In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector(ODR) has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED's luminous flux, the efficiency and the color purity are improved by 6.04%, 5.74%, 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED.