Based on density functional theory calculations, the electronic properties of N-doped BaSnO3 and N and Sb codoping are investigated. It is found that codoping with N acceptors and Nb donors in a ratio of 2 ∶1 is suitable for the fabrication of low-resistivity p-type BaSnO3. Our results indicate that codoping with N acceptors and Nb donors is a prospective candidate as a p-type transparent conductive material.