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低温等离子体沉积与刻蚀技术在芯片制造、平板显示器和光伏等等离子体辅助制造领域中具有至关重要的作用。而等离子体与材料之间的物理、化学相互作用机理，是揭示工艺过程本质、优化制程参数、提升器件性能与可靠性的重要科学基础。本工作基于流体混合模型并耦合表面形貌演化模型自洽模拟了不同放电参数下的等离子体放电特性以及沉积/刻蚀表面形貌，并给出了一些研究实例的模拟结果与讨论。在非晶硅薄膜沉积过程研究中发现，等离子体放电过程所产生的电子密度径向分布不均匀，会导致基片表面中性基团和离子通量分布乃至膜厚或膜质的不均匀。其中，离子能量分布还会影响薄膜中各元素的含量和成键情况，进而影响薄膜质量和性能。而在碳氟混合气体放电刻蚀SiO2研究中，发现在裁剪波形的驱动下通过调节电极间距、谐波相位以及谐波次数，可实现对离子与中性基团的灵活控制，从而筛选出更优的放电参数以改善刻蚀效果。在感性耦合氯混合气体刻蚀Si的过程中，采用裁剪偏压波形会使离子能量主要分布在高能区，这能显著提高刻蚀效率。综上，通过混合模拟可以实现等离子体放电与沉积/刻蚀过程的自洽耦合，总结离子与中性基团协同作用的本质规律，为工艺与设备的优化提供参考。
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关键词:
- 等离子体增强化学气相沉积 /
- 等离子体刻蚀 /
- 离子与中性基团协同作用
Low-temperature plasma deposition and etching technologies play a vital role in plasma-assisted manufacturing fields such as semiconductor chip fabrication, flat-panel displays, and photovoltaic devices. The physical and chemical interaction mechanisms between plasma and materials form the fundamental scientific basis for elucidating the nature of process dynamics, optimizing processing parameters, and improving device performance and reliability.
In this work, based on a fluid hybrid model coupled with a surface profile evolution model, the plasma discharge characteristics and the deposition/etching surface profile under different discharge parameters are self-consistently simulated. It also presents the simulation results and discussions of some research cases.
During amorphous silicon thin-film deposition, it was found that the radial distribution of electron density generated during the plasma discharge process is non-uniform, which can lead to the non-uniform distribution of neutral and ion fluxes on the substrate surface, as well as the non-uniformity of film thickness or film quality. Moreover, the ion energy distribution strongly influences the composition and bonding configurations in the film, thereby affecting its quality and performance.
In studies of SiO2 etching using fluorocarbon mixed-gas discharges, it has been found that, under voltage waveform tailoring, adjusting the electrode gap, phase, and harmonic number enables flexible control of ion and neutral fluxes. This allows for the optimization of discharge parameters to improve etching performance. During Si etching with inductively coupled Ar/Cl2 plasmas, the application of tailored bias waveform causes the ion energy to concentrate predominantly in the high-energy range, which can significantly enhance etching efficiency.
In summary, this work systematically investigates that the self-consistent coupling between plasma discharge and deposition/etching processes can be achieved by the hybrid simulation, while further elucidating the essential synergistic roles of ions and neutral radicals. It is hoped that these findings will serve as valuable references for the optimization of plasma processes and equipment.-
Keywords:
- Plasma-enhanced chemical vapor deposition /
- plasma etching /
- the synergistic effect of ions and neutrals
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