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本文指出在表面产生速度可以看作常数的情况下,用线性电压扫描MOS电容测硅的产生寿命和表面产生速度。测线性扫描饱和电容随扫描速度的变化,可以较方便地求出产生寿命和表面产生速度。对一些MOS电容样品进行了测试。结果表明,测试方法在一定条件下是可行的。A simple method has been developed to determine the generation lifetime and surface generation velocity simultaneously. This method is based upon the high frequency C-V characteristics derived in response to a linear voltage sweep. The experimental results are given for the cases in which the present method is applicable.







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