高价离子对层状结构阴极的插入研究 -

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高价离子对层状结构阴极的插入研究

, 1989, 38(3): 458-465.

DOI: 10.7498/aps.38.458

CSTR: 32037.14.aps.38.458

STUDY ON THE INSERTION OF HIGH-VALENCE CATIONS INTO LAYERED CATHODE

Acta Phys. Sin., 1989, 38(3): 458-465.

DOI: 10.7498/aps.38.458

CSTR: 32037.14.aps.38.458

摘要

研究了高价Mg2+,Zn2+等离子对层状结构阴极如V2O5,MoS2,等的固态电化学插入。用X射线衍射(XRD),电子探针微区分析(EMP),电子自旋共振(ESR)和X射线光电子能谱(XPS)等物理方法研究了相应高价离子对层状阴极插入引起的相变及其插入化合物,对高价离子的插入机理进行了探讨。
Abstract
The study on solid electrochemistry of insertion of high-valence cations such as Mg2+, Zn2+ etc. into the layered material such as V2O5, MoS2 is carried out. The insertion compounds are investigated by a lot of physical techniques such as XRD, EMP, ESR. The mechanism of insertion is disscussed.
作者及机构信息
朱斌,

陈茂春,

刘永谦,

俞文海
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