面向集成电压调节器的甚高频磁芯薄膜材料

彭川; 何禹含; 白飞明

doi:10.7498/aps.75.20251372

摘要

随着三维异构集成技术的兴起与大规模应用, 电感型集成电压调节器在移动终端及高算力设备中的重要性日益凸显, 同时也为高频软磁薄膜材料带来了重要的发展机遇. 本文基于片上薄膜功率电感的应用需求, 首先梳理了坡莫合金、Co基非晶金属薄膜以及FeCo基纳米复合颗粒膜三类磁芯膜材料的优势与局限性, 重点探讨了微米级厚度叠层磁芯膜所面临的技术要求与挑战. 其次, 几乎所有的片上电感都工作在难轴激发模式, 即电感激发磁场的方向与磁芯膜的难磁化方向平行. 本文对比了两种制备大面积均匀单轴各向异性磁芯膜的工艺方法、各自特点及对静态和高频软磁性能的影响, 并且分析了图形化对于磁芯膜磁畴结构、高频磁损耗的作用机制以及相应的优化策略. 随后, 从工艺兼容与长期服役两个维度, 探讨了磁芯膜磁导率与各向异性的温度稳定性问题. 尽管三类磁芯膜的居里温度和晶化温度较高, 但是实际制程温度的上限会受到热对于磁性原子对取向、微观结构缺陷和晶粒尺寸的影响. 最后, 针对当前高频、大信号条件下磁芯膜磁损耗测试中存在的瓶颈问题进行了总结, 并展望了为满足片上功率电感对更高饱和电流和更低磁损耗需求, 未来磁芯膜发展的技术路径.

关键词:

Abstract

With the rise and widespread applications of three-dimensional (3D) heterogeneous integration technology, inductive voltage regulators are becoming increasingly important for mobile terminals and high-computing-power devices, while also offering significant development opportunities for high-frequency soft magnetic films. According to the requirements of on-chip power inductors, we first review the advantages and limitations of three types of magnetic core films: permalloy, Co-based amorphous metal films, and FeCo-based nanogranular composite films, with a focus on the technical requirements and challenges of several μm-thick laminated magnetic core films. Secondly, almost all on-chip inductors are hard-axis excited, which means that the magnetic ﬁeld of inductors should be parallel to the hard axis of the magnetic core. We thus compare the characteristics of two methods of preparing large-area films, i.e. applying an in-situ magnetic field and oblique sputtering, both of which can effectively induce in-plane uniaxial magnetic anisotropy (IPUMA). Their influences on the static and high-frequency soft magnetic properties are also compared. The influences of film patterning on the domain structures and high-frequency magnetic losses of magnetic cores, as well as corresponding countermeasures, are also briefly analyzed. Furthermore, the temperature stability of magnetic permeability and anisotropy of magnetic core films is discussed from the perspectives of process compatibility and long-term reliability. Although the Curie temperatures and crystallization temperatures of the three types of magnetic core films are relatively high, the upper limits of their actual process temperatures are affected by the thermal effects on the alignment of magnetic atomic pairs, microstructural defects, and grain size. Finally, the current bottlenecks in testing high-frequency and large-signal magnetic losses of magnetic core films are discussed, and potential technical approaches to achieving magnetic core films that meet the future demands of on-chip power inductors for higher saturation current and lower magnetic losses are outlined.

Keywords:

作者及机构信息

1.
电子科技大学电子科学与工程学院, 成都　610054

2.
电子科技大学, 电子薄膜与集成器件全国重点实验室, 成都　610054

通信作者: 白飞明, fmbai@uestc.edu.cn

基金项目: 国家自然科学基金(批准号: 61871081)和华为技术公司资助的课题.

Authors and contacts

1.
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

2.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Corresponding author: BAI Feiming, fmbai@uestc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61871081) and Huawei Technologies Co., Ltd., China.

文章全文

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施引文献

图 1 (a) Intel螺旋型磁芯电感和截面SEM^[19,20]; (b) Ferric螺线管型磁芯电感和截面示意图^[22,23]

Fig. 1. (a) Spiral-type magnetic core inductor inductor and its cross-section SEM image from Intel^[19,20]; (b) solenoid-type magnetic core inductor inductor and its cross section diagram from Ferric ^[22,23].

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图 2 (a) 软磁材料的发展历程^[25], 包含硅钢片、坡莫合金、软磁铁氧体、Fe(Co)基非晶、纳米晶和复合磁粉芯; (b) 不同软磁材料在1 kHz下的性能对比^[29]; (c) 不同软磁材料在100 kHz功率损耗^[30]; (d) 横电东磁DMR 52 W锰锌铁氧体在不同频率下的功率损耗

Fig. 2. (a) Development history of soft magnetic materials^[25], including silicon steel sheets, Permalloy, soft magnetic ferrites, Fe(Co)-based amorphous, nanocrystalline and composite magnetic powder cores; (b) performance comparison of different soft magnetic materials at 1 kHz^[29]; (c) power losses of different soft magnetic materials at 100 kHz^[30]; (d) power losses of Heng Dian Group Dmegc Magnetics Co., Ltd. DMR 52 W MnZn ferrite at different frequencies.

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图 3 Co-Ni-Fe三元相图^[47,48]　(a) 低H_c区域; (b) 高饱和磁感应强度区域; (c) 低饱和磁致伸缩系数区域

Fig. 3. Co-Ni-Fe ternary phase diagram^[47,48]: (a) Region of low coercivity; (b) region of high saturation magnetic flux density; (c) region of low saturation magnetostriction coefficient.

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图 4 面内单轴各向异性[Ni₈₁Fe₁₉(120 nm)/SiO₂(20 nm)]₃₀的M-H曲线(a)及复数磁导率(b)^[16]; 面内单轴各向异性[Ni₄₅Fe₅₅(140 nm)/SiO₂(20 nm)]₂₅的M-H曲线(c)及复数磁导率(d)^[17]

Fig. 4. (a) M-H loop and (b) complex permeability of the in-plane uniaxial anisotropic [Ni₈₁Fe₁₉(120 nm)/SiO₂(20 nm)]₃₀ multilayer^[16]; M-H loop (c) and complex permeability (d) of the in-plane uniaxial anisotropic [Ni₄₅Fe₅₅(140 nm)/SiO₂(20 nm)]₂₅ multilayer^[17].

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图 5 (a) 200 nm CoZrTa单层膜沿易轴和难轴的M-H曲线; (b) Ta/[CZT/SiO₂]₂₀多层膜的截面SEM照片^[52]

Fig. 5. (a) M-H curves along the easy and hard axes of a 200 nm-thick CoZrTa single-layer film; (b) cross-sectional SEM image of the Ta/[CZT/SiO₂]₂₀ multilayer film^[52].

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图 6 (a) FeCoTiO薄膜的4πM_s以及ρ随x的变化; (b) 薄膜ρ随温度的变化; (c) 实测Fe-Al-O纳米颗粒膜的σ随Fe体积含量ϕ的变化^[57]; (d) Fe-Co-Ti-O纳米复合颗粒膜的TEM照片^[54]

Fig. 6. (a) 4πM_s and ρ of the thin film as a function of x; (b) variation of the film ρ with temperature; (c) variation of σ with Fe volume fraction (ϕ) in experimentally measured Fe-Al-O nanogranular films^[57]; (d) TEM image of Fe-Co-Ti-O nanocomposite granular films^[54].

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图 7 不同外加诱导场下沉积的FeCoTiO磁膜的M-H曲线和低场FMR虚部磁导率磁谱　(a), (d) 15 Oe; (b), (e) 70 Oe; (c), (f) 115 Oe

Fig. 7. M-H loops and imaginary permeability spectra of FeCoTiO magnetic films deposited under different externally applied bias magnetic fields: (a), (d) 15 Oe; (b), (e) 70 Oe; (c), (f) 115 Oe.

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图 8 不同倾斜角度β溅射沉积的FeCoTiO磁膜的M-H曲线　(a) 10°; (b) 17°; (c) 32°. 不同倾斜角度β溅射沉积的FeCoTiO磁膜低场FMR虚部磁导率测试曲线　(d) 10°; (e) 17°; (f) 32°

Fig. 8. M-H loops of FeCoTiO magnetic films sputter-deposited at different oblique angles β: (a) 10°; (b) 17°; (c) 32°. Low-field FMR spectra of the imaginary part permeability for FeCoTiO magnetic films sputter-deposited at different tilt angles β: (d) 10°; (e) 17°; (f) 32°.

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图 9 FeCoTiO磁膜不同诱导磁场(a)与不同倾斜角度(b)下沉积形成磁膜的$ f_{\text{r}}^{2} $-H_bias曲线; 不同诱导磁场(c)下与不同倾斜角度(d)下沉积磁膜的Δf-H_bias曲线

Fig. 9. Comparison of $ f_{\text{r}}^{2} $-H_bias curves for magnetic films deposited under different inducing magnetic fields (a) and at different oblique angles (b); Δf-H_bias curves for magnetic films deposited under different inducing magnetic fields (c) and at different tilt angles (d).

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图 10 (a) 115 Oe磁场诱导与17°倾斜角下沉积的FeCo-Ti-O磁膜的高频磁损耗; (b)不同尺寸的[FeCoSiB(100 nm)/NiFe(5 nm)]₃的高频磁损耗^[78]

Fig. 10. (a) High-frequency magnetic losses of FeCo-Ti-O films deposited under an in-situ 115 Oe field and by oblique sputtering at a tilt angle of 17°; (b) high-frequency magnetic losses of pattered [FeCoSiB(100 nm)/NiFe(5 nm)]₃ films with different lateral dimensions^[78].

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图 11 磁场从+5 mT降为0后拍摄的不同尺寸图形化FeCoSiB薄膜的Moke照片　(a)—(c) 没有NiFe插层; (d)—(f) 每隔100 nm插入5 nm NiFe层^[78]

Fig. 11. Moke images of patterned FeCoSiB films after decreasing in-plane magnetic field from +5 mT to 0 with different lateral sizes: (a)–(c) Without NiFe intercalated layer; (d)–(f) with 5 nm NiFe intercalated layer every 100 nm^[78].

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图 12 不同厚度的图形化FeCoSiB薄膜的Moke照片　(a)—(e) 50 nm; (f)—(j) 300 nm. 样品首先沿负磁场方向饱和, 然后降场, 磁矩方向沿箭头方向所示^[79]

Fig. 12. Moke images of patterned FeCoSiB films with different thicknesses: (a)–(e) 50 nm; (f)–(j) 300 nm. The magnetic states are approached from saturation by a magnetic ﬁeld in negative direction, the magnetization directions are indicated by arrows in the images^[79]

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图 13 (a) 成分梯度溅射示意图; (b) 不同温度下测得FeCoTa, FeCoZr, FeCoHf和FeCoLu的虚部磁导率磁谱^[83]

Fig. 13. (a) Sketch of gradient-composition sputtering system; (b) imaginary permeability spectra of FeCoTa film, FeCoZr film, FeCoHf film, and FeCoLu film measured at different temperatures^[83].

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图 14 (a) FeCoHfO薄膜的诱导各向异性场和难轴矫顽力随退火温度的变化情况; (b) 不同温度退火后测得的XRD谱, 图中直线对应CoFe(110)峰^[84]; (c) 300 K(未退火), (d) 373 K, (e) 473 K, (f) 573 K退火后FeCo(体积分数为30.5%)-SiO₂纳米颗粒膜的TEM照片^[85]

Fig. 14. (a) Annealing temperature dependence of the induced anisotropy ﬁeld and hard axis coercivity in the FeCoHfO; (b) XRD patterns for different annealing temperatures, the vertical line indicates the position of the CoFe (110) peak^[84]; TEM micrographs of FeCo (30.5%)–SiO₂ ﬁlm annealed at (c) 300 K (as-deposited ﬁlm), (d) 373 K, (e) 473 K and (f) 573 K^[85].

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表 1 三类磁芯薄膜材料磁参数对比

Table 1. Comparison between magnetic parameters of soft magnetic thin film materials.

	坡莫合金 Ni₈₀Fe₂₀ Ni₄₅Fe₅₅ CoNiFe	非晶磁膜 CoZr CoZrTa(B) CoFeB	纳米颗粒膜 FeCo-X-O(N, F) (X = Si, Al, Hf, Zr, Ti, etc.)
4πM_s/T	1/1.5/2.0	1.5	1.4—2.0
H_k/Oe^a	<10 (25)	<25	50—100
μ_r	~1000 (600)	600	100—400
H_ch/Oe	<1 (2)	<0.5^b	1—2
ρ/(μΩ·cm)	~20 (45)	~100	500—2000
t_thres/nm^c	~100	~160	~500
α_eff	<0.01	<0.01	0.014
注: a 原位磁场诱导各向异性; b 取决于靶材质量; c 出现垂直各向异性的厚度阈值.

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