The atomic configurations of sub-steps created on (111) growth surface of fee crystal by stacking faults with fault vectors 1/6〈112〉and 1/3〈111〉show that they can act as growth step sources. Growth kinetics of stacking fault growth mechanism has been analysed. It has been shown that the nucleation barrier at the sub-steps is always smaller than that of the 2-di-mensional nucleation.