MoS<sub>2</sub>/MoTe<sub>2</sub>垂直异质结的电荷传输及其调制

温恒迪; 刘跃; 甄良; 李洋; 徐成彦

doi:10.7498/aps.72.20221768

摘要

二维材料异质结器件具有纳米级厚度及范德瓦耳斯接触表面, 因而表现出独特的光电特性. 本文构建了栅压可调的MoS₂/MoTe₂垂直异质结器件, 利用开尔文探针力显微镜(KPFM)技术结合电输运测量, 揭示了MoS₂/MoTe₂异质结分别在黑暗和532 nm激光照射条件下的电荷输运行为, 发现随着栅压的变化异质结表现出从n-n⁺结到p-n结的反双极性特征. 系统地解释了MoS₂/MoTe₂异质结的电荷输运机制, 包括n-n⁺结和p-n结在正偏和反偏下条件下的电荷输运过程、随栅压变化而发生的转变的结区行为、接触势垒对电荷输运的影响、n-n⁺结和p-n结具有不同整流特征的原因、偏压对带间隧穿的重要作用及光生载流子对电学输运行为的影响等. 本文所使用的方法可推广到其他二维异质结体系, 为提高二维半导体器件性能及其应用提供了重要的参考和借鉴.

关键词:

Abstract

The heterojunction device based on two-dimensional materials possesses unique photoelectric properties due to its nanoscale thickness and van der Waals (vdWs) contact surface. In this paper, a gate-voltage-tunable MoS₂/MoTe₂ vertical vdWs heterojunction device is constructed. The Kelvin probe force microscopy (KPFM) technology is combined with the electric transport measurement technology, thereby revealing the charge transport behavior of the MoS₂/MoTe₂ heterojunction under dark condition and laser-irradition condition, including the bipolarity characteristics of the transition from n-n⁺ junction to p-n junction. In this paper, the charge transport mechanism of heterojunction is explained comprehensively and systematically, including the charge transmission process of n-n⁺ junction and p-n junction under positive and negative bias conditions, the transformation of nodule behavior with gate voltage, the influence of barriers on charge transmission, the different rectification characteristics between n-n⁺ junction and p-n junction, the major role of source and leakage bias voltage in band tunneling, and the influence of photogenerated carriers on electrical transmission. The method in this work can be generalized to other two-dimensional heterojunction systems and also provide an important reference for improving the performance of two-dimensional semiconductor devices and their applications in the future.

Keywords:

two-dimensional transition metal chalcogenide heterojunction /
charge transmission mechanism /
energy band structure /
Kelvin probe force microscope

作者及机构信息

1.
哈尔滨工业大学材料科学与工程学院, 哈尔滨　150001

2.
哈尔滨工业大学(深圳), 索维奇智能新材料实验室(诺贝尔奖科学家实验室), 深圳　518055

3.
哈尔滨工业大学, 微系统与微结构制造教育部重点实验室, 哈尔滨　150080

通信作者: 李洋, liyang2018@hit.edu.cn ; 徐成彦, cy_xu@hit.edu.cn

基金项目: 国家自然科学基金(批准号: 51772064, 51902069)、黑龙江省自然科学基金(批准号: YQ2021E019)和深圳市科学技术项目(批准号: RCJC20210706091950025)资助的课题.

Authors and contacts

1.
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

2.
Sauvage Laboratory for Smart Materials, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China

3.
MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China

Corresponding author: Li Yang, liyang2018@hit.edu.cn ; Xu Cheng-Yan, cy_xu@hit.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51772064, 51902069), the Natural Science Foundation of Heilongjiang Province, China (Grant No. YQ2021E019), and the Shenzhen Science and Technology Program, China (Grant No. RCJC20210706091950025).

文章全文

参考文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[2]	Manzeli S, Ovchinnikov D, Pasquier D, Yazyev O V, Kis A 2017 Nat. Rev. Mater. 2 17033 Google Scholar
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施引文献

图 1 MoS₂/MoTe₂异质结器件及其电学性质　(a) MoS₂/MoTe₂异质结器件的示意图; (b) MoS₂/MoTe₂异质结器件的光学图像; (c) MoS₂/MoTe₂异质结的拉曼光谱; (d) MoS₂/MoTe₂异质结的能带结构; (e) MoS₂/MoTe₂异质结器件转移曲线; (f) MoS₂/MoTe₂异质结器件输出曲线

Fig. 1. MoS₂/MoTe₂ heterojunction devices and it’s electrical properties: (a) Diagrammatic sketch of MoS₂/MoTe₂ heterojunction device; (b) optical image of the MoTe₂/MoS₂ heterostructure device; (c) Raman spectra of MoTe₂/MoS₂ heterojunction; (d) band structure of the MoTe₂/MoS₂ heterojunction; (e) transfer curves of MoS₂/MoTe₂ heterojunction device; (f) output curves of MoS₂/MoTe₂ heterojunction device.

下载: 全尺寸图片幻灯片

图 2 MoS₂/MoTe₂异质结器件的电学特性　(a) V_ds = –6 V时不同功率下的转移曲线; (b) V_ds = +6 V时不同功率下的转移曲线; (c) V_g = +40 V时不同功率下的输出曲线; (d) V_g = –10 V时不同功率下的输出曲线; (e) 在V_g$\gg $0和V_g$\ll $0条件下, MoS₂/MoTe₂异质结的能带结构

Fig. 2. Electrical characteristics of MoTe₂/MoS₂ heterojunction device: (a) Power intensity-dependent I_ds-V_g curves, V_ds = –6 V; (b) power intensity-dependent I_ds-V_g curves, V_ds = +6 V; (c) power intensity-dependent I_ds-V_ds curves, V_g = +40 V; (d) power intensity-dependent I_ds-V_ds, V_g = –10 V; (e) band structure of MoTe₂/MoS₂ heterojunction at V_g$\gg $0 and V_g$\ll$0.

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图 3 MoS₂/MoTe₂异质结器件的表面电势分布　(a) KPFM原理示意图; (b) MoS₂/MoTe₂异质结的AFM图像; (c) V_ds = +2 V时异质结器件的表面电势分布; (d) V_ds = –2 V时异质结器件的表面电势分布

Fig. 3. Surface potential distribution of MoS₂/MoTe₂ heterojunction devices: (a) Schematic diagram of KPFM; (b) AFM image of MoS₂/MoTe₂ heterojunction; (c) surface potential distribution of heterojunction device, V_ds = +2 V; (d) surface potential distribution of heterojunction device, V_ds = –2 V.

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图 4 MoTe₂/MoS₂异质结器件的表面电势分布及其物理机理　(a) V_ds = +2 V时的表面电势归一化数据; (b), (c) V_ds＞0时的能带结构; (d) V_ds = –2 V时的表面电势归一化数据; (e), (f) V_ds＜0的能带结构

Fig. 4. Surface potential distribution of vertical MoTe₂/MoS₂ heterojunction device and it’s physical mechanism: (a) Surface potential normalized profiles of heterojunction, V_ds = +2 V; (b), (c) band structure of heterojunction, V_ds＞0; (d) surface potential normalized profiles of heterojunction, V_ds = –2 V; (e), (f) band structure of heterojunction, V_ds＜0.

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图 5 光照前后MoTe₂/MoS₂异质结器件的表面电位分布及机理　(a) V_ds = +2 V; (b) V_ds = –2 V

Fig. 5. Surface potential distribution of MoTe₂/MoS₂ heterojunction device and it’s physical mechanism before and after illumination: (a) V_ds = +2 V; (b) V_ds = –2 V.

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map

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[2]	Manzeli S, Ovchinnikov D, Pasquier D, Yazyev O V, Kis A 2017 Nat. Rev. Mater. 2 17033 Google Scholar
[3]	Li L K, Yu Y J, Ye G J, Ge Q Q, Ou X D, Wu H, Feng D L, Chen X H, Zhang Y B 2014 Nat. Nanotechnol. 9 372 Google Scholar
[4]	Song L, Ci L J, Lu H, Sorokin P B, Jin C H, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I 2010 Nano Lett. 10 3209 Google Scholar
[5]	Jian S K, Jiang Y F, Yao H 2015 Phys. Rev. Lett. 114 237001 Google Scholar
[6]	Lozovoy K A, Izhnin I I, Kokhanenko A P, Dirko V V, Vinarskiy V P, Voitsekhovskii A V, Fitsych O I, Akimenko N Y 2022 Nanomaterials 12 2221 Google Scholar
[7]	Novoselov K S, Mishchenko A, Carvalho A, Neto A H C 2016 Science 353 aac9439 Google Scholar
[8]	Iannaccone G, Bonaccorso F, Colombo L, Fiori G 2018 Nat. Nanotechnol. 13 183 Google Scholar
[9]	Zeng M Q, Xiao Y, Liu J X, Yang K, Fu L 2018 Chem. Rev. 118 6236 Google Scholar
[10]	Chi Z H, Chen X L, Yen F, Peng F, Zhou Y H, Zhu J L, Zhang Y J, Liu X D, Lin C L, Chu SQ 2018 Phys. Rev. Lett. 120 037002 Google Scholar
[11]	Fei Z Y, Zhao W J, Palomaki T A, Sun B S, Miller M K, Zhao Z Y, Yan J Q, Xu X D, Cobden D H 2018 Nature 560 336 Google Scholar
[12]	Bonilla M, Kolekar S, Ma Y J, Diaz H C, Kalappattil V, Das R, Eggers T, Gutierrez H R, Phan M H, Batzill M 2018 Nat. Nanotechnol. 13 289 Google Scholar
[13]	Li T X, Jiang S W, Shen B, Zhang Y, Li L Z, Tao Z, Trithep D, Kenji W, Takashi T, Fu L, Shan J, Kin F M 2022 Nature 600 641 Google Scholar
[14]	Guo H W, Hu Z, Liu Z B, Tian J G 2021 Adv. Funct. Mater. 31 2007810 Google Scholar
[15]	Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042 Google Scholar
[16]	Cheng R, Li D H, Zhou H L, Wang C, Yin A X, Jiang S, Liu Y, Chen Y, Huang Y, Duan X F 2014 Nano Lett. 14 5590 Google Scholar
[17]	Lee C H, Lee G H, van der Zande A M, Chen W C, Li Y L, Han M Y, Cui X, Arefe G, Nuckolls C, Heinz T F, Guo J, Hone J, Kim P 2014 Nat. Nanotechnol. 9 676 Google Scholar
[18]	Zhang K A, Zhang T N, Cheng G H, Li T X, Wang S X, Wei W, Zhou X H, Yu W W, Sun Y, Wang P, Zhang D, Zeng C G, Wang X J, Hu W D, Fan H J, Shen G Z, Chen X, Duan X F, Chang K, Dai N 2016 ACS Nano 10 3852 Google Scholar
[19]	Nowack K C, Spanton E M, Baenninger M, Konig M, Kirtley J R, Kalisky B, Ames C, Leubner P, Brune C, Buhmann H, Molenkamp L W, Goldhaber-Gordon D, Moler K A 2013 Nature 12 787 Google Scholar
[20]	Duong N T, Lee J, Bang S, Park C, Lim S C, Jeong M S 2019 ACS Nano 13 4478 Google Scholar
[21]	Cao G M, Meng P, Chen J G, Liu H S, Bian R J, Zhu C, Liu F C, Liu Z 2021 Adv. Funct. Mater. 31 2005443 Google Scholar
[22]	Nazir G, Kim H, Kim J, Kim K S, Shin D H, Khan M F, Lee D S, Hwang J Y, Hwang C, Suh J, Eom J, Jung S 2018 Nat. Commun. 9 5371 Google Scholar
[23]	Khan S, Khan A, Azadmanjiri J, Roy P K, Děkanovský L, Sofer Z, Numan A 2022 Adv. Photonics Res. 3 2100342 Google Scholar
[24]	Melitz W, Shen J, Kummel AC, Lee S 2011 Surf. Sci. Rep. 66 1 Google Scholar
[25]	Grzeszczyk M, Golasa K, Zinkiewicz M, Nogajewski K, Molas M R, Potemski M, Wysmolek A, Babinski A 2016 2D Mater. 3 025010 Google Scholar
[26]	Golasa K, Grzeszczyk M, Bozek R, Leszczynski P, Wysmolek A, Potemski M, Babinski A 2014 Solid State Commun. 197 53 Google Scholar
[27]	Balaji Y, Smets Q, Szabo A, Mascaro M, Lin D, Asselberghs I, Radu I, Luisier M, Groeseneken G 2020 Adv. Funct. Mater. 30 1905970 Google Scholar

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MoS₂/MoTe₂垂直异质结的电荷传输及其调制