The p-i-n type μc-Si:H solar cells were prepared in a single chamber using very high frequency plasma enhanced chemical vapor deposition technique. Boron cross-contamination between p-layer and subsequent i-layer seriously affects the device performance. The effects of p-seeding on the μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated.The p-seeding method was mainly realized by relatively high hydrogen rich plasma. It has been demonstrated that p-seeding can improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer and reduce boron contamination. Through the optimization of p-seeding layer technique, a-Si:H/μc-Si:H tandem solar cell with 881% （1 cm2） conversion efficiency has been fabricated in single chamber.