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作为新一代的纤锌矿铁电材料，Al1-xScxN具有高的剩余极化强度、理想的矩形电滞回线、与CMOS后道工艺兼容、稳定的铁电相等优点。作为近几年铁电领域的热点材料，国内外科研人员进行了深入研究。本文对Al1-xScxN铁电薄膜的研究进展进行了全面的综述。在Al1-xScxN铁电性的影响因素方面，讨论了Sc含量、衬底类型、沉积条件、薄膜厚度、测试频率及温度等因素对薄膜的作用。在极化翻转机制方面，详细阐述Al1-xScxN电畴特性、翻转动力学、形核位置等微观物理机制。在应用前景上，Al1-xScxN薄膜在铁电随机存储器、铁电场效应管和铁电隧道结等铁电存储器中表现出巨大潜力，为新一代高密度、低功耗铁电存储器及纳米电子器件的发展提供有力支持。
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关键词:
- Al1-xScxN 薄膜 /
- 铁电性 /
- 电畴翻转机制 /
- 铁电存储器
As a new generation of wurtzite-type ferroelectric material, Al1-xScxN exhibits outstanding properties such as high remnant polarization, ideal rectangular hysteresis loops, compatibility with back-end-of-line (BEOL) CMOS processes, and stable ferroelectric phases. In recent years, this material has become a focus in the field of ferroelectrics, attracting extensive research efforts worldwide. This paper provides a comprehensive review of the research progress on Al1-xScxN ferroelectric thin films. Regarding the factors influencing its ferroelectricity, the effects of Sc composition, substrate, deposition conditions, film thickness, testing frequency, and temperature are discussed. In terms of polarization switching mechanisms, the characteristics of ferroelectric domains, switching dynamics, nucleation sites, and fatigue behavior are summarized, offering insights into the underlying physical processes. From an application perspective, Al1-xScxN thin films show great potential in ferroelectric randomaccess memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), providing strong support for the development of next-generation high-density, lowpower ferroelectric memory and nanoelectronic devices.-
Keywords:
- Al1-xScxN film /
- ferroelectricity /
- domain reversal mechanism /
- ferroelectric memory
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