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中国物理学会期刊

氮化铁薄膜晶相合成热分析及其磁性

Thermal analysis on crystal phase synthesis of iron nitride film and its magnetic properties

CSTR: 32037.14.aps.68.20182195
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  • 研究Fe-N体系晶相转变(相变)规律对于高效合成高自旋极化率的γ'-Fe4N薄膜材料非常重要. 利用同步热分析(TG-DSC)研究了氮化铁薄膜的相变规律. TG-DSC的结果显示, 在10 ℃/min的升温速率下, γ''-FeN薄膜在常温到800 ℃之间共有5次相变, 分别为I, γ''-FeN→ξ-Fe2N; II, ξ-Fe2N→ε-Fe3N; III, ε-Fe3N→γ'-Fe4N; IV, γ'-Fe4N→γ-Fe; 以及V, γ-Fe→α-Fe. 利用真空退火技术有效调控了氮化铁薄膜的晶相. X-射线衍射测试结果显示, 直接在纯氮气中溅射得到的氮化铁薄膜是单相的γ''-FeN, 经350, 380和430 ℃退火可分别获得单相的ξ-Fe2N, ε-Fe3N和γ'-Fe4N. 研究了氮化铁薄膜的磁学性能. 振动样品磁强计测试结果显示, γ'-Fe4N薄膜在面内/面外表现出明显的磁各向异性, 属于典型的磁形状各向异性.

     

    The phase transition law of Fe-N system is very important for efficiently synthesizing single-phase γ'-Fe4N thin films. The γ"-FeN thin films are deposited on silicon wafers via DC reactive magnetron sputtering; some of them are stripped from the silicon wafers and measured by using the synchronous thermal analysis (TG-DSC) for studying the phase transition law of Fe-N system. The results of TG-DSC show that at a heating rate of 10 ℃/min, the Fe-N system has five phase transitions in a temperature range between room temperature (RT) and 800 ℃, i.e. I (330−415 ℃): γ''-FeN→ξ-Fe2N with an endothermic value of 133.8 J/g; II (415−490 ℃): ξ-Fe2N→ε-Fe3N with no obvious latent heat of phase change; III (510−562 ℃): ε-Fe3N→γ'-Fe4N with an exotherm value of 29.3 J/g; IV (590−636 ℃): γ'-Fe4N→γ-Fe with an exotherm value of 42.6 J/g; V (636−690 ℃): γ-Fe→α-Fe with an endothermic value of 14.4 J/g. According to the phase transition law of Fe-N system, the crystal phase of iron nitride thin film is effectively regulated by vacuum annealing. The x-ray diffraction pattern (XRD) results show that the iron nitride thin film obtained by direct-sputtering in pure N2 is a single-phase γ"-FeN film, and it becomes a single-phase ξ-Fe2N film after being annealed at 350 ℃ for 2 h, a single-phase ε-Fe3N film after being annealed at 380 ℃ for 2 h, and a single-phase γ'-Fe4N film after being annealed at 430 ℃ for 7 h. The annealing temperature for the phase transition of Fe-N thin film is generally lower than that predicted by the TG-DSC experimental results, because it is affected by the annealing time too, that is, prolonging the annealing time at a lower temperature is also effective for regulating the crystal phase of Fe-N thin film. The magnetic properties of the Fe-N thin film are also studied via vibrating sample magnetometer (VSM) at room temperature. The γ'-Fe4N polycrystalline thin film shows an easy-magnetized hysteresis loop for the isotropic in-plane one, but a hard-magnetized hysteresis loop with a large demagnetizing field for the out-of-plane one, which belongs to the typical magnetic shape anisotropy. However, their saturation magnetizations are really the same (about 950 emu/cm3) both in the plane and out of the plane.

     

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