Indium oxide (In ₂O ₃) thin films and thin-film transistors (TFTs) based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature (200 ℃) for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In ₂O ₃thin films are investigated, and they are compared with those of conventional thermal annealing (300 ℃, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In ₂O ₃thin film and the performance of TFT in a short period. The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In ₂O ₃film is denser and flatter than that of the conventional thermally annealed film, and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In ₂O ₃film. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In ₂O ₃TFTs is investigated in a comparative way. The results show that the electrical characteristics of the device are significantly improved: the subthreshold swing decreases to 0.12 mV/dec, the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×10 ⁷, and the field effect mobility is enhanced to 1.27 cm ²·V ^–1·s ^–1. Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performances of In ₂O ₃thin film and TFTs, even under low-temperature conditions.