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在八个(111)面磁泡膜上,观察了施加面内(in-plane)磁场后在不同晶轴方向上条状畴的消失过程,测量了条畴消失场Hs*和磁畴消失场Hk*与面内磁场的方向的关系。本文计及立方磁晶各向异性,完善了面内磁场中条畴的稳定性理论。用该理论定性地解释了实验结果的主要特点。导出了Hs*与立方各向异性及面内场方向的两种近似的理论关系,它们分别适用于面内场方向靠近和不十分靠近〈110〉晶轴的情形。它们和实验结果是大致符合的。在〈110〉晶轴上,理论关系具有下列简单的形式:Hk*=Hs*=Hk1+(k1/2Ku)-al/h(4πMs/Hk)22/3,此式与实验结果符合得相当好。The erasing process of stripe domains in eight (111)-oriented garnet bubble films was observed in the presence of an in-plane field. The stripe domain erasing field H*s and the domain erasing field H*k were measured as functions of the azimuthal angle βof the in-plane field. Taking the cubic magnetocrystalline anisotropy into account, a theory of stability of stripe domains subjected to an in-plane field was developed. The main features of the experimental results can be expained qualitatively by this theory. Two theoretical relationships between Hs* and βas well as K1 were found. They are applicable to the cases that the direction of in-plane field is near and not fairly near the 〈110〉 crystallographic axes respectively, and are found to be roughly consistent with the experimental results. In particular, along the 〈110〉axes an analytical expression was obtained:Hk〈110〉* =Hs〈110〉*=Hk1+ K1/2ku-al/h(4pMs/Hk)22/3,which is in good agreement with the experiments.







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