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Quantum dot is a typical nano functional device, which has a very attractive prospect in biotechnology, semiconductor technology, quantum optics and other fields. In this paper, we construct a cavity containing a two-level atom to simulate a nano cavity coupling a two-level quantum dot, and study the electrical transmission in the cavity. We solve the transfer function of a single electron and obtain the formulas of transportation and reflection. By adjusting the intrinsic properties of the cavity and the atom and coupling between them, we study the transmission characteristics of a single electron in the cavity and understand the role of the two-level atom and the cavity in the electrical transport. The results can provide some theoretical support for quantum control of the electron transport in a nano device.
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Keywords:
- single electron /
- transport /
- two-level atom
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[10] Fan S H, Sukru Ekin Kocabas, Shen J T 2010 Phys. Rev. A 82 063821
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[14] Bai J X, Mi XW, Li D J 2010 Acta Phys. Sin. 59 6205(in Chinese) [柏江湘,米贤武,李德俊 2010 59 6205
[15] Likharev K 1987 IEEE Trans. Magn. 23 1142
[16] Fulton T A, Dolan G J 1987 Phys. Rev. Lett. 59 109
[17] Laakso M A, Heikkilä T T, Nazarov Y V 2010 Phys. Rev. B 82 205316
[18] Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Su Z, Guo G C, Jiang H W, Guo G P 2010 Appl. Phys. Lett. 97 262113
[19] Stampfer C, Schurtenberger E, Molitor F, Guettinger J, Ihn T, Ensslin K 2008 Nano. Lett. 8 2378
[20] David M, Kuo T 2006 Phys. Rev. B 73 155331
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[1] Reithmaier J P, Sek G, L ffler A, Hofmann C, Kuhn S,Reitzenstein S, Keldysh L,Kulakovskii V, Reinecke T L,Forchel A 2004 Nature 432 197
[2] Peter E, Senellart P, Martrou D, Lematre A, Hours J,Gérard J M 2005 Bloch. J. Phys. Rev. Lett. 95 067401
[3] Srinivasan K, Painter O 2007 Nature(London) 450 862
[4] Wolfgang Merkel, Holger Mack, Schleich W P, Eric Lutz, Paulus G G, Bertrand Girard Phys. Rev. A 76 023417
[5] Zhou L, Lu J, Sun C P 2007 Phys. Rev. A 76 012313
[6] Liao J Q, Huang J F, Liu Y X, Kuang L M, Sun C P 2009 Phys. Rev. A 80 014301
[7] Shen J T, Fan S H 2009 Phys. Rev. A 79 023837
[8] Paolo Longo, Peter Schmitteckert, Kurt Busch 2010 Phys. Rev. Lett. 104 023602
[9] Liao J Q, Law C K 2010 Phys. Rev. A 82 053836
[10] Fan S H, Sukru Ekin Kocabas, Shen J T 2010 Phys. Rev. A 82 063821
[11] Wu S Q, Chen X W, Sun W L, Wang X J 2004 Acta Phys. Sin. 53 2336(in Chinese) [吴绍全,谌雄文,孙威立,王顺金 2004 53 2336]
[12] Peter E, Senellart P, Martrou D, Lemaitre A, Hours J, Ge’rard J M, Bloch1 J 2005 Phys. Rev. Letts. 95 067401
[13] Kartik Srinivasan, Oskar Painter 2007 Phys. Rev. A 75 023814
[14] Bai J X, Mi XW, Li D J 2010 Acta Phys. Sin. 59 6205(in Chinese) [柏江湘,米贤武,李德俊 2010 59 6205
[15] Likharev K 1987 IEEE Trans. Magn. 23 1142
[16] Fulton T A, Dolan G J 1987 Phys. Rev. Lett. 59 109
[17] Laakso M A, Heikkilä T T, Nazarov Y V 2010 Phys. Rev. B 82 205316
[18] Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Su Z, Guo G C, Jiang H W, Guo G P 2010 Appl. Phys. Lett. 97 262113
[19] Stampfer C, Schurtenberger E, Molitor F, Guettinger J, Ihn T, Ensslin K 2008 Nano. Lett. 8 2378
[20] David M, Kuo T 2006 Phys. Rev. B 73 155331
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