搜索

x
中国物理学会期刊

高阶拓扑绝缘体和高阶拓扑超导体简介

Higher-order topological insulators and superconductors

CSTR: 32037.14.aps.68.20191101
PDF
HTML
导出引用
  • 近期, 高阶拓扑绝缘体和高阶拓扑超导体的概念激发了广泛关注和研究兴趣. 由于新的体-边对应关系, 在同一维度高阶拓扑绝缘体和高阶拓扑超导体的边界态的维度要低于一阶(或称传统)拓扑绝缘体和拓扑超导体的边界态. 本文阐述了高阶拓扑物态和一阶拓扑物态的联系. 具体展示了在同一维度上如何利用对称性的破缺从一阶拓扑物态转变为高阶拓扑物态, 以及如何利用低维的一阶拓扑物态构造高维的高阶拓扑物态; 回顾了高阶拓扑绝缘体和高阶拓扑超导体的研究进展. 通过对近期的研究进展的回顾, 可以看出这一新兴领域虽然研究进展迅速, 但对电子型的高阶拓扑绝缘体和高阶拓扑超导体的性质的理论研究和实验研究均处在非常初级的阶段, 要对这一新兴领域有更深更全面的理解认识还有待更多的研究投入.

     

    Very recently, higher-order topological insulators and superconductors have attracted wide attention and aroused the great interest of researchers. Owing to their unconventional bulk-boundary correspondence, higher-order topological insulators and superconductors possess novel boundary modes whose dimensions are always lower than the first-order (or say conventional) topological insulators and superconductors, provided that their bulk dimensions are the same. The essence of higher-order topological phase is the formation of Dirac-mass domain walls on the gapped one-dimensional lower boundary. Roughly speaking, the origins of the formation can be classified as " intrinsic” and " extrinsic” type. For the former case, the formation of domain walls is forced by symmetry, suggesting that the resulting higher-order topological phases can be taken as topological crystalline phases. For this case, the domain walls are quite robust if the corresponding symmetry is preserved. For the latter case, the domain walls are formed simply because the one-dimensional lower boundary modes are gapped in a nontrivial way, however, the nontrivial way is not forced by symmetry. For this case, the domain walls are also stable against perturbations as long as the separations between them are large enough. The domain walls can have various patterns, which indicates that the higher-order topological phases are very rich.
    In this paper, we first reveal the connection between the higher-order topological phase and the first-order topological phase. Concretely, we show how to realize a higher-order topological phase by breaking some symmetries of a first-order topological phase, as well as stacking lower-dimensional first-order topological systems in an appropriate way. After these, we review the recent progress of theoretical and experimental study of higher-order topological insulators and superconductors. For the higher-order topological insulators, we find that the electronic materials are still laking though a lot of experimental realizations have been achieved. For higher-order topological superconductors, we find that their experimental realization and investigation are still in the very primary stage though quite a lot of relevant theoretical studies have been carried out. In order to comprehensively understand this newly-emerging field there are still many things to be done.

     

    目录

    /

    返回文章
    返回
    Baidu
    map