Nitrogen is one of the most commonly-observed impurities in diamond, and affects the luminescence of these defects greatly. The complexes could be obtained from the nitrogen atom trapping the native defects such as self-interstitials, vacancies. In this study, a high-pressure and high-temperature synthesized nitrogen-doped diamond was characterized by cathode luminescence (CL) image, and the results showed that the blue region of this sample is the 100 growth sector. The 100 sector was then electron-irradiated in transmission electron microscope (TEM) and subsequently annealed at high temperatures so as to introduce the native defects to further form the nitrogen-containing complexes. All the optical properties of these defects in diamond were investigated by the low temperature photoluminescence (PL) spectra. The PL of 100 sector dominated the strong luminescence of nitrogen-vacancy (NV) complexes together with a weak 503 nm signal.