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中国物理学会期刊

固态色心高压下量子磁探测研究进展

CSTR: 32037.14.aps.75.20251370

Research progress of quantum magnetic sensing of solid-state color centers under high pressure

CSTR: 32037.14.aps.75.20251370
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  • 高压科学已成为探索物质在极端条件下新物态、新现象的核心前沿领域之一. 高压环境中, 磁场、压强等物理量的原位探测, 对揭示物质在极端条件下的行为具有重要意义. 然而, 传统高压磁探测技术普遍面临空间分辨率低、灵敏度差、难以实现原位磁探测等难题. 近年来, 基于金刚石NV色心、碳化硅硅空位/双空位色心及六方氮化硼色心等的固态量子传感器, 所构建的高压量子精密测量技术, 凭借微米级空间分辨率、高灵敏度与优异的原位探测能力, 为高压科学研究提供了创新性技术手段. 本文系统地总结了高压极端条件对上述固态色心光学、自旋性质的影响, 并以磁性材料的高压磁相变探测、超导材料的迈斯纳效应测量为例, 介绍了基于固态色心高压下原位磁探测研究进展. 该综述旨在为未来基于固态色心高压下量子精密测量的发展提供一定的技术路线指引.

     

    High-pressure science has emerged as one of the core frontiers for exploring novel states of matters and phenomena under extreme conditions. In high-pressure environments, the in situ detection of physical quantities such as magnetic fields and pressure is crucial for understanding material behaviors under extreme conditions. However, traditional high-pressure magnetic sensing techniques often face challenges such as low spatial resolution, poor sensitivity, and difficulties in achieving in situ magnetic detection.
    In recent years, quantum sensors based on solid-state color centers, such as nitrogen-vacancy centers in diamond, silicon-vacancy/double-vacancy centers in silicon carbide, and color centers in hexagonal boron nitride, have enabled high-pressure quantum metrology with micrometer-scale spatial resolution, high sensitivity, and superior in situ detection capabilities, offering innovative solutions for high-pressure research.
    This review systematically summarizes the effects of extreme high-pressure conditions on the optical and spin properties of these solid-state defects. Furthermore, taking high-pressure magnetic phase transition studies of magnetic materials and Meissner effect measurements in superconductors for example, we highlight recent advances in in situ magnetic sensing using solid-state color centers under high pressure. This review aims to provide technical guidance for developing high-pressure quantum precision measurement techniques based on solid-state defects in the future.

     

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