Aerosol Sci. Tech. 44 1131
[3] Gao B, Zhang H H, Zhang C 2003 Acta. Phys. Sin. 52 1714 (in Chinese) [高波, 张寒虹, 张弛 2003 52 1714]
[4] Wu Y C, Deng J J, Hao S R, Wang M H, Han W H, Zhang N C, Yang Y 2005 High Power Laser and Particle Beams 17 1753 (in Chinese) [伍友成, 邓建军, 郝世荣, 王敏华, 韩文辉, 张南川, 杨宇 2005 强激光与粒子束 17 1753]
[5] ZHANG H H, CHEN Z F 2001 Acta. Phys. Sin. 50 748 (in Chinese) [张寒虹, 陈志福 2001 50 748]
[6] Rousskikh A G, Baksht R B, Labetski A Y, Oreshkin ¨I V I, Shishlov A V, Chaikovskii S A 2004 Plasma. Phys. Rep. 30 944
[7] Zhu L, Luo R K, Bi X S 2008 High Voltage Engineering 34 2177 (in Chinese) [朱亮, 罗仁昆, 毕学松 2008 高电压技术 34 2177]
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[11] Kotov Y A 2009 Nanotechnol. Rus. 7-8 415
[12] Kwon Y S, An V V, Ilyin A P, Tikhonov D V 2007 Mater. Lett. 61 3247
[13] Kinemuchi Y, Ikeuch T, Suzuki t, Suematsu H, Jiang W H, Yatsui K 2002 IEEE Trans. Plasma Sci. 30 1858
[14] Giesselmann M, Heeren T, Neuber A, Walter J, Kristiansen M 2002 IEEE Trans. Plasma Sci. 30 100
[15] Michael J T 2002 J. Phys. D: Appl. Phys. 35 700
[16] Volkov V M, Shaykevich I A 1975 Izv vuzov Fizika 7 138
[17] Wang J D, Wu Z H, Zhang B, Wei Z J, Liao C J, Liu S H 2008 Acta. Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[18] Cheng H F 2000 Optics (Beijing: Higher Education Press) p67 (in Chinese) [章志鸣, 沈元华, 陈惠芬 2000 光学 (北京: 高等教育出版社) 第67页]
[19] Zheng S B, Zhao Q 2009 Fundamental of physical optics (first published) (Changsha: National Defence Industrial Press) p87 [郑少波, 赵清 2009 物理光学基础(第1版) (长沙: 国防工业出版社) 第87页]
[20] Niu E W, Yan D R, He J N, Dong Y C, Li X Z, Feng W R, Zhang J X, Zhang G L, Yang S Z 2006 Acta. Phys. Sin. 55 5535 (in Chinese) [牛二武, 阎殿然, 何继宁, 董艳春, 李香芝, 冯文然, 张建新, 张古令, 杨思泽 2006 55 5535]
[21] Zhu L, Zhu J, Bi X S 2010 China Surf. Eng. 23 65 (in Chinese)[朱亮, 朱锦, 毕学松 2010 中国表面工程 23 65]
[22] Tkachenko S I, Mingaleev A R, Romanova V M, Ter-Oganes'yan A E, Shelkovenko T A, Pikuz S A 2009 Plasma Phys. Rep. 35 734
[23] Clinton E H, John D P, Michael J K, Charles R H 1998 J. Appl. Phys. 84 4992
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[1] Dash P K, Balta Y 2011 J . Nanosci. Nanotechnol. 1 25
[2] Lee S B, Jung J H, Bae G N, Lee D J 2010 Aerosol Sci. Tech. 44 1131
[3] Gao B, Zhang H H, Zhang C 2003 Acta. Phys. Sin. 52 1714 (in Chinese) [高波, 张寒虹, 张弛 2003 52 1714]
[4] Wu Y C, Deng J J, Hao S R, Wang M H, Han W H, Zhang N C, Yang Y 2005 High Power Laser and Particle Beams 17 1753 (in Chinese) [伍友成, 邓建军, 郝世荣, 王敏华, 韩文辉, 张南川, 杨宇 2005 强激光与粒子束 17 1753]
[5] ZHANG H H, CHEN Z F 2001 Acta. Phys. Sin. 50 748 (in Chinese) [张寒虹, 陈志福 2001 50 748]
[6] Rousskikh A G, Baksht R B, Labetski A Y, Oreshkin ¨I V I, Shishlov A V, Chaikovskii S A 2004 Plasma. Phys. Rep. 30 944
[7] Zhu L, Luo R K, Bi X S 2008 High Voltage Engineering 34 2177 (in Chinese) [朱亮, 罗仁昆, 毕学松 2008 高电压技术 34 2177]
[8] Kotov Y A 2003 J. Nanopart. Res. 5 539
[9] Kwon Y S, Jung Y H, Yavorovsky N A, Illyn A P, Kim J S 2001 Scripta. Mater. 44 2247
[10] Kotov Y A, Azarkevich E I, Beketov I B, Demina T M, Murzakaev A M, Samatov O M 1997 Key. Eng. Mater. 132-136 173
[11] Kotov Y A 2009 Nanotechnol. Rus. 7-8 415
[12] Kwon Y S, An V V, Ilyin A P, Tikhonov D V 2007 Mater. Lett. 61 3247
[13] Kinemuchi Y, Ikeuch T, Suzuki t, Suematsu H, Jiang W H, Yatsui K 2002 IEEE Trans. Plasma Sci. 30 1858
[14] Giesselmann M, Heeren T, Neuber A, Walter J, Kristiansen M 2002 IEEE Trans. Plasma Sci. 30 100
[15] Michael J T 2002 J. Phys. D: Appl. Phys. 35 700
[16] Volkov V M, Shaykevich I A 1975 Izv vuzov Fizika 7 138
[17] Wang J D, Wu Z H, Zhang B, Wei Z J, Liao C J, Liu S H 2008 Acta. Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[18] Cheng H F 2000 Optics (Beijing: Higher Education Press) p67 (in Chinese) [章志鸣, 沈元华, 陈惠芬 2000 光学 (北京: 高等教育出版社) 第67页]
[19] Zheng S B, Zhao Q 2009 Fundamental of physical optics (first published) (Changsha: National Defence Industrial Press) p87 [郑少波, 赵清 2009 物理光学基础(第1版) (长沙: 国防工业出版社) 第87页]
[20] Niu E W, Yan D R, He J N, Dong Y C, Li X Z, Feng W R, Zhang J X, Zhang G L, Yang S Z 2006 Acta. Phys. Sin. 55 5535 (in Chinese) [牛二武, 阎殿然, 何继宁, 董艳春, 李香芝, 冯文然, 张建新, 张古令, 杨思泽 2006 55 5535]
[21] Zhu L, Zhu J, Bi X S 2010 China Surf. Eng. 23 65 (in Chinese)[朱亮, 朱锦, 毕学松 2010 中国表面工程 23 65]
[22] Tkachenko S I, Mingaleev A R, Romanova V M, Ter-Oganes'yan A E, Shelkovenko T A, Pikuz S A 2009 Plasma Phys. Rep. 35 734
[23] Clinton E H, John D P, Michael J K, Charles R H 1998 J. Appl. Phys. 84 4992
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