搜索

x
中国物理学会期刊

Zn1-xTMxO (TM=Al, Ga, In)导电性能的模拟计算

CSTR: 32037.14.aps.62.157102

Simulation and calculation of conducting property of Zn1-xTMxO (TM=Al, Ga, In)

CSTR: 32037.14.aps.62.157102
PDF
导出引用
  • 基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 构建了未掺杂与相同掺杂浓度的Zn1-xTMxO (TM=Al, Ga, In) 超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明, 分别高掺杂 (Al, Ga, In) 相同原子分数3.125 at%的条件下, In掺杂对ZnO导电性能最好的结果, 计算结果和实验结果相一致.

     

    Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models for the unit cell of pure ZnO and Zn1-xTMxO (TM=Al, Ga, In) supercells at the same doping concentration were constructed, and the geometry optimization, total density of states, band structures for all models were carried out. The calculation results show that, In-doped ZnO has the best conductivity at the same doping concentration of 3.125 at% of (Al, Ga, In) high doped in ZnO, the calculation results agree with the experimental results.

     

    目录

    /

    返回文章
    返回
    Baidu
    map