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中国物理学会期刊

AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

CSTR: 32037.14.aps.61.027103

Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells

CSTR: 32037.14.aps.61.027103
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  • 首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(1,2)和子带间自旋-轨道耦合系数12. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的1,2和12, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数12比Rashba自旋劈裂系数1,2小, 但基本在同一数量级.

     

    Rashba spin splitting coefficients for the first two subbands1,2 and intersubband spin-orbit coupling coefficient 12 are obtained by projecting the characteristic equation into the subspace of conduction band. Then Schrdinger and the Poisson equations are solved self-consistently to calculate1,2 and 12 under different gate voltages. Then contributions to the spin-orbit coupling coefficients from the well, the left and the right heterointerfaces and the left and the right barriers of the quantum well are discussed. Resulsts show that the spin-orbit coupling coefficient can be modulated by the gate voltage, and the intersubband spin-orbit coupling coefficients calculated here are a little smaller than the Rashba coefficients1,2, but they are basically of the same order.

     

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