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中国物理学会期刊

CuI/Al双层电极的有机场效应晶体管

CSTR: 32037.14.aps.60.127304

Organic field-effect transistor with low-cost CuI/Al bilayer electrode

CSTR: 32037.14.aps.60.127304
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  • 制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.

     

    An organic field-effect transistor based on pentacene semiconductor with CuI/Al bilayer electrode is investigated. The CuI layer, directly contacting the organic semiconductor layer, serves as the hole-injection layer. The overcoated metal layer is responsible for the reduction in contact barrier. Compared with the device with a single metal (Al, Au) layer used as the source-drain electrode, the device with CuI/Al electrodes considerably improves the hole mobility and the on/off current ratio and greatly reduces the threshold voltage. Results of X-ray photoelectron and ultraviolet/visible absorption studies reveal that the reduction in the contact barrier can be attributed to an electron transfer from pentacene and Al to CuI.

     

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