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利用sol-gel法在Pt/Ti/SiO2/Si衬底上制备出Bi0.85Nd0.15FeO3薄膜.研究退火温度对其晶相形成的影响,发现在450 ℃退火时,Bi0.85Nd0.15FeO3晶相开始形成,但是结晶较差,而且存在杂相;在500—600 ℃退火可以获得单相Bi0.85Nd0.15FeO3薄膜,退火温度升高有利于其结晶.对600 ℃退火的Bi0.85Nd0.15FeO3薄膜的介电、铁电和电磁性能进行了测试.在测试频率为1 MHz时,其介电常数和介电损耗分别为145,0.032;饱和磁化强度大约为44.8 emu/cm3;剩余极化值(2Pr)大约是16.6 μC/cm2.
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关键词:
- sol-gel法 /
- Bi0.85Nd0.15FeO3薄膜 /
- 铁电性能 /
- 铁磁性能
The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method.The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450 ℃. The single-phase Bi0.85Nd0.15FeO3 films were obtained,when they were annealed at 500—600 ℃. Bi0.85Nd0.15FeO3 films annealed at 600 ℃ had saturated magnetization about 44.8 emu/cm3, remnant polarization (2Pr) about 16.6 μC/cm2,dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.-
Keywords:
- sol-gel method /
- Bi0.85Nd0.15FeO3 thin film /
- dielectric properties /
- ferroelectric properties
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中国物理学会期刊
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