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The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.
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Keywords:
- Coulomb oscillations /
- single electron effect /
- silicon nanowire
[1] Manoharan M, Oda S, Mizuta H 2008 Appl. Phys. Lett. 93 112107
[2] Yan W X, Zhao Y P, Wen Y B, Li X P, Xu L P, Gong J P 2010 Chin. Phys. B 19 027302
[3] Wu F, Wang T H 2003 Acta Phys. Sin. 52 696 (in Chinese) [吴 凡、王太宏 2003 52 696]
[4] Liu K, Ding H L, Zhang X G, Yu L W, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 7052 (in Chinese) [刘 奎、丁宏林、张贤高、余林蔚、黄信凡、陈坤基 2008 57 7052]
[5] van der Wiel W G, de Franceschi S, Elzerman J M, Fujisawa T, Tarucha S, Kouwenhoven L P 2003 Rev. Mod. Phys. 75 1
[6] Gorman J, Hasko D G, Williams D A 2005 Phys. Rev. Lett. 95 090502
[7] Durrani Zahid A K 2003 Physica E 17 572
[8] Wang T H, Li H W, Zhou J M 2001 Chin. Phys. 10 844
[9] Fu Y, Willander M, Dutta A, Oda S 2000 Superlattices and Microstructures 28 189
[10] Takahashi Y, Namatsu H, Kurihara K, Iwadate K, Nagase M, Murase K 1996 IEEE Trans. Electron Dev. 43 1213
[11] Tilkea A T, Simmelb F C, Blickc R H, Lorenzc H, Kotthausb J P 2001 Progress in Quantum Electronics 25 97
[12] Hu S F, Wong W Z, Liu S S, Wu Y C, Sung C L, Huang T Y, Yang T J 2002 Adv. Mater. 14 736
[13] Zhang X G, Chen K J, Fang Z H, Liu K, Cao C H, Kang L, Xu L 2008 Chin. Patent 200810020317.6
[14] Liu K T, Fujiwara A, Takahashi Y, Murase K, Horikoshi Y 2002 Jpn. J. Appl. Phys. 41 458
[15] Evans G J, Mizut H, Ahmed H 2001 Jpn. J. Appl. Phys. 40 5837
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[1] Manoharan M, Oda S, Mizuta H 2008 Appl. Phys. Lett. 93 112107
[2] Yan W X, Zhao Y P, Wen Y B, Li X P, Xu L P, Gong J P 2010 Chin. Phys. B 19 027302
[3] Wu F, Wang T H 2003 Acta Phys. Sin. 52 696 (in Chinese) [吴 凡、王太宏 2003 52 696]
[4] Liu K, Ding H L, Zhang X G, Yu L W, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 7052 (in Chinese) [刘 奎、丁宏林、张贤高、余林蔚、黄信凡、陈坤基 2008 57 7052]
[5] van der Wiel W G, de Franceschi S, Elzerman J M, Fujisawa T, Tarucha S, Kouwenhoven L P 2003 Rev. Mod. Phys. 75 1
[6] Gorman J, Hasko D G, Williams D A 2005 Phys. Rev. Lett. 95 090502
[7] Durrani Zahid A K 2003 Physica E 17 572
[8] Wang T H, Li H W, Zhou J M 2001 Chin. Phys. 10 844
[9] Fu Y, Willander M, Dutta A, Oda S 2000 Superlattices and Microstructures 28 189
[10] Takahashi Y, Namatsu H, Kurihara K, Iwadate K, Nagase M, Murase K 1996 IEEE Trans. Electron Dev. 43 1213
[11] Tilkea A T, Simmelb F C, Blickc R H, Lorenzc H, Kotthausb J P 2001 Progress in Quantum Electronics 25 97
[12] Hu S F, Wong W Z, Liu S S, Wu Y C, Sung C L, Huang T Y, Yang T J 2002 Adv. Mater. 14 736
[13] Zhang X G, Chen K J, Fang Z H, Liu K, Cao C H, Kang L, Xu L 2008 Chin. Patent 200810020317.6
[14] Liu K T, Fujiwara A, Takahashi Y, Murase K, Horikoshi Y 2002 Jpn. J. Appl. Phys. 41 458
[15] Evans G J, Mizut H, Ahmed H 2001 Jpn. J. Appl. Phys. 40 5837
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