Nonv-electrical plating was employed to form nickel inducing source on the surface of α-Si thin film deposited by VHF-PECVD. It was observed that the nickel inducing source formed by this method appeared as “dots” uniformly distributed on the surface of a-Si thin film after annealed for several hours at 550℃. The quantity of “dot” on the a-Si was determined by Ni concentration in the solution, the PH value, and the plating times, etc. The lateral crystallization was observed if the density of “dots” is relatively low. Poly-Si with maximum grain size of 90μm was obtained from the original α-Si deposited by VHF-PECVD. High performance thin film transistor (TFT) monitors were fabricated using this poly-Si.