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基于典型非线性ZnO陶瓷(ZnO压敏电阻)的显微形貌,提出了一个直观、简单、定量描述ZnO压敏电阻性能的导电模型。根据此模型,低偏压下,电子主要以热电子发射机理通过SIS异质结和SS均质结(并联);在击穿电压以上,SS均质结是导电活性结,此时,反偏向的势垒层由耗尽层变为强反型层,势垒顶部变薄,使隧穿电子流随增,因而产生非线性导电;高偏压下,导电是受ZnO颗粒的阻值所控制。Based on microstrueture image of typical nonliear ZnO ceramics (ZnO varistors), an intuitive and simple physical model of conduction has been proposed, that can quantitatively discribe the characteristics of ZaO varistors. According to this mode], in low bias voltage, electrons pass through SIS heterojunction and SS homojuction (in parallel) mainly by thernionic emission. Above breakdown voltage, SS homojuction is active juction of conduction. In this case, the reverse-biased barrier layer is transformed from depletion layer to strong inversion layer. The thickness of barrier top becomes thinner, and tunnelling electron flux rises sharply. Hence the nonliear conduction is produced. In high bias voltage, conduction is limited by grain resistivity.
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