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中国物理学会期刊

NiSi2化合物的电子结构

CSTR: 32037.14.aps.33.1480

ELECTRONIC STRUCTURE OF NiSi2

CSTR: 32037.14.aps.33.1480
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  • 采用自洽LMTO方法,计算了NiSi2化合物的电子结构。所得结果与ARUPS光电子谱结果以及LAPW等计算结果符合得相当好。在NiSi2化合物中Ni3p芯能级移动是与镍原子的电子组态变化有关;镍的3d电子减少导致对镍的3p电子屏蔽作用减弱。计算结果表明离子性对化学键贡献很小。

     

    The electronic structure of NiSi2 was calculated by using the self-consistent LMTO method. Our result was found to be in resonable agreement with the results of AEUPS photoemission experiment and other calculations. The change in the Ni electron configuration was found to be responsible for the Ni3p3/2 core level binding energy shift; the decrease of Ni3d electrons weakened the screening effect for the Ni3p electrons. The result of calculation showed that the ionicity plays a minor role in chemical bond.

     

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