Based on the structure of cellular neural network, multi-scroll Chua’s circuit is implemented by the nanoelectronic device of hybrid single electron transistor and metal oxide semiconductor (SETMOS) structure with its negative differential resistance characteristic. The basic dynamical properties, including phase portrait, bifurcation diagram, Lyapunov exponent spectrum, Poincaré mapping and power spectrum are studied by theoretic analysis and numerical simulation. The validity and the feasibility of three-order Chua’s circuit with four scrolls are further confirmed by the circuit simulation experiment. Finally, the results show that the negative differential resistance characteristic of SETMOS determines complex dynamical behaviors of multi-scroll Chua’s circuit. Also, the designed circuit has simple structure and is easy to realize.