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在ECR等离子体装置上进行了磁电加热研究,利用离子灵敏探针(ISP)测量了磁电加热前后离子温度的变化,研究了电极环偏压、磁场强度、气压等参数对磁电加热过程以及加热效率的影响.结果表明:等离子体的整体加热是通过离子在电极环鞘层中的磁电加热及被加热的离子沿径向的输运来完成的.轴心处离子温度随电极环偏压的升高呈非线性增加.磁电加热效率随偏压的增大而增大,在电极环偏压为1000 V时,磁电加热效率为2%2.5%,ECR等离子体中的离子温度能够提高20 eV以上.磁场强度在磁电加热过程中对离子的限制和加热起到重要作用,当磁场强度在6.310-28.710-2T之间变化时,磁电加热的效率随磁场强度的增大而增大.气压在0.020.8 Pa范围内,磁电加热的效率随气压的减小而增大.The magnetoelectric heating is investigated on an ECR plasma device. The ion temperatures are measured by ion sensitive probe (ISP) before and after magnetoelectric heating. The influences of bias voltage of electrical ring, magnet field and pressure on ion temperature and the efficiency of ion heating are studied. The results indicate that the whole heating of the plasma is accomplished through the magnetoelectric heating of the ions in the sheath of the electric ring and the radial transport of the heated ions. The ion temperature in the axial area increases with the bias voltage of electric ring, and their relationship is nonlinear. The ion temperature increases more than 20 eV when the bias voltage is 1000 V. A heating efficiency is achieved to be as high as 2%2.5% and increases with the bias voltage increasing. The magnetic field strength plays an important role in the limitation and heating of the ions. The efficiency of the magnetoelectric heating increases with the increase of the magnetic field strength when the magnetic field strength changes from 6.310-2T to 8.710-2T. The efficiency of the magnetoelectric heating increases with the pressure decreasing when the pressure chenges in a range of 0.020.8Pa.
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Keywords:
- ECR plasma /
- magnetoelectric heating /
- ion temperature
[1] Sun J,Wu J D, Zhong X X, Lai B 2000 Chinese Journal of Semiconductors 21 1019 (in Chinese) [孙 剑、吴嘉达、钟晓霞、来 冰 2000 半导体学报 21 1019]
[2] Ning Z Y, Cheng S H 1999 Acta Phys. Sin. 48 1950 (in Chinese) [宁兆元、程珊华 1999 48 1950]
[3] [4] [5] Wang J H, Yuan R Z, Wu Q C 1999 Acta Phys. Sin. 48 955 (in Chinese) [汪建华、袁润章、邬钦崇 1999 48 955]
[6] [7] Yang W B, Wang J L, Zhang G L, Fan S H, Liu C Z, Yang S Z 2003 Chin. Phys. 12 1257
[8] Joyce G, Lampe M, Fernsler R F 2000 Plasma Sources Sci. Technol. 9 429
[9] [10] [11] Wilhelm R 1989 Fusion Engineering and Design 11 167
[12] [13] Roth J R, Gerdin G A, Richard W. Richardson 1976 IEEE Transactions on Plasma Science PS -4 166
[14] Ezumi N, Masuzaki S, Ohno N, Usugi Y, Takamura S 2003 Journal of Nuclear Materials 313-316 696
[15] [16] [17] Sekine T, Saito T, Tatematsu Y, Yasuoka T, Ikegami H, Nagai D 2004 Review of Scientific Instruments 75 4317
[18] [19] da Silva R P, Nascimento I C, da Cruz D F, Jr 1986 Rev. Sci. Instrum 57 2205
[20] [21] Shen W L, Ma Z B, Tan B S 2010 Journal of Wuhan Institute of Technology 32 53 (in Chinese) [沈武林、马志斌、谭必松 2010 武汉工程大学学报 32 53]
[22] [23] Deli Tang, Paul K C 2003 Journal of Applied Physics 93 5883
[24] Rose D J, Clark M, Jr. 1961 Plasmas and Controlled Fusion (Volume 1) (New York: The M.I.T. Press) p161
[25] [26] [27] Roth J R 1973 IEEE Trans. on Plasma Sci. 1 34
[28] Roth J R, Gerdin G A 1976 Plasma Physics 19 423
[29] [30] Roth J R 1995 Industrial Plasma Engineering (Volume 1) (Knoxville: Taylor Francis) p137
[31] -
[1] Sun J,Wu J D, Zhong X X, Lai B 2000 Chinese Journal of Semiconductors 21 1019 (in Chinese) [孙 剑、吴嘉达、钟晓霞、来 冰 2000 半导体学报 21 1019]
[2] Ning Z Y, Cheng S H 1999 Acta Phys. Sin. 48 1950 (in Chinese) [宁兆元、程珊华 1999 48 1950]
[3] [4] [5] Wang J H, Yuan R Z, Wu Q C 1999 Acta Phys. Sin. 48 955 (in Chinese) [汪建华、袁润章、邬钦崇 1999 48 955]
[6] [7] Yang W B, Wang J L, Zhang G L, Fan S H, Liu C Z, Yang S Z 2003 Chin. Phys. 12 1257
[8] Joyce G, Lampe M, Fernsler R F 2000 Plasma Sources Sci. Technol. 9 429
[9] [10] [11] Wilhelm R 1989 Fusion Engineering and Design 11 167
[12] [13] Roth J R, Gerdin G A, Richard W. Richardson 1976 IEEE Transactions on Plasma Science PS -4 166
[14] Ezumi N, Masuzaki S, Ohno N, Usugi Y, Takamura S 2003 Journal of Nuclear Materials 313-316 696
[15] [16] [17] Sekine T, Saito T, Tatematsu Y, Yasuoka T, Ikegami H, Nagai D 2004 Review of Scientific Instruments 75 4317
[18] [19] da Silva R P, Nascimento I C, da Cruz D F, Jr 1986 Rev. Sci. Instrum 57 2205
[20] [21] Shen W L, Ma Z B, Tan B S 2010 Journal of Wuhan Institute of Technology 32 53 (in Chinese) [沈武林、马志斌、谭必松 2010 武汉工程大学学报 32 53]
[22] [23] Deli Tang, Paul K C 2003 Journal of Applied Physics 93 5883
[24] Rose D J, Clark M, Jr. 1961 Plasmas and Controlled Fusion (Volume 1) (New York: The M.I.T. Press) p161
[25] [26] [27] Roth J R 1973 IEEE Trans. on Plasma Sci. 1 34
[28] Roth J R, Gerdin G A 1976 Plasma Physics 19 423
[29] [30] Roth J R 1995 Industrial Plasma Engineering (Volume 1) (Knoxville: Taylor Francis) p137
[31]
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