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中国物理学会期刊

CNx纳米管的制备、结构观察及低场致电子发射性能研究

CSTR: 32037.14.aps.53.2786

Synthesis structure observation and low field emission of CNx nanotubes

CSTR: 32037.14.aps.53.2786
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  • 采用高温热解法,以乙二胺为前驱液,在沉积有铁催化剂的p型硅(111)基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右,直径在50—100nm之间,具有明显的“竹节状”结构,结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试:外加电场为1.4V/μm,观察到20?μA /cm2发射电流,外电场升至2.54V/μm时发射电流达到1.280mA/cm2,在较高外电场下,没有发现电流“饱和”.这比

     

    Aligned CNx nanotubes were fabricated by pyrolyzing ethylenediamine on p-type Si(111) substrates deposited by Fe catalysts. Scanning electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy were used to characterize the CNx nanotubes. The CNx nanotubes about 20μm in length and 50-100?nm in diameter have the “bamboo-like” structure and worse crystallinity. Field emission measurements of the CNx nanotubes indicated that 20μA/cm2 current densities were observed at an electric field of 1.4V/μm,and 1.280mA/cm2 were obtained at 2.54V/μm. No current saturation was found under higher electric field. The CNx nanotubes exhibit better field emission properties than carbon nanotubes and BCN nanotubes that have been grown under same experiment conditions only using different precursor solution. The emission mechanism of CNx nanotubes is also discussed based on their “bamboo-like” structures.

     

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