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中国物理学会期刊

单电子在含有双能级原子的空腔中的输运行为

CSTR: 32037.14.aps.61.020301

Single electron transport in a cavity containing a two-level atom

CSTR: 32037.14.aps.61.020301
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  • 本文构造了一个含有双能级原子的空腔系统,用来模拟一个含有双能级量子点的微腔系统, 并研究其对电子输运行为的影响.通过对该系统输运方程的求解,给出了系统输运系数的具体表达式,然后通过调整空腔及原子的本征特性以及两者的耦合性质,研究了电子在腔体中的输运行为对腔体本征属性的依赖关系. 这些结果可以为如何操控电子在微观结构器件中的输运特性提供一定的理论支持.

     

    Quantum dot is a typical nano functional device, which has a very attractive prospect in biotechnology, semiconductor technology, quantum optics and other fields. In this paper, we construct a cavity containing a two-level atom to simulate a nano cavity coupling a two-level quantum dot, and study the electrical transmission in the cavity. We solve the transfer function of a single electron and obtain the formulas of transportation and reflection. By adjusting the intrinsic properties of the cavity and the atom and coupling between them, we study the transmission characteristics of a single electron in the cavity and understand the role of the two-level atom and the cavity in the electrical transport. The results can provide some theoretical support for quantum control of the electron transport in a nano device.

     

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