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本文报道了在射频磁控溅射装置上Nb/Al-AlOx/Nb隧道结的制备工艺和所获得的结果。对SIS三层结构形成时基片的温度、势垒,以及电极形成方法等问题进行了讨论。This paper reports the process for fabricating Nb/Al-AlOx/Nb tunnel junction using rf-magnetron sputtering. The S-I-S sandwich structure is prepared without breaking vacuum. A detailed AES and XTEM analysis of the Nb/Al-AlOx/Nb sandwich structure shows the good quality of Al barrier. Typical l-V characteristic curves of tunnel junction are also given.







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