A series of Ba_0.94La_0.06SnO₃ thin films are deposited on MgO(001) single crystal substrates by RF magnetron sputtering method, and their structure and electrical transport properties are systematically investigated. All films reveal degenerate semiconductor (metal) characteristics in electrical transport properties. In the high-temperature region (T > T_\min , where T_\min is the temperature at which the resistivity reaches a minimum value), the resistivity of each film increases with temperature, and exhibits a linear relationship with the square of the temperature. In the low-temperature region (T < T_\min ), the resistivity increases with decreasing temperature and varies linearly with \ln T . This temperature dependent behavior of resistivity cannot be explained by the general electron-electron interaction or weak localization effects in homogeneous disordered conductors and nor by Kondo effect. After quantitative analysis, it is found that the \ln T behavior of resistivity at low temperatures can be explained by the electron-electron Coulomb interaction effect in the presence of granularity. In addition, it is found that the Hall coefficient R_\textH also varies linearly with \ln T for the Ba_0.94La_0.06SnO₃ film, which also quantitatively accords with the theoretical prediction of the electron-electron Coulomb interaction effects in the granular metals. The results of cross-section high-resolution transmission electron microscope indicate that although the films have epitaxial structures as a whole, there are many strip-shaped amorphous regions in films, which makes the films have electrical transport properties similar to those of metal granular films. Our results provide strong support for the validity of the theory concerning the effects of Coulomb interaction on the conductivity and Hall coefficient in granular metals.