Acta Physica Sinica - //m.suprmerch.com/ daily 15 2024-11-21 09:33:57 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-11-21 09:33:57 zh Copyright ©Acta Physica Sinica All Rights Reserved.  Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[Finite precision function theory and photon solution of Einstein-Maxwell equations]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2873

This paper puts forward the finite precision function theory. Based on the function theory, a photon solution of finite precision Einstein-Maxwell equations is founded, and the important properties of electromagnetism, gravitation and space-time geometry of the classical photon are revealed.


Acta Physica Sinica. 2009 58(5): 2873-2877. Published 2009-05-20 ]]>

This paper puts forward the finite precision function theory. Based on the function theory, a photon solution of finite precision Einstein-Maxwell equations is founded, and the important properties of electromagnetism, gravitation and space-time geometry of the classical photon are revealed.


Acta Physica Sinica. 2009 58(5): 2873-2877. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2873-2877. article doi:10.7498/aps.58.2873 10.7498/aps.58.2873 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2873 2873-2877
<![CDATA[Study of the ground state wave function in optical lattice by using the genetic algorithm]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2878

Taking the gross-pitaevskii(G-P) mean-field energy functional of Bose condensed gas as the objective function, we study the properties of Bose condensed gas in 1D optical lattice system by using the genetic algorithm, and present a new method to find the ground-state wave function of the system. Through the optimized computation, the currently commonly used Thomas-Fermi approximation and Gaussian approximation model are revised and discussed, and the optimal ground state wave function is given.


Acta Physica Sinica. 2009 58(5): 2878-2883. Published 2009-05-20 ]]>

Taking the gross-pitaevskii(G-P) mean-field energy functional of Bose condensed gas as the objective function, we study the properties of Bose condensed gas in 1D optical lattice system by using the genetic algorithm, and present a new method to find the ground-state wave function of the system. Through the optimized computation, the currently commonly used Thomas-Fermi approximation and Gaussian approximation model are revised and discussed, and the optimal ground state wave function is given.


Acta Physica Sinica. 2009 58(5): 2878-2883. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2878-2883. article doi:10.7498/aps.58.2878 10.7498/aps.58.2878 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2878 2878-2883
<![CDATA[Pancharatnam phase in interaction model of light and phonon]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2884

The Pancharatnam phase in simple polariton model is investigated, and the influences of temperature, coupling strength, frequency difference of photon and phonon and average photon number on the evolution dynamics of Pancharatnam phase are also discussed. The results show that the Pancharatnam phase oscillates with time, the oscillating frequency and wave-form vary with time, and the variation increases with the enhancement of temperature, coupling strength and frequency difference of photon and phonon. The system Pancharatnam phase evolutes regularly when the average photon number of coherent light is small, while it becomes more chaotic as the average photon number increases.


Acta Physica Sinica. 2009 58(5): 2884-2888. Published 2009-05-20 ]]>

The Pancharatnam phase in simple polariton model is investigated, and the influences of temperature, coupling strength, frequency difference of photon and phonon and average photon number on the evolution dynamics of Pancharatnam phase are also discussed. The results show that the Pancharatnam phase oscillates with time, the oscillating frequency and wave-form vary with time, and the variation increases with the enhancement of temperature, coupling strength and frequency difference of photon and phonon. The system Pancharatnam phase evolutes regularly when the average photon number of coherent light is small, while it becomes more chaotic as the average photon number increases.


Acta Physica Sinica. 2009 58(5): 2884-2888. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2884-2888. article doi:10.7498/aps.58.2884 10.7498/aps.58.2884 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2884 2884-2888
<![CDATA[Stochastic resonance under modulated noise in linear systems driven by dichotomous noise]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2889

Stochastic resonance (SR) is studied in linear systems under modulated noise when the modulated noise is a linear combination of multiplicative and additive noise.The exact expression of the first two moments and signal-to-noise ratio(SNR) are obtained.We find the bona fide SR, conventional SR and SR in the broad sense. Both resonance and suppression appear in the bona fide SR. Moreover,choosing mutilplicative and additive noise as modulated noise can enhance SNR for different degrees of cross correlation.


Acta Physica Sinica. 2009 58(5): 2889-2894. Published 2009-05-20 ]]>

Stochastic resonance (SR) is studied in linear systems under modulated noise when the modulated noise is a linear combination of multiplicative and additive noise.The exact expression of the first two moments and signal-to-noise ratio(SNR) are obtained.We find the bona fide SR, conventional SR and SR in the broad sense. Both resonance and suppression appear in the bona fide SR. Moreover,choosing mutilplicative and additive noise as modulated noise can enhance SNR for different degrees of cross correlation.


Acta Physica Sinica. 2009 58(5): 2889-2894. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2889-2894. article doi:10.7498/aps.58.2889 10.7498/aps.58.2889 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2889 2889-2894
<![CDATA[Stochastic resonance of a damped linear oscillator]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2895

The stochastic resonance is studied for a damped linear oscillator subject to both parametric excitation of random noise and external excitation of periodically modulated random noise. By means of the Shapiro-Loginov formula, the expressions of the first-order and the second-order moments are obtained for the system response. It is found that there exist conventional stochastic resonance, bona fide stochastic resonance and stochastic resonance in a broad sense in the system. When the noise intensity ratio R≥1, the stochastic multi_resonance is found in the system. Moreover, the numerical results of power spectrum density of system response are presented to verify the analytic results.


Acta Physica Sinica. 2009 58(5): 2895-2901. Published 2009-05-20 ]]>

The stochastic resonance is studied for a damped linear oscillator subject to both parametric excitation of random noise and external excitation of periodically modulated random noise. By means of the Shapiro-Loginov formula, the expressions of the first-order and the second-order moments are obtained for the system response. It is found that there exist conventional stochastic resonance, bona fide stochastic resonance and stochastic resonance in a broad sense in the system. When the noise intensity ratio R≥1, the stochastic multi_resonance is found in the system. Moreover, the numerical results of power spectrum density of system response are presented to verify the analytic results.


Acta Physica Sinica. 2009 58(5): 2895-2901. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2895-2901. article doi:10.7498/aps.58.2895 10.7498/aps.58.2895 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2895 2895-2901
<![CDATA[Anomalous scaling of the growth equations with spatially and temporally correlated noise]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2902

A dynamic renormalization-group method is generalized to explore the anomalously dynamic scaling property of kinetic roughening growth equation and the general conclusion on the anomalous exponents of the growth equation with spatially and temporally correlated noise is drawn. The results of the anomalous exponents are employed in several typical local growth equations,which include the Kardar-Parisi-Zhang(KPZ)equation,linear equation and Lai-Das Sarma-Villain(LDV) equation, to judge the condition of anomalous scaling behaviors. Analysis shows that within the long wavelength limit the dynamic scaling property of a growth equation is related to the most relevant term, the dimension of the system and noise; and if the anomalous scaling of the equation exists, super_roughening instead of intrinsic anomalous roughening will be displayed in local growth models.


Acta Physica Sinica. 2009 58(5): 2902-2906. Published 2009-05-20 ]]>

A dynamic renormalization-group method is generalized to explore the anomalously dynamic scaling property of kinetic roughening growth equation and the general conclusion on the anomalous exponents of the growth equation with spatially and temporally correlated noise is drawn. The results of the anomalous exponents are employed in several typical local growth equations,which include the Kardar-Parisi-Zhang(KPZ)equation,linear equation and Lai-Das Sarma-Villain(LDV) equation, to judge the condition of anomalous scaling behaviors. Analysis shows that within the long wavelength limit the dynamic scaling property of a growth equation is related to the most relevant term, the dimension of the system and noise; and if the anomalous scaling of the equation exists, super_roughening instead of intrinsic anomalous roughening will be displayed in local growth models.


Acta Physica Sinica. 2009 58(5): 2902-2906. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2902-2906. article doi:10.7498/aps.58.2902 10.7498/aps.58.2902 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2902 2902-2906
<![CDATA[Effects of time period modulation of the noise correlation intensity and bias signal modulation of the noise on stochastic resonance of a single-mode laser]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2907

In the case of the noises modulated by the bias signal, the stochastic resonance of a single-mode laser driven by two colored noises with time period modulation correlation intensity is investigated. By means of the linear approximation method, we calculate the output signal to-noise ratio. The evolution of the output signal to-noise ratio with the self-correlation time of the noises and noise intensity and bias signal is discussed. It is found that the evolution of the output signal to-noise ratio with the pump noise intensity and self-correlation time presents the stochastic resonance. The peak of the stochastic resonance is decreased by the bias signal. Thus we should control the intensity of the bias signal in practice.


Acta Physica Sinica. 2009 58(5): 2907-2913. Published 2009-05-20 ]]>

In the case of the noises modulated by the bias signal, the stochastic resonance of a single-mode laser driven by two colored noises with time period modulation correlation intensity is investigated. By means of the linear approximation method, we calculate the output signal to-noise ratio. The evolution of the output signal to-noise ratio with the self-correlation time of the noises and noise intensity and bias signal is discussed. It is found that the evolution of the output signal to-noise ratio with the pump noise intensity and self-correlation time presents the stochastic resonance. The peak of the stochastic resonance is decreased by the bias signal. Thus we should control the intensity of the bias signal in practice.


Acta Physica Sinica. 2009 58(5): 2907-2913. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2907-2913. article doi:10.7498/aps.58.2907 10.7498/aps.58.2907 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2907 2907-2913
<![CDATA[Hybrid control of hyperchaotic Lorenz system by constant impulse and adaptation impulse]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2914

The question about the control of hyper chaotic Lorenz system has been studied, and the method of hybrid control by constant impulse and adaptation impulse has been proposed according to the impulse control principle and the adaptive control policy. The method can extend the range of control parameter that can control the system to periodical orbit. The simulation results showed the effectiveness of this method.


Acta Physica Sinica. 2009 58(5): 2914-2920. Published 2009-05-20 ]]>

The question about the control of hyper chaotic Lorenz system has been studied, and the method of hybrid control by constant impulse and adaptation impulse has been proposed according to the impulse control principle and the adaptive control policy. The method can extend the range of control parameter that can control the system to periodical orbit. The simulation results showed the effectiveness of this method.


Acta Physica Sinica. 2009 58(5): 2914-2920. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2914-2920. article doi:10.7498/aps.58.2914 10.7498/aps.58.2914 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2914 2914-2920
<![CDATA[Initial condition estimate of coupled map lattices system based on symbolic dynamics]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2921

The initial condition estimate of local coupled map lattice system based on given symbolic sequence is researched. The relationships be tween the parameter of coupling strength, the map function and the performance of estimating initial condition are analyzed. It is proved that any value taken from the phase-space IM does not necessarily converge to the initial vector. There is a direct relationship between convergence property and coupling strength. Moreover, the performances of estimating initial vector are different according to different map functions. The simulation results are completely consistent with theoretical analysis, which shows that the proposed arithmetic for estimating initial vector of coupled map lattice system is correct. The inverse process of coupled map lattice system is fully investigated and the simulation results in this paper provide a theoretical and factual basis for better analysis and description of the physical process of the actual model.


Acta Physica Sinica. 2009 58(5): 2921-2929. Published 2009-05-20 ]]>

The initial condition estimate of local coupled map lattice system based on given symbolic sequence is researched. The relationships be tween the parameter of coupling strength, the map function and the performance of estimating initial condition are analyzed. It is proved that any value taken from the phase-space IM does not necessarily converge to the initial vector. There is a direct relationship between convergence property and coupling strength. Moreover, the performances of estimating initial vector are different according to different map functions. The simulation results are completely consistent with theoretical analysis, which shows that the proposed arithmetic for estimating initial vector of coupled map lattice system is correct. The inverse process of coupled map lattice system is fully investigated and the simulation results in this paper provide a theoretical and factual basis for better analysis and description of the physical process of the actual model.


Acta Physica Sinica. 2009 58(5): 2921-2929. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2921-2929. article doi:10.7498/aps.58.2921 10.7498/aps.58.2921 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2921 2921-2929
<![CDATA[Analytic solution for a class of generalized Sine-Gordon perturbation equation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2930

Using the homotopic mapping method, a class of generalized Sine-Gordon equation is obtained. Firstly, by introducing a homotopic mapping, the homotopic mapping solution for original equation is constructed. The analytic solution for the problem is finally obtained.


Acta Physica Sinica. 2009 58(5): 2930-2933. Published 2009-05-20 ]]>

Using the homotopic mapping method, a class of generalized Sine-Gordon equation is obtained. Firstly, by introducing a homotopic mapping, the homotopic mapping solution for original equation is constructed. The analytic solution for the problem is finally obtained.


Acta Physica Sinica. 2009 58(5): 2930-2933. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2930-2933. article doi:10.7498/aps.58.2930 10.7498/aps.58.2930 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2930 2930-2933
<![CDATA[Chaos control and synchronization in electrical-optical bistable systems]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2934

Based on the characteristic of the electrical-optical bistable system under the condition of long delay, we propose a new scheme of realizing chaos control and synchronization. The results of numerical calculation show that by adjusting the driving intensity and the state of the driving system, not only the driven system can achieve stable control of different periodic states, but also the general chaos synchronization between the driving system and driven system can be realized. Using the maximal Lyapunov exponent (MCLE) as the criterion, the parameter range for realizing chaos synchronization is given.


Acta Physica Sinica. 2009 58(5): 2934-2938. Published 2009-05-20 ]]>

Based on the characteristic of the electrical-optical bistable system under the condition of long delay, we propose a new scheme of realizing chaos control and synchronization. The results of numerical calculation show that by adjusting the driving intensity and the state of the driving system, not only the driven system can achieve stable control of different periodic states, but also the general chaos synchronization between the driving system and driven system can be realized. Using the maximal Lyapunov exponent (MCLE) as the criterion, the parameter range for realizing chaos synchronization is given.


Acta Physica Sinica. 2009 58(5): 2934-2938. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2934-2938. article doi:10.7498/aps.58.2934 10.7498/aps.58.2934 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2934 2934-2938
<![CDATA[Fuzzy impulsive control of chaos in permanent magnet synchronous motors with parameter uncertainties]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2939

In this paper, the Takagi-Sugeno(T-S) fuzzy impulsive control model for PMSMs with parameter uncertainties is established via the T-S modeling technique and impulsive technique. Based on the new model, the control conditions of asymptotical and exponential stability for PMSMs with parameter uncertainties have been derived by Lyapunov method and matrix analysis. An illustrative example is also given to show the effectiveness of our results. Compared with the existing results, the obtained results exhibit certain advantage.


Acta Physica Sinica. 2009 58(5): 2939-2948. Published 2009-05-20 ]]>

In this paper, the Takagi-Sugeno(T-S) fuzzy impulsive control model for PMSMs with parameter uncertainties is established via the T-S modeling technique and impulsive technique. Based on the new model, the control conditions of asymptotical and exponential stability for PMSMs with parameter uncertainties have been derived by Lyapunov method and matrix analysis. An illustrative example is also given to show the effectiveness of our results. Compared with the existing results, the obtained results exhibit certain advantage.


Acta Physica Sinica. 2009 58(5): 2939-2948. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2939-2948. article doi:10.7498/aps.58.2939 10.7498/aps.58.2939 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2939 2939-2948
<![CDATA[Bifurcation of Boost converter with two boundaries and its stability control by ramp compensation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2949

Current mode controlled Boost converter has two boundaries in a wide range of circuit parameters. This paper establishes the piecewise smooth iterative map of the converter by utilizing ramp compensation current and derives borderline equations of the orbit state shifting. The reverse bifurcation diagrams and dynamic behavior distribution diagrams with input voltage and compensation slope as parameters are obtained by numerical simulation. The results indicate that with the input voltage reduction, Boost converter enters into robust chaos under continuous conduction mode (CCM) through a border-collision bifurcation on border 1 from stable period-one, and enters into weak chaos and strong intermittency under discontinuous conduction mode (DCM) via a border-collision bifurcation on border 2 By using ramp compensation, the Boost converter can shift from DCM to CCM, and can effectively be controlled to operate at stable period-one region.


Acta Physica Sinica. 2009 58(5): 2949-2956. Published 2009-05-20 ]]>

Current mode controlled Boost converter has two boundaries in a wide range of circuit parameters. This paper establishes the piecewise smooth iterative map of the converter by utilizing ramp compensation current and derives borderline equations of the orbit state shifting. The reverse bifurcation diagrams and dynamic behavior distribution diagrams with input voltage and compensation slope as parameters are obtained by numerical simulation. The results indicate that with the input voltage reduction, Boost converter enters into robust chaos under continuous conduction mode (CCM) through a border-collision bifurcation on border 1 from stable period-one, and enters into weak chaos and strong intermittency under discontinuous conduction mode (DCM) via a border-collision bifurcation on border 2 By using ramp compensation, the Boost converter can shift from DCM to CCM, and can effectively be controlled to operate at stable period-one region.


Acta Physica Sinica. 2009 58(5): 2949-2956. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2949-2956. article doi:10.7498/aps.58.2949 10.7498/aps.58.2949 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2949 2949-2956
<![CDATA[Chaos in the fractional-order conjugate Chen system and its circuit emulation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2957

This paper studies the chaotic behaviors of the fractional-order conjugate Chen system. The necessary condition for the existence of chaotic attractors in the fractional-order conjugate Chen chaotic system is obtained. Furthermore, a new circuit unit is proposed to realize the fractional-order chaotic system. The results between numerical emulation and circuit experimental simulation are in agreement with each other and prove that chaos actually exits in the fractional-order conjugate Chen system.


Acta Physica Sinica. 2009 58(5): 2957-2962. Published 2009-05-20 ]]>

This paper studies the chaotic behaviors of the fractional-order conjugate Chen system. The necessary condition for the existence of chaotic attractors in the fractional-order conjugate Chen chaotic system is obtained. Furthermore, a new circuit unit is proposed to realize the fractional-order chaotic system. The results between numerical emulation and circuit experimental simulation are in agreement with each other and prove that chaos actually exits in the fractional-order conjugate Chen system.


Acta Physica Sinica. 2009 58(5): 2957-2962. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2957-2962. article doi:10.7498/aps.58.2957 10.7498/aps.58.2957 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2957 2957-2962
<![CDATA[Complicated oscillations in coupled electrical circuits]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2963

The dynamical evolution process of the coupled system connecting two nonlinear electrical circuits with suitable circuit is investigated. The bifurcation behavior as well as the ways to chaos of the two subsystems is presented. It is pointed out when both of the two subsystems behave as periodic, the coupled system may also be led to chaos via cascading of period-doubling bifurcations. Meanwhile, in the chaotic region, critical increase of period as well as period-adding bifurcation can be observed. As to the interaction between periodic movement and the chaotic oscillation, the original periodic subsystem may chaotically oscillate around the original orbit. The amplitude associated with the oscillation increases rapidly, resulting in the obvious chaotic characteristics. On the contrary, the periodic subsystem may not only cause the instability of the chaotic subsystem, but also lead to change of the chaotic structures.


Acta Physica Sinica. 2009 58(5): 2963-2970. Published 2009-05-20 ]]>

The dynamical evolution process of the coupled system connecting two nonlinear electrical circuits with suitable circuit is investigated. The bifurcation behavior as well as the ways to chaos of the two subsystems is presented. It is pointed out when both of the two subsystems behave as periodic, the coupled system may also be led to chaos via cascading of period-doubling bifurcations. Meanwhile, in the chaotic region, critical increase of period as well as period-adding bifurcation can be observed. As to the interaction between periodic movement and the chaotic oscillation, the original periodic subsystem may chaotically oscillate around the original orbit. The amplitude associated with the oscillation increases rapidly, resulting in the obvious chaotic characteristics. On the contrary, the periodic subsystem may not only cause the instability of the chaotic subsystem, but also lead to change of the chaotic structures.


Acta Physica Sinica. 2009 58(5): 2963-2970. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2963-2970. article doi:10.7498/aps.58.2963 10.7498/aps.58.2963 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2963 2963-2970
<![CDATA[Experimental investigation on chaotic behaviors in loss-modulated erbium-doped fiber-ring lasers]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2971

Chaotic behaviors in loss-modulated erbium-doped fiber-ring lasers are reported. In a single-frequency loss-modulated erbium-doped fiber-ring laser, the coexistence of period-doubling bifurcation and intermittency routes to chaos is observed by changing the modulation frequency or the modulation voltage. The results are in agreement with those in an erbium-doped fiber-ring laser subjected to pump modulation. Dual-frequency loss-modulated erbium-doped fiber-ring lasers are proposed. When the value of the frequency ratio is approximately equal to the gold mean and the silver mean, respectively, the transition to chaos via quasiperiodicity is found when the modulation voltage is increased. The modulation voltages for the transition are different for the varied values of the frequency ratio.


Acta Physica Sinica. 2009 58(5): 2971-2976. Published 2009-05-20 ]]>

Chaotic behaviors in loss-modulated erbium-doped fiber-ring lasers are reported. In a single-frequency loss-modulated erbium-doped fiber-ring laser, the coexistence of period-doubling bifurcation and intermittency routes to chaos is observed by changing the modulation frequency or the modulation voltage. The results are in agreement with those in an erbium-doped fiber-ring laser subjected to pump modulation. Dual-frequency loss-modulated erbium-doped fiber-ring lasers are proposed. When the value of the frequency ratio is approximately equal to the gold mean and the silver mean, respectively, the transition to chaos via quasiperiodicity is found when the modulation voltage is increased. The modulation voltages for the transition are different for the varied values of the frequency ratio.


Acta Physica Sinica. 2009 58(5): 2971-2976. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2971-2976. article doi:10.7498/aps.58.2971 10.7498/aps.58.2971 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2971 2971-2976
<![CDATA[Chaotic control of Hindmarsh-Rose neuron by delayed self-feedback]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2977

The control problems of chaotic dynamical patterns of single Hindmarsh-Rose neuron model are studied by using delayed feedback self-control method. Taking gain factor and time delay as controlling parameters respectively, in some ranges of the combination of gain factor and time-delay, we find that the chaotic burst pattern of inter-spike interval sequences of H-R neuron can be controlled to a single_spike period, double_spikes period, 3_or 4_spikes period pattern or multi-period of these patterns for inter-spike interval as the results of numerical simulation analysis. Choice of delay is in-dependent and doesn't rely on the period of unstable periodic orbits embedded within chaotic attractor. The chaotic burst orbit will be controlled to a certain type of periodic patterns of inter-spike interval automatically.


Acta Physica Sinica. 2009 58(5): 2977-2982. Published 2009-05-20 ]]>

The control problems of chaotic dynamical patterns of single Hindmarsh-Rose neuron model are studied by using delayed feedback self-control method. Taking gain factor and time delay as controlling parameters respectively, in some ranges of the combination of gain factor and time-delay, we find that the chaotic burst pattern of inter-spike interval sequences of H-R neuron can be controlled to a single_spike period, double_spikes period, 3_or 4_spikes period pattern or multi-period of these patterns for inter-spike interval as the results of numerical simulation analysis. Choice of delay is in-dependent and doesn't rely on the period of unstable periodic orbits embedded within chaotic attractor. The chaotic burst orbit will be controlled to a certain type of periodic patterns of inter-spike interval automatically.


Acta Physica Sinica. 2009 58(5): 2977-2982. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2977-2982. article doi:10.7498/aps.58.2977 10.7498/aps.58.2977 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2977 2977-2982
<![CDATA[p-moment stability of stochastic impulsive differential equations and impulsive synchronization of Lorenz system excited by parameter white-noise]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2983

In this paper, the p-moment stability of impulsive differential equations is considered. A theory about this problem under a weak condition and an assumption which is more familiar in impulsive system is proved. As an application, the impulsive synchronization of Lorenz system excited by white-noise is considered, the p-moment stability of error system is proved, so the synchronization can be realized using impulsive method under p-moment stability. Numerical simulation verify the feasibility of this synchronization method.


Acta Physica Sinica. 2009 58(5): 2983-2988. Published 2009-05-20 ]]>

In this paper, the p-moment stability of impulsive differential equations is considered. A theory about this problem under a weak condition and an assumption which is more familiar in impulsive system is proved. As an application, the impulsive synchronization of Lorenz system excited by white-noise is considered, the p-moment stability of error system is proved, so the synchronization can be realized using impulsive method under p-moment stability. Numerical simulation verify the feasibility of this synchronization method.


Acta Physica Sinica. 2009 58(5): 2983-2988. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2983-2988. article doi:10.7498/aps.58.2983 10.7498/aps.58.2983 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2983 2983-2988
<![CDATA[Saddle-node bifurcation control of a spring pendulum with single-frequency excitation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2989

Spring pendulum under single-frequency excitation can be described by a group of very complicated nonlinear equations. The paper studies the amplitude of the spring pendulum, and feedback controllers are designed. Analytic method is used to obtain the control equation of amplitude, the relationship function between control parameter and amplitude is also abtained,which may act as an implementation of feedback control method for saddle-node bifurcation control, and also brings multi-scale method to numerical calculation of multiple-degree-of-freedom nonlinear systems.


Acta Physica Sinica. 2009 58(5): 2989-2995. Published 2009-05-20 ]]>

Spring pendulum under single-frequency excitation can be described by a group of very complicated nonlinear equations. The paper studies the amplitude of the spring pendulum, and feedback controllers are designed. Analytic method is used to obtain the control equation of amplitude, the relationship function between control parameter and amplitude is also abtained,which may act as an implementation of feedback control method for saddle-node bifurcation control, and also brings multi-scale method to numerical calculation of multiple-degree-of-freedom nonlinear systems.


Acta Physica Sinica. 2009 58(5): 2989-2995. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2989-2995. article doi:10.7498/aps.58.2989 10.7498/aps.58.2989 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2989 2989-2995
<![CDATA[Refraction of reaction-diffusion plane wave for different diffusion coefficients]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.2996

The effect of diffusion on the refraction of plane wave in two-dimensional reaction-diffusion system described by complex Ginzburg-Landau equation are numerically investigated. We derive the refractive index of plane wave from Snell's law. The numerical and theoretic results show that the refraction of plane wave in a simple purely diffusive system obeys Snell's law, i.e, diffusion only impacts the refractive index of plane wave. However, the refraction of plane wave in reaction-diffusion system obeys Snell's law only for proper diffusion coefficients and system parameters. These results show that diffusion impacts the refraction law and refractive index.


Acta Physica Sinica. 2009 58(5): 2996-3000. Published 2009-05-20 ]]>

The effect of diffusion on the refraction of plane wave in two-dimensional reaction-diffusion system described by complex Ginzburg-Landau equation are numerically investigated. We derive the refractive index of plane wave from Snell's law. The numerical and theoretic results show that the refraction of plane wave in a simple purely diffusive system obeys Snell's law, i.e, diffusion only impacts the refractive index of plane wave. However, the refraction of plane wave in reaction-diffusion system obeys Snell's law only for proper diffusion coefficients and system parameters. These results show that diffusion impacts the refraction law and refractive index.


Acta Physica Sinica. 2009 58(5): 2996-3000. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 2996-3000. article doi:10.7498/aps.58.2996 10.7498/aps.58.2996 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.2996 2996-3000
<![CDATA[Paired behavior effect on pedestrian evacuation dynamics]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3001

Gathered movement follow with the group is a common behavior among familiar pedestrians. In order to study such behavior acts on the impact of the evacuation process, we proposed a new cellular automaton evacuation model which taking into account side-by-side in paired, front-behind in paired, and mixed paired, studied the influence of evacuation among the three paired pattern and compared each other under different parameters.


Acta Physica Sinica. 2009 58(5): 3001-3007. Published 2009-05-20 ]]>

Gathered movement follow with the group is a common behavior among familiar pedestrians. In order to study such behavior acts on the impact of the evacuation process, we proposed a new cellular automaton evacuation model which taking into account side-by-side in paired, front-behind in paired, and mixed paired, studied the influence of evacuation among the three paired pattern and compared each other under different parameters.


Acta Physica Sinica. 2009 58(5): 3001-3007. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3001-3007. article doi:10.7498/aps.58.3001 10.7498/aps.58.3001 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3001 3001-3007
<![CDATA[The fractal measurement of aerosol equivalent volume based on counting signal]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3008

The conception of mass subset is proposed for aerosol which also has been extended to the equivalent mass subset corresponding to counting signal channel. According to statistics, the fractal measurement model of aerosol's equivalent volume for counting signal is established. Due to the aerosols' shape distribution of different mass subsets showing the statistical self-similar character, the calculating formula is given for aerosol equivalent mass of signal channels in the process of aerosol mass measurement. Based on this, the theoretical basis is founded for aerosol mass measurement by using counting method.


Acta Physica Sinica. 2009 58(5): 3008-3013. Published 2009-05-20 ]]>

The conception of mass subset is proposed for aerosol which also has been extended to the equivalent mass subset corresponding to counting signal channel. According to statistics, the fractal measurement model of aerosol's equivalent volume for counting signal is established. Due to the aerosols' shape distribution of different mass subsets showing the statistical self-similar character, the calculating formula is given for aerosol equivalent mass of signal channels in the process of aerosol mass measurement. Based on this, the theoretical basis is founded for aerosol mass measurement by using counting method.


Acta Physica Sinica. 2009 58(5): 3008-3013. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3008-3013. article doi:10.7498/aps.58.3008 10.7498/aps.58.3008 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3008 3008-3013
<![CDATA[Modeling urban expressway systems with ramps and accessory roads by cellular automaton model]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3014

In this paper, a cellular automaton model is proposed to study the traffic of urban expressway systems with on-off-ramps and accessory roads. Three lane changing rules are defined for different road sections. Simulation results show that higher on-ramp rate easily produces traffic jams on main roads, on-ramps and their upstream sections. Higher off-ramp rate easily leads to conflict with the inflow of accessory road. The system having two lanes on main and accessory roads can alleviate the jam degree and decrease the vehicles' running time when on-ramp rates are high.


Acta Physica Sinica. 2009 58(5): 3014-3021. Published 2009-05-20 ]]>

In this paper, a cellular automaton model is proposed to study the traffic of urban expressway systems with on-off-ramps and accessory roads. Three lane changing rules are defined for different road sections. Simulation results show that higher on-ramp rate easily produces traffic jams on main roads, on-ramps and their upstream sections. Higher off-ramp rate easily leads to conflict with the inflow of accessory road. The system having two lanes on main and accessory roads can alleviate the jam degree and decrease the vehicles' running time when on-ramp rates are high.


Acta Physica Sinica. 2009 58(5): 3014-3021. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3014-3021. article doi:10.7498/aps.58.3014 10.7498/aps.58.3014 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3014 3014-3021
<![CDATA[Investigation of phase equilibria and nucleation for supercritical carbon dioxide and model copolymer mixtures]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3022

In this work, an equation of state based on the Weeks-Chandler-Andersen (WCA) perturbation theory was established for the mixture of SC-CO2 and model copolymer. The influences of temperature, pressure and chain length of model copolymer molecules on phase equilibria and critical micelle concentration (CMC) were investigated.


Acta Physica Sinica. 2009 58(5): 3022-3027. Published 2009-05-20 ]]>

In this work, an equation of state based on the Weeks-Chandler-Andersen (WCA) perturbation theory was established for the mixture of SC-CO2 and model copolymer. The influences of temperature, pressure and chain length of model copolymer molecules on phase equilibria and critical micelle concentration (CMC) were investigated.


Acta Physica Sinica. 2009 58(5): 3022-3027. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3022-3027. article doi:10.7498/aps.58.3022 10.7498/aps.58.3022 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3022 3022-3027
<![CDATA[Gravity model for spatial network based on optimal expected traffic]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3028

In this paper, we propose a spatial network model based on the optimal expected traffic. The model maximizes the total expected traffic of the network. By changing two parameters α and γ which represent the dependence of the network on the fitness and geographical constraints respectively, the model can vary its topology from heterogeneous star-like networks to homogeneous road-like networks. We use our model to simulate the Chinese city airline network and compare it with the real data. In the end of the paper, we discuss the relationship of the expected and the real traffic (namely the real weight on the network).


Acta Physica Sinica. 2009 58(5): 3028-3033. Published 2009-05-20 ]]>

In this paper, we propose a spatial network model based on the optimal expected traffic. The model maximizes the total expected traffic of the network. By changing two parameters α and γ which represent the dependence of the network on the fitness and geographical constraints respectively, the model can vary its topology from heterogeneous star-like networks to homogeneous road-like networks. We use our model to simulate the Chinese city airline network and compare it with the real data. In the end of the paper, we discuss the relationship of the expected and the real traffic (namely the real weight on the network).


Acta Physica Sinica. 2009 58(5): 3028-3033. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3028-3033. article doi:10.7498/aps.58.3028 10.7498/aps.58.3028 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3028 3028-3033
<![CDATA[Phenomenological studies on D0-D0 mixing and strong phase difference]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3034

Most recently, both BABAR and Belle experiments found evidences of neutral D mixing. In this paper, we discuss the constraints on the strong phase difference in D0→Kπ decay from the measurements of the mixing parameters y′, yCP, and x at the B-factories. With CP tag technique at ψ(3770) peak, the extraction of the strong phase difference at BES-Ⅲ is discussed. The sensitivity of the measurement of the mixing parameter y is estimated in BES-Ⅲ experiment at ψ(3770) peak. Finally, we make an estimate on the measurements of mixing rate RM.


Acta Physica Sinica. 2009 58(5): 3034-3040. Published 2009-05-20 ]]>

Most recently, both BABAR and Belle experiments found evidences of neutral D mixing. In this paper, we discuss the constraints on the strong phase difference in D0→Kπ decay from the measurements of the mixing parameters y′, yCP, and x at the B-factories. With CP tag technique at ψ(3770) peak, the extraction of the strong phase difference at BES-Ⅲ is discussed. The sensitivity of the measurement of the mixing parameter y is estimated in BES-Ⅲ experiment at ψ(3770) peak. Finally, we make an estimate on the measurements of mixing rate RM.


Acta Physica Sinica. 2009 58(5): 3034-3040. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3034-3040. article doi:10.7498/aps.58.3034 10.7498/aps.58.3034 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3034 3034-3040
<![CDATA[Recursive implementation of Gaussian pulse shaping based on wavelet analysis]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3041

Gaussian pulse shaping filter of exponential decay signal based on wavelet analysis can be more described by using linear combination of both Gaussian function and its first order derivative. On the basis of the recursive approximate algorithm of Gaussian function and its derivative, the recursive approximate algorithm of Gaussian pulse shaping of exponential decay signal based on wavelet analysis is studied. The experiment results with simulating and sampling signals show that the recursive approximate Gaussian pulse shaping is well accorded with the direct convolution of the Gaussian pulse shaping. The characteristic of the Gaussian pulse shaping based on wavelet analysis is well exhibited by the recursive approximate Gaussian pulse shaping. The obtained result can serve as the digital algorithmic base for studying the realization of the Gaussian pulse shaping in digital chip.


Acta Physica Sinica. 2009 58(5): 3041-3046. Published 2009-05-20 ]]>

Gaussian pulse shaping filter of exponential decay signal based on wavelet analysis can be more described by using linear combination of both Gaussian function and its first order derivative. On the basis of the recursive approximate algorithm of Gaussian function and its derivative, the recursive approximate algorithm of Gaussian pulse shaping of exponential decay signal based on wavelet analysis is studied. The experiment results with simulating and sampling signals show that the recursive approximate Gaussian pulse shaping is well accorded with the direct convolution of the Gaussian pulse shaping. The characteristic of the Gaussian pulse shaping based on wavelet analysis is well exhibited by the recursive approximate Gaussian pulse shaping. The obtained result can serve as the digital algorithmic base for studying the realization of the Gaussian pulse shaping in digital chip.


Acta Physica Sinica. 2009 58(5): 3041-3046. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3041-3046. article doi:10.7498/aps.58.3041 10.7498/aps.58.3041 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3041 3041-3046
<![CDATA[Structure and potential energy function of the ground state of OH(D) and SH(D)]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3047

The structure and dissociation energy of the ground state of OH and SH are calculated using QCISD(T)/6-311++G(3df,2pd) method and QCISD(T)/ 6-311++G(3df,2pd). Based on the theory of atomic and molecular statics, the reasonable dissociation limit for the ground state (X2Π) of OH is derived. The potential energy curve and relevant optical constants of this state are obtained by least square fitting to the Murrell-Sorbie function. All calculation results are in good agreement with the experimental data.


Acta Physica Sinica. 2009 58(5): 3047-3051. Published 2009-05-20 ]]>

The structure and dissociation energy of the ground state of OH and SH are calculated using QCISD(T)/6-311++G(3df,2pd) method and QCISD(T)/ 6-311++G(3df,2pd). Based on the theory of atomic and molecular statics, the reasonable dissociation limit for the ground state (X2Π) of OH is derived. The potential energy curve and relevant optical constants of this state are obtained by least square fitting to the Murrell-Sorbie function. All calculation results are in good agreement with the experimental data.


Acta Physica Sinica. 2009 58(5): 3047-3051. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3047-3051. article doi:10.7498/aps.58.3047 10.7498/aps.58.3047 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3047 3047-3051
<![CDATA[Study on structure characteristics of MgO molecule under external electric field]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3052

The influence of external electric field ranging from -003 to 003 a.u. on the equilibrium geometry, HOMO energy level, LUMO energy level, energy gap, harmonic frequency and infrared intensity of MgO ground state molecule is investigated by employing the density functional methods (B3LYP) with basis sets 6-311+G(2DF). The results show that the LUMO energy level, energy gap and harmonic frequency decrease, but the total energy increases with increasing external field. The bond length is proved firstly decreasing, then increasing, however, the HOMO energy level is proved firstly increasing, then decreasing with increasing external field. The maximum of HOMO energy level and minimum of bond length are -021765 a.u. at F=001 a.u. and 017397 nm at F=002 a.u, respectively. The external electric field has effect on excitation energies, oscillator strengths and the position and intensity of infrared spectrum.


Acta Physica Sinica. 2009 58(5): 3052-3057. Published 2009-05-20 ]]>

The influence of external electric field ranging from -003 to 003 a.u. on the equilibrium geometry, HOMO energy level, LUMO energy level, energy gap, harmonic frequency and infrared intensity of MgO ground state molecule is investigated by employing the density functional methods (B3LYP) with basis sets 6-311+G(2DF). The results show that the LUMO energy level, energy gap and harmonic frequency decrease, but the total energy increases with increasing external field. The bond length is proved firstly decreasing, then increasing, however, the HOMO energy level is proved firstly increasing, then decreasing with increasing external field. The maximum of HOMO energy level and minimum of bond length are -021765 a.u. at F=001 a.u. and 017397 nm at F=002 a.u, respectively. The external electric field has effect on excitation energies, oscillator strengths and the position and intensity of infrared spectrum.


Acta Physica Sinica. 2009 58(5): 3052-3057. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3052-3057. article doi:10.7498/aps.58.3052 10.7498/aps.58.3052 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3052 3052-3057
<![CDATA[Effect of external electric field on the optical excitation of silicon dioxide]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3058

The transition wavelengths, oscillator strength, Einstein An0 and B0n coefficients of excitation of silicon dioxide molecule from ground state to the first five different excited states are calculated by employing density function theory B3P86 and single substitute configuration interaction approach with basis set 6-311G**. The excited states of silicon dioxide molecule under different external electric fields are investigated. It is shown that the HOMO-LUMO gaps become smaller and the electrons of the occupied orbital are more apt be exited to the virtual orbital as the external electric field intensity becomes stronger. Thus the application of the external electric field facilitates the exitation of the SiO2 molecules.


Acta Physica Sinica. 2009 58(5): 3058-3063. Published 2009-05-20 ]]>

The transition wavelengths, oscillator strength, Einstein An0 and B0n coefficients of excitation of silicon dioxide molecule from ground state to the first five different excited states are calculated by employing density function theory B3P86 and single substitute configuration interaction approach with basis set 6-311G**. The excited states of silicon dioxide molecule under different external electric fields are investigated. It is shown that the HOMO-LUMO gaps become smaller and the electrons of the occupied orbital are more apt be exited to the virtual orbital as the external electric field intensity becomes stronger. Thus the application of the external electric field facilitates the exitation of the SiO2 molecules.


Acta Physica Sinica. 2009 58(5): 3058-3063. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3058-3063. article doi:10.7498/aps.58.3058 10.7498/aps.58.3058 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3058 3058-3063
<![CDATA[First-principles calculation of the transport properties of silicon-carbon (Si-C) and alumium-nitrogen (Al-N) nanowires]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3064

We investigate the transport properties of oue dimensional silicon-carbon [(SiC)n] and alumium- nitrogen [(Al-N)n] nano-wires coupled to two Al(100) electrodes based on a recently developed ab-initio nonequilibrium Green function formalism.The equilibrium conductance of silicon-carbon and alumium-nitrogen nano-wires decrease with the length of wires. The charge transfer of silicon-carbon increases monotonically with the the length of wires. On the contrary, the charge transfer of alumium-nitrogen nano-wire decreases monotonically with the increasing length of wires. The charge transfer changes almost linearly with increasing gate-voltage for both nano-wires and the variation of the equilibrium conductance is different for the wires. With the increase of the gate-voltage, both nano-wires might be good candidates for molecular switch, especially the (AlN)5 nano-wires.


Acta Physica Sinica. 2009 58(5): 3064-3070. Published 2009-05-20 ]]>

We investigate the transport properties of oue dimensional silicon-carbon [(SiC)n] and alumium- nitrogen [(Al-N)n] nano-wires coupled to two Al(100) electrodes based on a recently developed ab-initio nonequilibrium Green function formalism.The equilibrium conductance of silicon-carbon and alumium-nitrogen nano-wires decrease with the length of wires. The charge transfer of silicon-carbon increases monotonically with the the length of wires. On the contrary, the charge transfer of alumium-nitrogen nano-wire decreases monotonically with the increasing length of wires. The charge transfer changes almost linearly with increasing gate-voltage for both nano-wires and the variation of the equilibrium conductance is different for the wires. With the increase of the gate-voltage, both nano-wires might be good candidates for molecular switch, especially the (AlN)5 nano-wires.


Acta Physica Sinica. 2009 58(5): 3064-3070. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3064-3070. article doi:10.7498/aps.58.3064 10.7498/aps.58.3064 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3064 3064-3070
<![CDATA[Investigation of odd-parity excited states of europium atoms by resonant photoionization spectroscopy]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3071

In this paper, two different detection methods, photoionization and autoionization, are combined to study the spectrum of highly excited states of Eu atom. On the one hand, the bound Eu spectrum with odd-parity in the region of 43927—45010 cm-1 has been measured. The spectral information, such as position and intensity, of 32 transitions can be deduced from the spectra with calibration and the error estimation. The information of excitation process and the selection rules enables us to determine their total angular momenta. Comparison with the related literature show that 12 of the states are newly discovered. On the other hand, we design an effective method to identify different types of highly excited states. The spectra of odd-parity states in the same region are measured by both photoionization and autoionization methods, from which we may separate the Rydberg states from the valence states. of the 32 transitions only 14 can be identified as Rydberg states, and the others are valence states. Furthermore, the effective quantum numbers of the Rydberg states are also discussed in detail with the quantum theory.


Acta Physica Sinica. 2009 58(5): 3071-3077. Published 2009-05-20 ]]>

In this paper, two different detection methods, photoionization and autoionization, are combined to study the spectrum of highly excited states of Eu atom. On the one hand, the bound Eu spectrum with odd-parity in the region of 43927—45010 cm-1 has been measured. The spectral information, such as position and intensity, of 32 transitions can be deduced from the spectra with calibration and the error estimation. The information of excitation process and the selection rules enables us to determine their total angular momenta. Comparison with the related literature show that 12 of the states are newly discovered. On the other hand, we design an effective method to identify different types of highly excited states. The spectra of odd-parity states in the same region are measured by both photoionization and autoionization methods, from which we may separate the Rydberg states from the valence states. of the 32 transitions only 14 can be identified as Rydberg states, and the others are valence states. Furthermore, the effective quantum numbers of the Rydberg states are also discussed in detail with the quantum theory.


Acta Physica Sinica. 2009 58(5): 3071-3077. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3071-3077. article doi:10.7498/aps.58.3071 10.7498/aps.58.3071 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3071 3071-3077
<![CDATA[Numerical study of the enhancement of efficiency of high-order harmonic generation in two-color laser field]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3078

The time-dependent Schrdinger equations (TDSE) of the interaction of two-color laser pulse with Pschl-Teller potential and He+ are solved by using the asymptotic boundary condition and symplectic algorithm. The population of ionization, average distance, high-order harmonic generation (HHG) and population of transition are calculated. The numerical results show that the conversion efficiency of HHG is enhanced in the two-color laser fields, then the qualitative and quantitative analysis for the enhancement of conversion efficiency of HHG are given.


Acta Physica Sinica. 2009 58(5): 3078-3083. Published 2009-05-20 ]]>

The time-dependent Schrdinger equations (TDSE) of the interaction of two-color laser pulse with Pschl-Teller potential and He+ are solved by using the asymptotic boundary condition and symplectic algorithm. The population of ionization, average distance, high-order harmonic generation (HHG) and population of transition are calculated. The numerical results show that the conversion efficiency of HHG is enhanced in the two-color laser fields, then the qualitative and quantitative analysis for the enhancement of conversion efficiency of HHG are given.


Acta Physica Sinica. 2009 58(5): 3078-3083. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3078-3083. article doi:10.7498/aps.58.3078 10.7498/aps.58.3078 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3078 3078-3083
<![CDATA[Theoretical calculation of the partial cross section for He-HF(DF,TF) collision system]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3084

The interaction potentials of the He-HF(DF,TF) van der Waals complexes have been obtained by center of mass transformation and then employing Murrell-Sorbie potential function to fit the accurate interaction energy data, which have been computed at symmetry-adapted perturbation theory (SAPT) level. The close coupling calculation of the partial cross sections for collision of He with HF(DF,TF) is performed by employing the fitted interaction potential. This calculation is performed for incident energies from 30 meV to 120 meV, and the information of the elastic, inelastic and total partial cross sections has been obtained. Further, the change tendency and character of the partial cross sections are discussed, and the ranges of effective interaction of the beginning of elastic and inelastic scattering have been determined for He-HF(DF,TF)collision system.


Acta Physica Sinica. 2009 58(5): 3084-3093. Published 2009-05-20 ]]>

The interaction potentials of the He-HF(DF,TF) van der Waals complexes have been obtained by center of mass transformation and then employing Murrell-Sorbie potential function to fit the accurate interaction energy data, which have been computed at symmetry-adapted perturbation theory (SAPT) level. The close coupling calculation of the partial cross sections for collision of He with HF(DF,TF) is performed by employing the fitted interaction potential. This calculation is performed for incident energies from 30 meV to 120 meV, and the information of the elastic, inelastic and total partial cross sections has been obtained. Further, the change tendency and character of the partial cross sections are discussed, and the ranges of effective interaction of the beginning of elastic and inelastic scattering have been determined for He-HF(DF,TF)collision system.


Acta Physica Sinica. 2009 58(5): 3084-3093. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3084-3093. article doi:10.7498/aps.58.3084 10.7498/aps.58.3084 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3084 3084-3093
<![CDATA[Physical properties of laser-electron Compton scattering]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3094

The energy properties and the differential cross-sections of laser-electron-Compton scattering are quantitatively investigated. The calculations show simple structures of the scattered photon energy and the angular distribution of the differential cross-section. At high incident electron energy, Compton scattering X-ray source has features of easily tunable photon energy and small forward emission angle. Although the dispersion of Compton scattering X-ray source is large, narrow bandwidth X-ray emission can be obtained experimentally by using specific monochromatic filter. The total cross-section and the cross-section within the forward emission angle (γ, where γ= E/m0c2 is the total electron energy (E) in the unit of its static energy (m0c2)) change slightly for different laser wave lengths and different incident electron energies in a broad range from 1 MeV to 10 GeV. They have values of 0067 mb and 0033 mb, respectively. The total cross-section of the visible lights is very small. These results may be useful for building new generation ultra-short X-ray source based on Compton scattering technique.


Acta Physica Sinica. 2009 58(5): 3094-3103. Published 2009-05-20 ]]>

The energy properties and the differential cross-sections of laser-electron-Compton scattering are quantitatively investigated. The calculations show simple structures of the scattered photon energy and the angular distribution of the differential cross-section. At high incident electron energy, Compton scattering X-ray source has features of easily tunable photon energy and small forward emission angle. Although the dispersion of Compton scattering X-ray source is large, narrow bandwidth X-ray emission can be obtained experimentally by using specific monochromatic filter. The total cross-section and the cross-section within the forward emission angle (γ, where γ= E/m0c2 is the total electron energy (E) in the unit of its static energy (m0c2)) change slightly for different laser wave lengths and different incident electron energies in a broad range from 1 MeV to 10 GeV. They have values of 0067 mb and 0033 mb, respectively. The total cross-section of the visible lights is very small. These results may be useful for building new generation ultra-short X-ray source based on Compton scattering technique.


Acta Physica Sinica. 2009 58(5): 3094-3103. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3094-3103. article doi:10.7498/aps.58.3094 10.7498/aps.58.3094 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3094 3094-3103
<![CDATA[Density functional theory study of SimCn (m+n≤7) clusters]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3104

Possible geometrical structures and relative stability of SimCn (m+n≤7) clusters are studied by using the hybrid density functional theory (B3LYP) with 6-31G*basis sets in this article. For the most stable isomers of SimCn (m+n≤7) clusters, the binding energy per atom (Eb), second difference in energy (Δ2E) and HOMO-LUMO gaps (Eg) et al. are analyzed. The calculated results show that: with increasing of the number of atoms the structure of SiC binary clusters transform linear into planar, and then into a three-dimensional structure. When the atomic number is less than 5, all clusters have planer structure except for Si5 and Si4C. With the increase of C atom, the average binding energy of SimCn (m+n≤7) clusters increases, which means that clusters of “rich C' are more stable than clusters of “rich Si', and Sin clusters with C doping can increase the stability. Cn, SiCn and Si2Cn clusters show clearly “odd-even' oscillation and the “magic number' effect, and Si2C,Si3C, Si5C,SiC2,Si3C2, Si4C2 and SiC4 clusters are more stable than other clusters.


Acta Physica Sinica. 2009 58(5): 3104-3111. Published 2009-05-20 ]]>

Possible geometrical structures and relative stability of SimCn (m+n≤7) clusters are studied by using the hybrid density functional theory (B3LYP) with 6-31G*basis sets in this article. For the most stable isomers of SimCn (m+n≤7) clusters, the binding energy per atom (Eb), second difference in energy (Δ2E) and HOMO-LUMO gaps (Eg) et al. are analyzed. The calculated results show that: with increasing of the number of atoms the structure of SiC binary clusters transform linear into planar, and then into a three-dimensional structure. When the atomic number is less than 5, all clusters have planer structure except for Si5 and Si4C. With the increase of C atom, the average binding energy of SimCn (m+n≤7) clusters increases, which means that clusters of “rich C' are more stable than clusters of “rich Si', and Sin clusters with C doping can increase the stability. Cn, SiCn and Si2Cn clusters show clearly “odd-even' oscillation and the “magic number' effect, and Si2C,Si3C, Si5C,SiC2,Si3C2, Si4C2 and SiC4 clusters are more stable than other clusters.


Acta Physica Sinica. 2009 58(5): 3104-3111. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3104-3111. article doi:10.7498/aps.58.3104 10.7498/aps.58.3104 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3104 3104-3111
<![CDATA[Density functional calculation of the geometric and magnetic properties of MPb10(M=Ti,V,Cr,Cu,Pd) clusters]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3112

The geometric and magnetic properties of MPb10 (M=Ti,V,Cr,Cu,Pd)clusters with four probable isomers have been studied using the generalized grandient approximation based on density functional theory. It was found that the D4d structures of MPb10 (M=Ti,V,Cr,Cu,Pd) have the highest binding energy and largest energy gaps among the four possible isomers, indicating that the D4d structure is the ground statess of MPb10 cluster with high kinetical stability. The magnetism study shows that the ground states of TiPb10,VPb10 and CuPb10 clusters have 2 μB, 1 μB and 1 μB magnetic moments, respectively. For M=Ti and Cu, the magnetic ordering of MPb10 clusters is in a weak ferromagnetic arrangement between M and Pb atoms, while there is both weak ferromagnetic and weak antiferromagnetic arrangements between Cu and Pb atoms for the CuPb10 cluster. On the other hand, there is no magnetic moment in the CrPb10 and PdPb10 clusters. Thus, the magnetic properties of MPb10 clusters could be tuned by doping different transition metal atoms into Pb10 cage.


Acta Physica Sinica. 2009 58(5): 3112-3117. Published 2009-05-20 ]]>

The geometric and magnetic properties of MPb10 (M=Ti,V,Cr,Cu,Pd)clusters with four probable isomers have been studied using the generalized grandient approximation based on density functional theory. It was found that the D4d structures of MPb10 (M=Ti,V,Cr,Cu,Pd) have the highest binding energy and largest energy gaps among the four possible isomers, indicating that the D4d structure is the ground statess of MPb10 cluster with high kinetical stability. The magnetism study shows that the ground states of TiPb10,VPb10 and CuPb10 clusters have 2 μB, 1 μB and 1 μB magnetic moments, respectively. For M=Ti and Cu, the magnetic ordering of MPb10 clusters is in a weak ferromagnetic arrangement between M and Pb atoms, while there is both weak ferromagnetic and weak antiferromagnetic arrangements between Cu and Pb atoms for the CuPb10 cluster. On the other hand, there is no magnetic moment in the CrPb10 and PdPb10 clusters. Thus, the magnetic properties of MPb10 clusters could be tuned by doping different transition metal atoms into Pb10 cage.


Acta Physica Sinica. 2009 58(5): 3112-3117. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3112-3117. article doi:10.7498/aps.58.3112 10.7498/aps.58.3112 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3112 3112-3117
<![CDATA[Calculations of three-dimensional frequency-domain nonlinear beam-wave reaction for helix traveling wave tubes]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3118

Considering the attenuation, severing, taper and magnetic admittance, the self-consistent working equations are presented, which describe the operation of 3D nonlinear beam-wave interaction for helix traveling wave tube based on periodic structure characteristic and Poynting's theorem. Using Fourier transform from time-dependent current to ac current consisting of a series of wave frequencies, the space fields are obtained through weighing charge particles to fixed meshes with the help of particle_in_cell technique. The model also computes 3D electronic tracks and helix interception current, the electronic energy spectrum of spent beam are represented, which is helpful for designing multistage depressed collector (MDC). Calculation of Ku-band TWT in IECAS was shown to be in better agreement with experiment, including output power and analysis of MDC.


Acta Physica Sinica. 2009 58(5): 3118-3124. Published 2009-05-20 ]]>

Considering the attenuation, severing, taper and magnetic admittance, the self-consistent working equations are presented, which describe the operation of 3D nonlinear beam-wave interaction for helix traveling wave tube based on periodic structure characteristic and Poynting's theorem. Using Fourier transform from time-dependent current to ac current consisting of a series of wave frequencies, the space fields are obtained through weighing charge particles to fixed meshes with the help of particle_in_cell technique. The model also computes 3D electronic tracks and helix interception current, the electronic energy spectrum of spent beam are represented, which is helpful for designing multistage depressed collector (MDC). Calculation of Ku-band TWT in IECAS was shown to be in better agreement with experiment, including output power and analysis of MDC.


Acta Physica Sinica. 2009 58(5): 3118-3124. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3118-3124. article doi:10.7498/aps.58.3118 10.7498/aps.58.3118 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3118 3118-3124
<![CDATA[Geometric optics analysis on self-reconstruction of the nondiffracting beam generated from an axicon]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3125

Self-reconstruction of the nondiffracting beam generated from an axicon was analyzed for the first time based on the geometrical optics and the formation principle of self-reconstruction was well explained. In the Fresnel approximation, beam transmission characteristics were described well using the theory of Fresnel diffraction. But the approximation condition will not satisfy in the quite little distance after beam passing through the obstacle and the diffraction theory is no longer suitable. In such case, geometrical optics can be used to describe the beam transmission characteristics. In this paper, self-reconstruction of the nondiffracting beam generated from an axicon was analyzed in detail based on the geometrical optics. Simulation and experimental observation of the self-reconstruction characteristic are presented. The experimental results agree with the theoretical analysis.


Acta Physica Sinica. 2009 58(5): 3125-3129. Published 2009-05-20 ]]>

Self-reconstruction of the nondiffracting beam generated from an axicon was analyzed for the first time based on the geometrical optics and the formation principle of self-reconstruction was well explained. In the Fresnel approximation, beam transmission characteristics were described well using the theory of Fresnel diffraction. But the approximation condition will not satisfy in the quite little distance after beam passing through the obstacle and the diffraction theory is no longer suitable. In such case, geometrical optics can be used to describe the beam transmission characteristics. In this paper, self-reconstruction of the nondiffracting beam generated from an axicon was analyzed in detail based on the geometrical optics. Simulation and experimental observation of the self-reconstruction characteristic are presented. The experimental results agree with the theoretical analysis.


Acta Physica Sinica. 2009 58(5): 3125-3129. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3125-3129. article doi:10.7498/aps.58.3125 10.7498/aps.58.3125 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3125 3125-3129
<![CDATA[Study on the frontal condition for continuous phase plate in inertial confinement fusion driver]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3130

Optimal placement for continuous phase plate (CPP) in terminal optical system of the Inertial Confinement Fusion (ICF) driver has been studied. Based on non-linear perturbation and transmitting theory of high power laser, the optical characteristics in near and far fields as well as third harmonic conversion efficiency after passing throngh the frequency conversion system has been calculated. As a result, the third harmonic conversion efficiency and optical characteristics of the emergent light beam are influenced by the CPP which is placed before the frequency conversion system. But if the diameter of the round focal spot in far field is smaller than 05 mm, the decline of the third harmonic conversion efficiency and the rise of contrast ratio are within permitted range, the shape of focal spot in far field and the encircled energy of focal spot also accord with the design requirement at the same time. The CPP which enables small focal spot in far field, when located in the beam path of fundamental frequency of ICF system to smooth and shape the light beam, will not exert influence on the normal running of ICF system.


Acta Physica Sinica. 2009 58(5): 3130-3134. Published 2009-05-20 ]]>

Optimal placement for continuous phase plate (CPP) in terminal optical system of the Inertial Confinement Fusion (ICF) driver has been studied. Based on non-linear perturbation and transmitting theory of high power laser, the optical characteristics in near and far fields as well as third harmonic conversion efficiency after passing throngh the frequency conversion system has been calculated. As a result, the third harmonic conversion efficiency and optical characteristics of the emergent light beam are influenced by the CPP which is placed before the frequency conversion system. But if the diameter of the round focal spot in far field is smaller than 05 mm, the decline of the third harmonic conversion efficiency and the rise of contrast ratio are within permitted range, the shape of focal spot in far field and the encircled energy of focal spot also accord with the design requirement at the same time. The CPP which enables small focal spot in far field, when located in the beam path of fundamental frequency of ICF system to smooth and shape the light beam, will not exert influence on the normal running of ICF system.


Acta Physica Sinica. 2009 58(5): 3130-3134. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3130-3134. article doi:10.7498/aps.58.3130 10.7498/aps.58.3130 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3130 3130-3134
<![CDATA[A method to analyze insertion loss of electroabsorption-modulator using photocurrent and power transmission vs.wavelength]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3135

A novel method to ascertain diversified factors contributing to total insertion loss in an electroabsorption modulator is presented.Only the measurement of photocurrent and power transmission vs.wavelength is needed.It's an accurate method, as shown by both theory analysis and experimental results.


Acta Physica Sinica. 2009 58(5): 3135-3139. Published 2009-05-20 ]]>

A novel method to ascertain diversified factors contributing to total insertion loss in an electroabsorption modulator is presented.Only the measurement of photocurrent and power transmission vs.wavelength is needed.It's an accurate method, as shown by both theory analysis and experimental results.


Acta Physica Sinica. 2009 58(5): 3135-3139. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3135-3139. article doi:10.7498/aps.58.3135 10.7498/aps.58.3135 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3135 3135-3139
<![CDATA[Statistics of the instantaneous polarization in Weibull——distributed fields-the same shape parameter case]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3140

The statistical properties of partially polarized light in Gaussian stochastic plane wave fields have been studied. In this paper, the statistics of the stochastic plane electromagnetic (EM) wave fields with Weibull distributed is examined. The polarimetric Weibull_distributed wave is characterized by three parameters: the sum of the amplitudes of the two electric vector components, the angle which the major axis makes with the reference coordinate system, and the ratio of the minor to the major axis. The joint and marginal probability densities of these random variables are determined as a function of the covariance matrix. The main properties of this important distribution are shown. Then the statistical properties of the normalized Stokes parameters are described in detail in Weibull_distributed stochastic fields. The joint and marginal probability density functions (PDF) of the three components of the normalized Stokes parameters are presented. Results of some numerical calculation are obtained. The description of the Weibull polarimetric wave field may be useful to random medium scattering and speckle filtering.


Acta Physica Sinica. 2009 58(5): 3140-3153. Published 2009-05-20 ]]>

The statistical properties of partially polarized light in Gaussian stochastic plane wave fields have been studied. In this paper, the statistics of the stochastic plane electromagnetic (EM) wave fields with Weibull distributed is examined. The polarimetric Weibull_distributed wave is characterized by three parameters: the sum of the amplitudes of the two electric vector components, the angle which the major axis makes with the reference coordinate system, and the ratio of the minor to the major axis. The joint and marginal probability densities of these random variables are determined as a function of the covariance matrix. The main properties of this important distribution are shown. Then the statistical properties of the normalized Stokes parameters are described in detail in Weibull_distributed stochastic fields. The joint and marginal probability density functions (PDF) of the three components of the normalized Stokes parameters are presented. Results of some numerical calculation are obtained. The description of the Weibull polarimetric wave field may be useful to random medium scattering and speckle filtering.


Acta Physica Sinica. 2009 58(5): 3140-3153. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3140-3153. article doi:10.7498/aps.58.3140 10.7498/aps.58.3140 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3140 3140-3153
<![CDATA[Optimization of optoelectronic reconstruction of phase hologram by use of digital blazed grating]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3154

The utilization efficiency of light energy is affected by the multi-order images during the reconstruction of holograms based on liquid crystal spatial light modulator (LC-SLM), which leads to the low intensity of single image. A novel method is proposed to improve the diffraction efficiency of single reconstructed image by synthesizing phase hologram and digital blazed grating. The property and principle of wave-front modulation are analyzed by use of digital blazed grating as diffractive optical element (DOE). The effect of digital blazed grating on the reconstructed image of phase hologram by use of LC-SLM is also described. Holographic optoelectronic display system based on LC-SLM is set up for phase hologram reconstruction. Theoretical analysis shows that, the intensity of single reconstructed image is increased by 1302 per cent by adding digital blazed grating with period of 2 pixels in vertical or horizontal direction, and 4297 per cent with the same period of digital blazed grating in vertical & horizontal directions. The experimental result also verifies that, by the proposed method, the energy intensity of single reconstructed image is increased and the utilization efficiency of light energy is improved.


Acta Physica Sinica. 2009 58(5): 3154-3160. Published 2009-05-20 ]]>

The utilization efficiency of light energy is affected by the multi-order images during the reconstruction of holograms based on liquid crystal spatial light modulator (LC-SLM), which leads to the low intensity of single image. A novel method is proposed to improve the diffraction efficiency of single reconstructed image by synthesizing phase hologram and digital blazed grating. The property and principle of wave-front modulation are analyzed by use of digital blazed grating as diffractive optical element (DOE). The effect of digital blazed grating on the reconstructed image of phase hologram by use of LC-SLM is also described. Holographic optoelectronic display system based on LC-SLM is set up for phase hologram reconstruction. Theoretical analysis shows that, the intensity of single reconstructed image is increased by 1302 per cent by adding digital blazed grating with period of 2 pixels in vertical or horizontal direction, and 4297 per cent with the same period of digital blazed grating in vertical & horizontal directions. The experimental result also verifies that, by the proposed method, the energy intensity of single reconstructed image is increased and the utilization efficiency of light energy is improved.


Acta Physica Sinica. 2009 58(5): 3154-3160. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3154-3160. article doi:10.7498/aps.58.3154 10.7498/aps.58.3154 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3154 3154-3160
<![CDATA[Effect of spontaneously generated coherence on transient evolution of LWI gain in an open Ladder type system]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3161

The effect of spontaneously generated coherence (SGC) on transient evolution of gain of lasing without inversion (LWI) and modulation roles of the injection rate ratio and exit rate on SGC-dependent gain in an open Ladder type three level system are studied by using the numerical solution of the density matrix motion equation of the system. It was shown that: variation of SGC strength will make the transient and final stationary gains having a considerable changing; when incoherent pumping presents, LWI gain increases with the ratio of injection rates and exit rate decreasing, however, when incoherent pumping is absent, the case is just the opposite; by choosing suitable values of SGC strength, the injection rate ratio and exit rate, we can obtain the largest transient and final stationary gain.


Acta Physica Sinica. 2009 58(5): 3161-3165. Published 2009-05-20 ]]>

The effect of spontaneously generated coherence (SGC) on transient evolution of gain of lasing without inversion (LWI) and modulation roles of the injection rate ratio and exit rate on SGC-dependent gain in an open Ladder type three level system are studied by using the numerical solution of the density matrix motion equation of the system. It was shown that: variation of SGC strength will make the transient and final stationary gains having a considerable changing; when incoherent pumping presents, LWI gain increases with the ratio of injection rates and exit rate decreasing, however, when incoherent pumping is absent, the case is just the opposite; by choosing suitable values of SGC strength, the injection rate ratio and exit rate, we can obtain the largest transient and final stationary gain.


Acta Physica Sinica. 2009 58(5): 3161-3165. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3161-3165. article doi:10.7498/aps.58.3161 10.7498/aps.58.3161 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3161 3161-3165
<![CDATA[Quantum voting protocol using two-mode squeezed states]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3166

A basic quantum voting protocol using two-mode squeezed states is proposed firstly in this paper. This protocol makes use of the uncertainty principle by using random-selection, possible attack modes are then analyzed. The mode-mode correlation of two-mode squeezed states guarantees the security of the protocol.


Acta Physica Sinica. 2009 58(5): 3166-3172. Published 2009-05-20 ]]>

A basic quantum voting protocol using two-mode squeezed states is proposed firstly in this paper. This protocol makes use of the uncertainty principle by using random-selection, possible attack modes are then analyzed. The mode-mode correlation of two-mode squeezed states guarantees the security of the protocol.


Acta Physica Sinica. 2009 58(5): 3166-3172. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3166-3172. article doi:10.7498/aps.58.3166 10.7498/aps.58.3166 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3166 3166-3172
<![CDATA[Study of self-similar pulse nonlinear polarization rotation mode-locked fiber laser]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3173

A numerical model for self-similar pulse nonlinear polarization rotation mode-locked fiber laser is built by utilizing coupled nonlinear Schrdinger equations (CNLSE). In this model, the propagation of the pulse within single mode fiber is described by CNLSE. In the gain fiber, gain bandwidth and saturable gain are both considered. Other optical components which implement NPE mode-locking are modeled by transfer matrixes. According to the optimized net cavity dispersion and length of the cavity, the evolution of the pulse along the cavity is simulated. At the same time, characteristics and the typical regime of the self-similar pulse are found. The simulation results show that pulse with 7 nJ energy, 11 ps duration, linear chirped, and of parabolic shape occurs within the optimized self-similar regime. The characteristics of the laser with different dispersion are compared. The influence of the third order dispersion on the laser is simulated.


Acta Physica Sinica. 2009 58(5): 3173-3178. Published 2009-05-20 ]]>

A numerical model for self-similar pulse nonlinear polarization rotation mode-locked fiber laser is built by utilizing coupled nonlinear Schrdinger equations (CNLSE). In this model, the propagation of the pulse within single mode fiber is described by CNLSE. In the gain fiber, gain bandwidth and saturable gain are both considered. Other optical components which implement NPE mode-locking are modeled by transfer matrixes. According to the optimized net cavity dispersion and length of the cavity, the evolution of the pulse along the cavity is simulated. At the same time, characteristics and the typical regime of the self-similar pulse are found. The simulation results show that pulse with 7 nJ energy, 11 ps duration, linear chirped, and of parabolic shape occurs within the optimized self-similar regime. The characteristics of the laser with different dispersion are compared. The influence of the third order dispersion on the laser is simulated.


Acta Physica Sinica. 2009 58(5): 3173-3178. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3173-3178. article doi:10.7498/aps.58.3173 10.7498/aps.58.3173 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3173 3173-3178
<![CDATA[Threshold characteristics of evanescent-wave pumped whispering-gallery-mode fiber laser]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3179

The lasing threshold of evanescent-wave pumped whispering_gallery_mode (WGM) fiber lasers has been studied. Quartz fibers of different diameters were immersed in a mixed solution of ethanol and ethylene glycol doped by rhodamine 6G dye molecules, the refractive index of the solution was variable and lower than that of quartz fiber. We find that the dependence of lasing threshold on the refractive index of the mixed solution differs for different diameter of quartz fiber. With the increase of refractive index of the mixed solution from 1362 to 1432, the threshold energy decreases slowly and monotonicly for fibers of diameters larger than 296 μm, but increases for fibers of diameters smaller than 93 μm; for a fiber of diameter 197 μm, the threshold energy decreases slowly at first, and then increases sharply, there is an optimum refractive index of the mixed solution which matches a minimum threshold energy. Based on the theory of evanescent-wave pumped WGM fiber laser, we deduce a formula of lasing threshold, the calculated curves of lasing threshold are well consistent with the experimental data.


Acta Physica Sinica. 2009 58(5): 3179-3184. Published 2009-05-20 ]]>

The lasing threshold of evanescent-wave pumped whispering_gallery_mode (WGM) fiber lasers has been studied. Quartz fibers of different diameters were immersed in a mixed solution of ethanol and ethylene glycol doped by rhodamine 6G dye molecules, the refractive index of the solution was variable and lower than that of quartz fiber. We find that the dependence of lasing threshold on the refractive index of the mixed solution differs for different diameter of quartz fiber. With the increase of refractive index of the mixed solution from 1362 to 1432, the threshold energy decreases slowly and monotonicly for fibers of diameters larger than 296 μm, but increases for fibers of diameters smaller than 93 μm; for a fiber of diameter 197 μm, the threshold energy decreases slowly at first, and then increases sharply, there is an optimum refractive index of the mixed solution which matches a minimum threshold energy. Based on the theory of evanescent-wave pumped WGM fiber laser, we deduce a formula of lasing threshold, the calculated curves of lasing threshold are well consistent with the experimental data.


Acta Physica Sinica. 2009 58(5): 3179-3184. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3179-3184. article doi:10.7498/aps.58.3179 10.7498/aps.58.3179 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3179 3179-3184
<![CDATA[Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3185

We proposed a novel extended semiconductor optical amplifier (SOA) model for applications in femtosecond pulse transmission,in which various ultrafast nonlinear effects,such as gain dispersion and group velocity dispersion were taken into account. We analyzed the refractive index in response to variation of the input current and the length of SOA. Furthermore,the impact of carrier density pulsation and carrier heating on the refractive index dynamics of SOA was discussed respectively. The simulation model can be applied in parameter and operation condition optimization of SOAs in order to improve their femtosecond dynamic characteristics.


Acta Physica Sinica. 2009 58(5): 3185-3192. Published 2009-05-20 ]]>

We proposed a novel extended semiconductor optical amplifier (SOA) model for applications in femtosecond pulse transmission,in which various ultrafast nonlinear effects,such as gain dispersion and group velocity dispersion were taken into account. We analyzed the refractive index in response to variation of the input current and the length of SOA. Furthermore,the impact of carrier density pulsation and carrier heating on the refractive index dynamics of SOA was discussed respectively. The simulation model can be applied in parameter and operation condition optimization of SOAs in order to improve their femtosecond dynamic characteristics.


Acta Physica Sinica. 2009 58(5): 3185-3192. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3185-3192. article doi:10.7498/aps.58.3185 10.7498/aps.58.3185 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3185 3185-3192
<![CDATA[Study of acousto-optic Q-switched green laser with high efficiency,high stability and high-quality coherent beam generation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3193

High-power and high efficient coherent beam generation with good green-beam quality has been achieved by optimizing the diode-side-pumped linear cavity geometry with two modules in tandem, acousto-optic Q-switching and with S-KTP of Ⅱ-type phase-matching for intracavity frequency doubling of a Nd:YAG laser. When the pump current is 45A, the maximum average green output power of 132 W is obtained with pulse width of 120 ns at pulse repetition rate of 15 kHz, corresponding to the conversion efficiency of 132% from diode pump power to green output power. The M2 beam quality factor is 67 at output power of 130 W, and the output power instability is less than 05% at the same output power during an hour measurement time. The thermo-lensing effect of the laser medium and the stable region of the laser cavity under high power pumping are also theoretically analyzed and experimentally researched.


Acta Physica Sinica. 2009 58(5): 3193-3197. Published 2009-05-20 ]]>

High-power and high efficient coherent beam generation with good green-beam quality has been achieved by optimizing the diode-side-pumped linear cavity geometry with two modules in tandem, acousto-optic Q-switching and with S-KTP of Ⅱ-type phase-matching for intracavity frequency doubling of a Nd:YAG laser. When the pump current is 45A, the maximum average green output power of 132 W is obtained with pulse width of 120 ns at pulse repetition rate of 15 kHz, corresponding to the conversion efficiency of 132% from diode pump power to green output power. The M2 beam quality factor is 67 at output power of 130 W, and the output power instability is less than 05% at the same output power during an hour measurement time. The thermo-lensing effect of the laser medium and the stable region of the laser cavity under high power pumping are also theoretically analyzed and experimentally researched.


Acta Physica Sinica. 2009 58(5): 3193-3197. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3193-3197. article doi:10.7498/aps.58.3193 10.7498/aps.58.3193 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3193 3193-3197
<![CDATA[Spatial weak-light ring dark solitons in an electromagnetically induced transparency medium]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3198

By using multiple-scale method,we analytically study the nonlinear dynamical properties of an electromagnetically induced transparency medium with three-level atoms and a strong coupling light field. It is shown that a weak probe light beam can form spatial weak-light dark solitons. When it propagates along axial direction,the dark soliton will transforms into a steady spatial weak-light ring dark soliton,which results from the balance of the interplay between beam diffraction and refractive nonlinearity.


Acta Physica Sinica. 2009 58(5): 3198-3202. Published 2009-05-20 ]]>

By using multiple-scale method,we analytically study the nonlinear dynamical properties of an electromagnetically induced transparency medium with three-level atoms and a strong coupling light field. It is shown that a weak probe light beam can form spatial weak-light dark solitons. When it propagates along axial direction,the dark soliton will transforms into a steady spatial weak-light ring dark soliton,which results from the balance of the interplay between beam diffraction and refractive nonlinearity.


Acta Physica Sinica. 2009 58(5): 3198-3202. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3198-3202. article doi:10.7498/aps.58.3198 10.7498/aps.58.3198 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3198 3198-3202
<![CDATA[Flat broadband chaotic carrier generation and synchronization]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3203

The chaotic carrier with smooth spectrum and broad bandwidth is generated by a distributed feedback (DFB) semiconductor laser subject to unidirectional fiber ring optical feedback. The smooth spectrum of the obtained chaotic carrier hides the external cavity resonance frequency peak,therefore the security of the system is enhanced. By unidirectional coupling,we implement the stable chaos synchronization when the chaotic light is injected into a solitary DFB laser diode. The correlation coefficient of synchronization is 0.84. The effects of injection strength and optical frequency detuning on synchronization are investigated experimentally. The results show that in conditions of strong injected locking the synchronization can be achieved in a large range of frequency detuning,and the stronger injection corresponds to the larger range of frequency detuning in which chaos synchronization maintains. The synchronization quality improves with the injection strength increasing.


Acta Physica Sinica. 2009 58(5): 3203-3207. Published 2009-05-20 ]]>

The chaotic carrier with smooth spectrum and broad bandwidth is generated by a distributed feedback (DFB) semiconductor laser subject to unidirectional fiber ring optical feedback. The smooth spectrum of the obtained chaotic carrier hides the external cavity resonance frequency peak,therefore the security of the system is enhanced. By unidirectional coupling,we implement the stable chaos synchronization when the chaotic light is injected into a solitary DFB laser diode. The correlation coefficient of synchronization is 0.84. The effects of injection strength and optical frequency detuning on synchronization are investigated experimentally. The results show that in conditions of strong injected locking the synchronization can be achieved in a large range of frequency detuning,and the stronger injection corresponds to the larger range of frequency detuning in which chaos synchronization maintains. The synchronization quality improves with the injection strength increasing.


Acta Physica Sinica. 2009 58(5): 3203-3207. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3203-3207. article doi:10.7498/aps.58.3203 10.7498/aps.58.3203 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3203 3203-3207
<![CDATA[The effect of nonlinear exposure on bandgap of three-dimensional holographic photonic crystal]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3208

The effect of nonlinear exposure on the characteristics of photonic crystal fabricated by holography is investigated theoretically and experimentally. A kind of materials with low refractive index (n=152) is used to fabricate diamond structure. By controlling the exposure in strong nonlinear range, the property of photonic bandgap is improved. Also,some proposals are made to achieve complete band gaps by materials with low refractive index.


Acta Physica Sinica. 2009 58(5): 3208-3213. Published 2009-05-20 ]]>

The effect of nonlinear exposure on the characteristics of photonic crystal fabricated by holography is investigated theoretically and experimentally. A kind of materials with low refractive index (n=152) is used to fabricate diamond structure. By controlling the exposure in strong nonlinear range, the property of photonic bandgap is improved. Also,some proposals are made to achieve complete band gaps by materials with low refractive index.


Acta Physica Sinica. 2009 58(5): 3208-3213. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3208-3213. article doi:10.7498/aps.58.3208 10.7498/aps.58.3208 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3208 3208-3213
<![CDATA[Tunable effects of connective dendritic left-handed metamaterials based on electrorheological fluids]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3214

We experimentally studied the tunable effects of connective dendritic left-handed metamaterials based on electrorheological fluids. Three influencing factors-the distance of electrodes,the permittivity of embedding media,and the intensity of applied electric fields-are discussed respectively. The experimental results show that the distance of electrodes exhibits an important effect on the transmission peak of the samples. The left-handed transmission peak shifts to lower frequency when the electrorheological fluids infiltrate. Moreover,by changing the intensity of electric field,the left-handed transmission peak can be modulated actively,and the maximum shift is up to 140 MHz.


Acta Physica Sinica. 2009 58(5): 3214-3219. Published 2009-05-20 ]]>

We experimentally studied the tunable effects of connective dendritic left-handed metamaterials based on electrorheological fluids. Three influencing factors-the distance of electrodes,the permittivity of embedding media,and the intensity of applied electric fields-are discussed respectively. The experimental results show that the distance of electrodes exhibits an important effect on the transmission peak of the samples. The left-handed transmission peak shifts to lower frequency when the electrorheological fluids infiltrate. Moreover,by changing the intensity of electric field,the left-handed transmission peak can be modulated actively,and the maximum shift is up to 140 MHz.


Acta Physica Sinica. 2009 58(5): 3214-3219. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3214-3219. article doi:10.7498/aps.58.3214 10.7498/aps.58.3214 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3214 3214-3219
<![CDATA[Multiband negative index metamaterials at optical frequencies]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3220

Based on the fishnet negative index metamaterials (NIMs) of circular-shaped holes operating at optical frequencies,the influence of modifying the hole shape is studied using the commercial software package CST Microwave studio. Numerical simulations show that,even a tiny modification may lead to broadening of the negative refractive band. So we designed two fishnet NIMs of the gradient holes and half-global holes. Compared with the fishnet NIMs of circular-shaped holes,these two structures can realize negative refraction at multi-frequency bands,and the resonance frequencies exhibit an obvious red-shift. We present a chemical technique for preparing the fishnet NIMs of half-global holes,which is a simple and feasible way to realize multiband negative index metamaterials at optical frequencies.


Acta Physica Sinica. 2009 58(5): 3220-3223. Published 2009-05-20 ]]>

Based on the fishnet negative index metamaterials (NIMs) of circular-shaped holes operating at optical frequencies,the influence of modifying the hole shape is studied using the commercial software package CST Microwave studio. Numerical simulations show that,even a tiny modification may lead to broadening of the negative refractive band. So we designed two fishnet NIMs of the gradient holes and half-global holes. Compared with the fishnet NIMs of circular-shaped holes,these two structures can realize negative refraction at multi-frequency bands,and the resonance frequencies exhibit an obvious red-shift. We present a chemical technique for preparing the fishnet NIMs of half-global holes,which is a simple and feasible way to realize multiband negative index metamaterials at optical frequencies.


Acta Physica Sinica. 2009 58(5): 3220-3223. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3220-3223. article doi:10.7498/aps.58.3220 10.7498/aps.58.3220 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3220 3220-3223
<![CDATA[Planar left-handed metamaterials based on double split-ring resonator pairs]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3224

By theoretical analysis and experimental simulation,planar left-handed metamaterials using double split-ring resonator pairs are studied in this paper. Simultaneous negative permittivity and permeability are described and explained by using equivalent circuit theory. Moreover,double split-ring resonator pairs used in the design of 3-dimensional left-handed metamaterials are also investigated. The results show that double split-ring resonator pairs can be used as planar left-handed metamaterials with small sizes and that double split-ring resonator pairs can be also used as 3-dimensional anisotropic magnetic metamaterials to realized negative permeability in 3-dimensional left-handed metamaterials.


Acta Physica Sinica. 2009 58(5): 3224-3229. Published 2009-05-20 ]]>

By theoretical analysis and experimental simulation,planar left-handed metamaterials using double split-ring resonator pairs are studied in this paper. Simultaneous negative permittivity and permeability are described and explained by using equivalent circuit theory. Moreover,double split-ring resonator pairs used in the design of 3-dimensional left-handed metamaterials are also investigated. The results show that double split-ring resonator pairs can be used as planar left-handed metamaterials with small sizes and that double split-ring resonator pairs can be also used as 3-dimensional anisotropic magnetic metamaterials to realized negative permeability in 3-dimensional left-handed metamaterials.


Acta Physica Sinica. 2009 58(5): 3224-3229. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3224-3229. article doi:10.7498/aps.58.3224 10.7498/aps.58.3224 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3224 3224-3229
<![CDATA[The influence of the material dispersion on the dual-peak resonance effect]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3230

Based on rigorous coupling theory,the influence of the dispersion of the core,cladding,film and surrounding material on the dual-peak resonance effect is studied. The result shows that the theoretical model which considers both the core and cladding material dispersion is necessary and feasible. Further,the influence of the material dispersion on the transmission characteristics of LPFG is analyzed for different film parameters. The deviation value between the dual resonant peaks is calculated before and after considering the material dispersion. The result shows that the deviation value is 1.5—2 nm and 6.5—7.5 nm, respectively. Finally,the influence of the material dispersion on the sensor sensitivity is studied for the dual-peak LPFG sensor. The result indicates that the minimum resolution for the film refractive index is 10-8,and the contour line figure after considering the material dispersion supplies accurate parameter combinations in the design of this kind of sensor.


Acta Physica Sinica. 2009 58(5): 3230-3237. Published 2009-05-20 ]]>

Based on rigorous coupling theory,the influence of the dispersion of the core,cladding,film and surrounding material on the dual-peak resonance effect is studied. The result shows that the theoretical model which considers both the core and cladding material dispersion is necessary and feasible. Further,the influence of the material dispersion on the transmission characteristics of LPFG is analyzed for different film parameters. The deviation value between the dual resonant peaks is calculated before and after considering the material dispersion. The result shows that the deviation value is 1.5—2 nm and 6.5—7.5 nm, respectively. Finally,the influence of the material dispersion on the sensor sensitivity is studied for the dual-peak LPFG sensor. The result indicates that the minimum resolution for the film refractive index is 10-8,and the contour line figure after considering the material dispersion supplies accurate parameter combinations in the design of this kind of sensor.


Acta Physica Sinica. 2009 58(5): 3230-3237. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3230-3237. article doi:10.7498/aps.58.3230 10.7498/aps.58.3230 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3230 3230-3237
<![CDATA[Photoinduced refractive index change effect of amorphous Sn-doped As2S8 film and its application in stripe waveguide fabrication]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3238

Photoinduced changes in refractive index and film thickness of amorphous Sn1As20S79 semiconductor film are studied experimentally. The emperical rules in as-evaporated,annealed and well-illuminated states are obtained respectively. An ultraviolet irradiation technique is presented and employed successfully to fabricate a Sn1As20S79 stripe waveguide, which shaws good characteristics of a waveguide under the 632.8nm guided mode excitation.


Acta Physica Sinica. 2009 58(5): 3238-3242. Published 2009-05-20 ]]>

Photoinduced changes in refractive index and film thickness of amorphous Sn1As20S79 semiconductor film are studied experimentally. The emperical rules in as-evaporated,annealed and well-illuminated states are obtained respectively. An ultraviolet irradiation technique is presented and employed successfully to fabricate a Sn1As20S79 stripe waveguide, which shaws good characteristics of a waveguide under the 632.8nm guided mode excitation.


Acta Physica Sinica. 2009 58(5): 3238-3242. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3238-3242. article doi:10.7498/aps.58.3238 10.7498/aps.58.3238 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3238 3238-3242
<![CDATA[Theoretical study on the rule of plasma temperature decay in the process of lightning dissipation]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3243

The temporal and spatial distributions of the plasma temperature during the dissipation process of lightning are calculated theoretically by applying the equation of motion,the equation of continuity and the equation of energy conservation of hydrostatics. The result shows that the temperature decay at a given radius is quicker in the earlier stage and slower in the later stage; Furthermore,the higher the original temperature,the quicker the decay. The temperature decays slower when the radius becomes larger. At the same time,the larger the radius of lightning channel,the greater the temperature gradient, and vice versa. According to the time and position of freezing temperature of NO,we can conclude primarily that NOx are produced in the channel of less than 9 mm radius in the time within 50 ms after the lightning return stroke.


Acta Physica Sinica. 2009 58(5): 3243-3247. Published 2009-05-20 ]]>

The temporal and spatial distributions of the plasma temperature during the dissipation process of lightning are calculated theoretically by applying the equation of motion,the equation of continuity and the equation of energy conservation of hydrostatics. The result shows that the temperature decay at a given radius is quicker in the earlier stage and slower in the later stage; Furthermore,the higher the original temperature,the quicker the decay. The temperature decays slower when the radius becomes larger. At the same time,the larger the radius of lightning channel,the greater the temperature gradient, and vice versa. According to the time and position of freezing temperature of NO,we can conclude primarily that NOx are produced in the channel of less than 9 mm radius in the time within 50 ms after the lightning return stroke.


Acta Physica Sinica. 2009 58(5): 3243-3247. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3243-3247. article doi:10.7498/aps.58.3243 10.7498/aps.58.3243 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3243 3243-3247
<![CDATA[Atom-orbital close-coupling calculation of charge exchange processes in collisions of H+ with Li(5d)]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3248

The charge exchange process in collisions of H+ with Li (5d) is investigated using the two-center atomic-orbital close-coupling method. The state-selective cross-sections are obtained in the energy range of 0.5—10 keV. It is found that the processes for capture to n=4—7 are the dominant reactions,and the n-distribution of state-selective cross-sections is weakly dependent on the collision energy. But the l-distribution of state-selective cross-sections strongly depends on the collision energy. For the lower collision energy around 1 keV,the l-distribution increases with increasing l. However,the l-distribution moves to the lower quantum number as the collision energy increases,and the maximum value appears around l=1.


Acta Physica Sinica. 2009 58(5): 3248-3254. Published 2009-05-20 ]]>

The charge exchange process in collisions of H+ with Li (5d) is investigated using the two-center atomic-orbital close-coupling method. The state-selective cross-sections are obtained in the energy range of 0.5—10 keV. It is found that the processes for capture to n=4—7 are the dominant reactions,and the n-distribution of state-selective cross-sections is weakly dependent on the collision energy. But the l-distribution of state-selective cross-sections strongly depends on the collision energy. For the lower collision energy around 1 keV,the l-distribution increases with increasing l. However,the l-distribution moves to the lower quantum number as the collision energy increases,and the maximum value appears around l=1.


Acta Physica Sinica. 2009 58(5): 3248-3254. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3248-3254. article doi:10.7498/aps.58.3248 10.7498/aps.58.3248 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3248 3248-3254
<![CDATA[Experimental study of radiation temperature for gold hohlraum heated with 1 ns,0.35 μm lasers on SG-Ⅲ prototype laser facility]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3255

Experimental measurement of radiation temperature by a streaked optical pyrometer and a soft X-ray spectrometer viewing through the laser entrance hole are performed on SG-Ⅲ prototype laser facility. It was found that the two methods compares well. Using the power balance relation,the laser-hohlraum coupling efficiency for 1.0 mm×1.7 mm hohlraum and 1.0 mm×2.1 mm hohlraum is around 50%—55%.


Acta Physica Sinica. 2009 58(5): 3255-3261. Published 2009-05-20 ]]>

Experimental measurement of radiation temperature by a streaked optical pyrometer and a soft X-ray spectrometer viewing through the laser entrance hole are performed on SG-Ⅲ prototype laser facility. It was found that the two methods compares well. Using the power balance relation,the laser-hohlraum coupling efficiency for 1.0 mm×1.7 mm hohlraum and 1.0 mm×2.1 mm hohlraum is around 50%—55%.


Acta Physica Sinica. 2009 58(5): 3255-3261. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3255-3261. article doi:10.7498/aps.58.3255 10.7498/aps.58.3255 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3255 3255-3261
<![CDATA[Neutron flux measurement and analysis in the HT-7 deuterium plasma]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3262

Fusion neutron and photon neutron producing behavior in the deuterium plasma discharge have been studied on HT-7 superconductive tokamak device by BF3 and 3He proportional ionization chamber implementing the fast time respond neutron flux measurement system. Typical time resolved neutron flux signals have been analyzed in connection with gamma and hard X-ray diagnostic data in the cases of ohmic discharge and lower hybrid wave discharge. Data analysis show that many neutrons are produced by D-D fusion reaction when high-power lower hybrid wave was employed to heat the plasma.


Acta Physica Sinica. 2009 58(5): 3262-3267. Published 2009-05-20 ]]>

Fusion neutron and photon neutron producing behavior in the deuterium plasma discharge have been studied on HT-7 superconductive tokamak device by BF3 and 3He proportional ionization chamber implementing the fast time respond neutron flux measurement system. Typical time resolved neutron flux signals have been analyzed in connection with gamma and hard X-ray diagnostic data in the cases of ohmic discharge and lower hybrid wave discharge. Data analysis show that many neutrons are produced by D-D fusion reaction when high-power lower hybrid wave was employed to heat the plasma.


Acta Physica Sinica. 2009 58(5): 3262-3267. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3262-3267. article doi:10.7498/aps.58.3262 10.7498/aps.58.3262 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3262 3262-3267
<![CDATA[Numerical simulation of the breakdown on HPM dielectric surface]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3268

This paper presents the electrostatic PIC-MCC model for simulating the breakdown of dielectric surfaces illuminated by high-power microwave,and the processes of multipactor and collisional ionization in the case of vacuum and different pressures are simulated by using the code developed by ourselves. The numerical results show that the multipactor effect is the main source of electrons,and the number of the electrons oscillates in the time domain at twice the rf frequency in the case of vacuum and low pressures. In the case of high pressure,the collisional ionization is the main source of electrons.


Acta Physica Sinica. 2009 58(5): 3268-3273. Published 2009-05-20 ]]>

This paper presents the electrostatic PIC-MCC model for simulating the breakdown of dielectric surfaces illuminated by high-power microwave,and the processes of multipactor and collisional ionization in the case of vacuum and different pressures are simulated by using the code developed by ourselves. The numerical results show that the multipactor effect is the main source of electrons,and the number of the electrons oscillates in the time domain at twice the rf frequency in the case of vacuum and low pressures. In the case of high pressure,the collisional ionization is the main source of electrons.


Acta Physica Sinica. 2009 58(5): 3268-3273. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3268-3273. article doi:10.7498/aps.58.3268 10.7498/aps.58.3268 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3268 3268-3273
<![CDATA[High temperature annealing treatment on Co doped ZnO bulks]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3274

Zn0.95Co0.05O Bulk samples were synthesized by solid state reaction method and annealed by different processes. The Zn treated samples show ferromagnetism,whereas the vacuum annealed samples do not show ferromagnetism. The XRD patterns show that there is Co impurity phase in the sample after Zn treatment at 1100℃,which is the reason of the ferromagnetism observed. At low temperature,both the positive and negative magnetoresistance (MR) effect can be observed for all the samples. We conclude that the s-d exchange_interaction_induced spin-splitting gives rise to positive MR, while the formation of bound magnetic polarons and the magnetic field suppressed spin-disorder scattering are responsible for the negative MR behavior under high field.


Acta Physica Sinica. 2009 58(5): 3274-3279. Published 2009-05-20 ]]>

Zn0.95Co0.05O Bulk samples were synthesized by solid state reaction method and annealed by different processes. The Zn treated samples show ferromagnetism,whereas the vacuum annealed samples do not show ferromagnetism. The XRD patterns show that there is Co impurity phase in the sample after Zn treatment at 1100℃,which is the reason of the ferromagnetism observed. At low temperature,both the positive and negative magnetoresistance (MR) effect can be observed for all the samples. We conclude that the s-d exchange_interaction_induced spin-splitting gives rise to positive MR, while the formation of bound magnetic polarons and the magnetic field suppressed spin-disorder scattering are responsible for the negative MR behavior under high field.


Acta Physica Sinica. 2009 58(5): 3274-3279. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3274-3279. article doi:10.7498/aps.58.3274 10.7498/aps.58.3274 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3274 3274-3279
<![CDATA[Phase configuration and stability in the nanocrystalline Sm-Co system]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3280

A thermodynamic model that describes the thermal properties of the compound phases in the nanocrystalline (NC) alloy systems has been developed,which provides quantitative predictions on the stabilities and transition features of different phases. By using the NC Sm-Co alloy system as an example,the temperature dependence of the mole Gibbs free energy of the NC alloy phases with different excess volumes in the nano-grain boundary regions were provided. Based on the model calculations,the relative stability of different phases and the phase transition rules in the NC Sm-Co system were analyzed. It was shown by the calculation results that near the room temperature,some of the NC alloy phases,whose mole Gibbs free energy values change from negative to positive due to the decrease of the nano-grain size,will transform into stable NC alloy phases. This is distinctly different from the phase transformation features in the coarse-grained alloy systems,whose thermodynamic properties are only dependent on the temperature. The experimental results on the phase configuration and the phase stability obtained from the prepared NC Sm-Co alloy confirmed the theoretical predictions of the present thermodynamic model.


Acta Physica Sinica. 2009 58(5): 3280-3286. Published 2009-05-20 ]]>

A thermodynamic model that describes the thermal properties of the compound phases in the nanocrystalline (NC) alloy systems has been developed,which provides quantitative predictions on the stabilities and transition features of different phases. By using the NC Sm-Co alloy system as an example,the temperature dependence of the mole Gibbs free energy of the NC alloy phases with different excess volumes in the nano-grain boundary regions were provided. Based on the model calculations,the relative stability of different phases and the phase transition rules in the NC Sm-Co system were analyzed. It was shown by the calculation results that near the room temperature,some of the NC alloy phases,whose mole Gibbs free energy values change from negative to positive due to the decrease of the nano-grain size,will transform into stable NC alloy phases. This is distinctly different from the phase transformation features in the coarse-grained alloy systems,whose thermodynamic properties are only dependent on the temperature. The experimental results on the phase configuration and the phase stability obtained from the prepared NC Sm-Co alloy confirmed the theoretical predictions of the present thermodynamic model.


Acta Physica Sinica. 2009 58(5): 3280-3286. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3280-3286. article doi:10.7498/aps.58.3280 10.7498/aps.58.3280 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3280 3280-3286
<![CDATA[Electrical properties of carbon nanotube field-effect transistors in applied axial magnetic field]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3287

On the basis of the tight-binding theory,we derived the band structure formula of carbon nanotube field-effect transistors with/without a magnetic field. The results show that the band gap becomes zero periodically with increasing strength of the magnetic field,which indicates that the magnetic field can change the nature of the conductivity of carbon between the metal-type and semiconductor-type with 0.50 for the period. Furthermore,by using Natori theory on the field-effect transistor, we studied the influence of applied magnetic field on the current-voltage characteristics of carbon nanotube field-effect transistors. The results show that in the two types of zigzag and armchair carbon tubes the conductivity oscillates with the voltage and the magnetic field and the oscillation behaviors are obviously different for these two types of carbon nanotubes.


Acta Physica Sinica. 2009 58(5): 3287-3292. Published 2009-05-20 ]]>

On the basis of the tight-binding theory,we derived the band structure formula of carbon nanotube field-effect transistors with/without a magnetic field. The results show that the band gap becomes zero periodically with increasing strength of the magnetic field,which indicates that the magnetic field can change the nature of the conductivity of carbon between the metal-type and semiconductor-type with 0.50 for the period. Furthermore,by using Natori theory on the field-effect transistor, we studied the influence of applied magnetic field on the current-voltage characteristics of carbon nanotube field-effect transistors. The results show that in the two types of zigzag and armchair carbon tubes the conductivity oscillates with the voltage and the magnetic field and the oscillation behaviors are obviously different for these two types of carbon nanotubes.


Acta Physica Sinica. 2009 58(5): 3287-3292. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3287-3292. article doi:10.7498/aps.58.3287 10.7498/aps.58.3287 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3287 3287-3292
<![CDATA[Theoretical prediction of the ability for bulk materials to form single crystals]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3293

In the present paper,two concepts,“defect degree' and “crystallization potential',are introduced for evaluating the defects in crystal and describing the potential field near the crystal surfaces,respectively. Based on vast MD simulations of Ni,Cu,Al and Ar crystal growth from different faces at various temperatures,it is shown that the defect degree decreases with increasing of the crystallization potential,indicating that the crystallization ability is determined uniquely by the crystallization potential,which can be obtained easily even with ab initio calculations. This result suggests a convenient way to evaluate the ability of materials to form perfect single crystals.


Acta Physica Sinica. 2009 58(5): 3293-3301. Published 2009-05-20 ]]>

In the present paper,two concepts,“defect degree' and “crystallization potential',are introduced for evaluating the defects in crystal and describing the potential field near the crystal surfaces,respectively. Based on vast MD simulations of Ni,Cu,Al and Ar crystal growth from different faces at various temperatures,it is shown that the defect degree decreases with increasing of the crystallization potential,indicating that the crystallization ability is determined uniquely by the crystallization potential,which can be obtained easily even with ab initio calculations. This result suggests a convenient way to evaluate the ability of materials to form perfect single crystals.


Acta Physica Sinica. 2009 58(5): 3293-3301. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3293-3301. article doi:10.7498/aps.58.3293 10.7498/aps.58.3293 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3293 3293-3301
<![CDATA[Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3302

6H-SiC single crystal specimens were implanted at 600 K with 100 KeV He ions to three successively increasing fluences and subsequently annealed at different temperatures ranging from 600℃ to 1200℃ in vacuum. After the annealing, the samples were investigated by using Raman scattering spectroscopy and photoluminescence spectrometry,respectively. Both of the two methods showed that the damage induced by helium-ion-implantation in the lattice is closely related to the dose. The thermal annealing brings about recovery of the damage,and different levels of damage require different annealing temperature to recover efficiently. It is indicated that different annealing stages involve different mechanisms,corresponding to recombination of point defects,formation of He-vacancy complexes,and nucleation and coarsening of bubbles,respectively. The experimental results indicate that high temperature implantation is an effective way to avoid amorphization of the implanted layer due to damage accumulation. Helium implantation can be used to introduce buried nanoscale cavities as the nucleation site for the buried oxide in a well defined region proposed for an alternative and more economical method of manufacturing SiC-on-Insulator (SiCOI).


Acta Physica Sinica. 2009 58(5): 3302-3308. Published 2009-05-20 ]]>

6H-SiC single crystal specimens were implanted at 600 K with 100 KeV He ions to three successively increasing fluences and subsequently annealed at different temperatures ranging from 600℃ to 1200℃ in vacuum. After the annealing, the samples were investigated by using Raman scattering spectroscopy and photoluminescence spectrometry,respectively. Both of the two methods showed that the damage induced by helium-ion-implantation in the lattice is closely related to the dose. The thermal annealing brings about recovery of the damage,and different levels of damage require different annealing temperature to recover efficiently. It is indicated that different annealing stages involve different mechanisms,corresponding to recombination of point defects,formation of He-vacancy complexes,and nucleation and coarsening of bubbles,respectively. The experimental results indicate that high temperature implantation is an effective way to avoid amorphization of the implanted layer due to damage accumulation. Helium implantation can be used to introduce buried nanoscale cavities as the nucleation site for the buried oxide in a well defined region proposed for an alternative and more economical method of manufacturing SiC-on-Insulator (SiCOI).


Acta Physica Sinica. 2009 58(5): 3302-3308. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3302-3308. article doi:10.7498/aps.58.3302 10.7498/aps.58.3302 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3302 3302-3308
<![CDATA[Magnatic field induced phase transition and transport properties in phase separated Eu0.5Sr0.5MnO3 system]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3309

The structure,electrical and magnetic properties of the half doping phase separated Eu0.5Sr0.5MnO3 manganite have been systematically studied. The results show that Eu0.5Sr0.5MnO3 compound has the O′ orthorhombic structure and shows typical Jahn-Teller distortion. It is found that ferromagnetic phase turn up near 75 K and evident split of field cooling (FC) and zero field cooling (ZFC) under 4000 A/m is observed around 42 K. The ac susceptibility curve shows also a sharp peak around 42 K,indicating cluster-glass state rather than a spin glass state at 42 K. Meanwhile,throughout the measuring temperature range,the electric transport shows insulating behavior and there is no insulator-metal (I-M) transition. However,an applied magnetic field of 1.6×105 A/m can induce I-M transition. The conducting behavior of Eu0.5Sr0.5MnO3 is well fitted by the Mott variable range hopping (VRH) model. All these phenomena indicate that for the ground state of Eu0.5Sr0.5MnO3,there exists the competition mechanism of several complex magnetic interactions. The study provides abundant experimental information to underdtand the mechanism of the strongly electron correlated system.


Acta Physica Sinica. 2009 58(5): 3309-3314. Published 2009-05-20 ]]>

The structure,electrical and magnetic properties of the half doping phase separated Eu0.5Sr0.5MnO3 manganite have been systematically studied. The results show that Eu0.5Sr0.5MnO3 compound has the O′ orthorhombic structure and shows typical Jahn-Teller distortion. It is found that ferromagnetic phase turn up near 75 K and evident split of field cooling (FC) and zero field cooling (ZFC) under 4000 A/m is observed around 42 K. The ac susceptibility curve shows also a sharp peak around 42 K,indicating cluster-glass state rather than a spin glass state at 42 K. Meanwhile,throughout the measuring temperature range,the electric transport shows insulating behavior and there is no insulator-metal (I-M) transition. However,an applied magnetic field of 1.6×105 A/m can induce I-M transition. The conducting behavior of Eu0.5Sr0.5MnO3 is well fitted by the Mott variable range hopping (VRH) model. All these phenomena indicate that for the ground state of Eu0.5Sr0.5MnO3,there exists the competition mechanism of several complex magnetic interactions. The study provides abundant experimental information to underdtand the mechanism of the strongly electron correlated system.


Acta Physica Sinica. 2009 58(5): 3309-3314. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3309-3314. article doi:10.7498/aps.58.3309 10.7498/aps.58.3309 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3309 3309-3314
<![CDATA[The ignition-proof effect of Ca and Be in Mg alloys]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3315

The atomic cluster models of α-Mg,liquid Mg and the interface between liquid/solid have been founded. The environment-sensitive embedding energy of Ca and Be in α-Mg,liquid Mg,liquid/solid interface has been calculated by recursion method. The atomic affinity energy between Mg,Ca,Be with O has been defined and calculated. The calculated results show that the solid solubility of Ca and Be is very small in α-Mg,because of their higher environment-sensitive embedding energy leads to instability in α-Mg crystal. The Ca and Be diffuse in to the liquid Mg, which has lower environment-sensitive embedding energy than the solid,and congregate on the surface of liquid Mg as the alloys solidify. Because the atomic affinity energy of Ca-O and Be-O is lower than Mg-O,The Ca and Be aggregating on the surface of liquid Mg will priorly combined with O,forming compact oxides of Ca,Be and alloys of elements,which prevent Mg alloys from burning.


Acta Physica Sinica. 2009 58(5): 3315-3318. Published 2009-05-20 ]]>

The atomic cluster models of α-Mg,liquid Mg and the interface between liquid/solid have been founded. The environment-sensitive embedding energy of Ca and Be in α-Mg,liquid Mg,liquid/solid interface has been calculated by recursion method. The atomic affinity energy between Mg,Ca,Be with O has been defined and calculated. The calculated results show that the solid solubility of Ca and Be is very small in α-Mg,because of their higher environment-sensitive embedding energy leads to instability in α-Mg crystal. The Ca and Be diffuse in to the liquid Mg, which has lower environment-sensitive embedding energy than the solid,and congregate on the surface of liquid Mg as the alloys solidify. Because the atomic affinity energy of Ca-O and Be-O is lower than Mg-O,The Ca and Be aggregating on the surface of liquid Mg will priorly combined with O,forming compact oxides of Ca,Be and alloys of elements,which prevent Mg alloys from burning.


Acta Physica Sinica. 2009 58(5): 3315-3318. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3315-3318. article doi:10.7498/aps.58.3315 10.7498/aps.58.3315 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3315 3315-3318
<![CDATA[Electron-theoretical study of grain refining mechanism of Mg alloys]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3319

The electronic parameters,such as the structural energy and atom binding energy of both α-Mg and α-Zr,the Mg/Zr interface energy and surface energy of Mg,as well as the interaction energies between Zr atoms and between Zr and impurity atoms,were calculated by means of recursion method. The calculated results showed that the structural energy and atom binding energy of α-Zr are lower than those of α-Mg,and the Mg/Zr interface energy is lower than the surface energy of Mg,which,in an energetical point,explains the experimental phenomenon. Specifically,Zr particles first crystallize out of the Mg liquid and then act as heterogeneous nucleation sites to refine the Mg grains. The atom interaction energies indicate that the Zr atoms can attract each other to form Zr atom clusters in Mg,and combine with impurity atoms to form compounds,thus weakening the Mg grain refining effect.


Acta Physica Sinica. 2009 58(5): 3319-3323. Published 2009-05-20 ]]>

The electronic parameters,such as the structural energy and atom binding energy of both α-Mg and α-Zr,the Mg/Zr interface energy and surface energy of Mg,as well as the interaction energies between Zr atoms and between Zr and impurity atoms,were calculated by means of recursion method. The calculated results showed that the structural energy and atom binding energy of α-Zr are lower than those of α-Mg,and the Mg/Zr interface energy is lower than the surface energy of Mg,which,in an energetical point,explains the experimental phenomenon. Specifically,Zr particles first crystallize out of the Mg liquid and then act as heterogeneous nucleation sites to refine the Mg grains. The atom interaction energies indicate that the Zr atoms can attract each other to form Zr atom clusters in Mg,and combine with impurity atoms to form compounds,thus weakening the Mg grain refining effect.


Acta Physica Sinica. 2009 58(5): 3319-3323. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3319-3323. article doi:10.7498/aps.58.3319 10.7498/aps.58.3319 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3319 3319-3323
<![CDATA[Electronic and magnetic properties of p,n type dopant and Mn co-doped GaN]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3324

Calculation of electronic structures and magnetic properties of Mg (or Zn\Si\O) and Mn co-doped GaN were carried out by means of first-principle plane-wave pesudopotential (PWP) based on density functional theory. Estimation of Curie temperature was achieved by using Heisenberg model in the mean-field approximation and Zener theory,respectively. The spin polarized impurity bands of deep energy levels are found for several co-doped systems, which are half metallic and suitable for spin injectors. Compared with GaN:Mn,p-type co-doped (GaN:Mn-Mg\Zn) systems exhibit more stable ferromagnetic state and a significant increase in TC. Nevertheless,n-type co-doped (GaN:Mn-Si\O) systems fail to increase the TC and stability of ferromagnetic state.


Acta Physica Sinica. 2009 58(5): 3324-3330. Published 2009-05-20 ]]>

Calculation of electronic structures and magnetic properties of Mg (or Zn\Si\O) and Mn co-doped GaN were carried out by means of first-principle plane-wave pesudopotential (PWP) based on density functional theory. Estimation of Curie temperature was achieved by using Heisenberg model in the mean-field approximation and Zener theory,respectively. The spin polarized impurity bands of deep energy levels are found for several co-doped systems, which are half metallic and suitable for spin injectors. Compared with GaN:Mn,p-type co-doped (GaN:Mn-Mg\Zn) systems exhibit more stable ferromagnetic state and a significant increase in TC. Nevertheless,n-type co-doped (GaN:Mn-Si\O) systems fail to increase the TC and stability of ferromagnetic state.


Acta Physica Sinica. 2009 58(5): 3324-3330. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3324-3330. article doi:10.7498/aps.58.3324 10.7498/aps.58.3324 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3324 3324-3330
<![CDATA[Density functional theory study of rhodium adsorption on single-wall carbon nanotubes]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3331

Rhodium adsorption on (6, 6) single-walled carbon nanotubes (SWCNTs) was systematically investigated by density functional theory (DFT). According to the analysis of adsorption configurations and adsorption energies, it is found that the most stable configurations are I-H1, I-H2, O-H1, O-H2 and O-B1. The adsorption energy of O-H2 is -2.29?eV, which is 0.49?eV higher than that of I-H2. This might be attributed to the graphite's winding effect, which the well-proportioned charge density on the graphite redistributes during the formation process of SWCNTs and then induces more charge to the outside of SWCNTs than the inside. Based on the partial density of states (PDOS) and Mulliken charge analysis, it is found that 5s electrons of Rh transfer to 4d orbit, while 4d electrons transfer to SWCNTs. Therefore, the Rh atom is positively charged, while the (6, 6) SWCNTs is negatively charged. Combining the PDOS calculations with the band structure results, the magnetism of Rh adsorbed outside of SWCNTs is higher than that inside SWCNTs.


Acta Physica Sinica. 2009 58(5): 3331-3337. Published 2009-05-20 ]]>

Rhodium adsorption on (6, 6) single-walled carbon nanotubes (SWCNTs) was systematically investigated by density functional theory (DFT). According to the analysis of adsorption configurations and adsorption energies, it is found that the most stable configurations are I-H1, I-H2, O-H1, O-H2 and O-B1. The adsorption energy of O-H2 is -2.29?eV, which is 0.49?eV higher than that of I-H2. This might be attributed to the graphite's winding effect, which the well-proportioned charge density on the graphite redistributes during the formation process of SWCNTs and then induces more charge to the outside of SWCNTs than the inside. Based on the partial density of states (PDOS) and Mulliken charge analysis, it is found that 5s electrons of Rh transfer to 4d orbit, while 4d electrons transfer to SWCNTs. Therefore, the Rh atom is positively charged, while the (6, 6) SWCNTs is negatively charged. Combining the PDOS calculations with the band structure results, the magnetism of Rh adsorbed outside of SWCNTs is higher than that inside SWCNTs.


Acta Physica Sinica. 2009 58(5): 3331-3337. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3331-3337. article doi:10.7498/aps.58.3331 10.7498/aps.58.3331 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3331 3331-3337
<![CDATA[The geometrical structure, electronic structure and magnetism of bimetallic AunM2 (n=1,2; M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni) clusters]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3338

The geometrical structure, stability, electronic structure and magnetism of bimetallic clusters AuM2 and Au2M2, where M is 3d transition metal element, are investigated systematically by using the first-principles method based on density functional theory. In contrast to semiconductor clusters, the bimetallic clusters consisting of Au and transition metal elements usually form a large number of low-energy isomers, some of which are very similar in structure. Similar to the pure transition metal cluster, AuM2 and Au2M2 clusters also display dramatic magnetism. The magnetic moment of transition metal element in AuM2 and Au2M2 clusters is either enhanced or weakened with respect to the bulk value, which is closely dependent on the orbital splitting. For the ground state, the magnetic moments of two transition metal elements in AuCr2, Au2Cr2 and Au2Mn2 clusters are anti-parallel, and those in other clusters are parallel.


Acta Physica Sinica. 2009 58(5): 3338-3351. Published 2009-05-20 ]]>

The geometrical structure, stability, electronic structure and magnetism of bimetallic clusters AuM2 and Au2M2, where M is 3d transition metal element, are investigated systematically by using the first-principles method based on density functional theory. In contrast to semiconductor clusters, the bimetallic clusters consisting of Au and transition metal elements usually form a large number of low-energy isomers, some of which are very similar in structure. Similar to the pure transition metal cluster, AuM2 and Au2M2 clusters also display dramatic magnetism. The magnetic moment of transition metal element in AuM2 and Au2M2 clusters is either enhanced or weakened with respect to the bulk value, which is closely dependent on the orbital splitting. For the ground state, the magnetic moments of two transition metal elements in AuCr2, Au2Cr2 and Au2Mn2 clusters are anti-parallel, and those in other clusters are parallel.


Acta Physica Sinica. 2009 58(5): 3338-3351. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3338-3351. article doi:10.7498/aps.58.3338 10.7498/aps.58.3338 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3338 3338-3351
<![CDATA[First principles study of H2O molecule adsorption on Fe(100), Fe(110) and Fe(111) surfaces]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3352

The adsorption of H2O on Fe(100), Fe(110) and Fe(111) crystal surfaces were studied by first principles. The calculation results indicate that H2O monomers bind preferentially at top sites and lie nearly flat on the three crystal surfaces. The results of adsorption energy and geometry structure show that the effect of H2O adsorbed on three iron crystal surfaces is different. The strongest interaction occurred between H2O and Fe(111) crystal surface and the weakest interaction is between H2O and Fe(110) crystal surface. Such relationship is related to the different surface atoms density. The similar conclusion can be drawn from the calculation results of electronic structure and Mulliken analysis. The Mulliken analysis also indicates that when H2O is adsorbed on the iron surface, charge exchange between O atom and Fe atom make the iron surface negatively charged and reduce the surface potential, which promote the electrochemical corrosion of iron surfaces.


Acta Physica Sinica. 2009 58(5): 3352-3358. Published 2009-05-20 ]]>

The adsorption of H2O on Fe(100), Fe(110) and Fe(111) crystal surfaces were studied by first principles. The calculation results indicate that H2O monomers bind preferentially at top sites and lie nearly flat on the three crystal surfaces. The results of adsorption energy and geometry structure show that the effect of H2O adsorbed on three iron crystal surfaces is different. The strongest interaction occurred between H2O and Fe(111) crystal surface and the weakest interaction is between H2O and Fe(110) crystal surface. Such relationship is related to the different surface atoms density. The similar conclusion can be drawn from the calculation results of electronic structure and Mulliken analysis. The Mulliken analysis also indicates that when H2O is adsorbed on the iron surface, charge exchange between O atom and Fe atom make the iron surface negatively charged and reduce the surface potential, which promote the electrochemical corrosion of iron surfaces.


Acta Physica Sinica. 2009 58(5): 3352-3358. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3352-3358. article doi:10.7498/aps.58.3352 10.7498/aps.58.3352 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3352 3352-3358
<![CDATA[Study of corrosion effect of Pt on Ti alloys by recursion method]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3359

The electronic structure parameters of pure Ti and TiPt alloy, such as density of states, Fermi energy level, environment-sensitive embedding energy and order energy have been calculated by recursion method. The environment-sensitive embedding energy induced by Pt in Ti crystal is greater than that on Ti surface, so Pt is prone to gather on Ti surface. The order energy between Pt atoms is positive, which leads Pt atoms to form intermetallics with bulk Ti atoms. The electric potential of intermetallics is lower than that of Ti atom cluster at Ti alloy surface, so cells will form between intermetallics and Ti atom clusters, then the intermetallic will decompose in corrosive medium. With the deposition of Pt, a rough electrocatalytic Pt layer would form on the surface of Ti alloy. This electrocatalytic Pt layer enhances the passivation of Ti alloy and improves the corrosion resistance of Ti alloy.


Acta Physica Sinica. 2009 58(5): 3359-3363. Published 2009-05-20 ]]>

The electronic structure parameters of pure Ti and TiPt alloy, such as density of states, Fermi energy level, environment-sensitive embedding energy and order energy have been calculated by recursion method. The environment-sensitive embedding energy induced by Pt in Ti crystal is greater than that on Ti surface, so Pt is prone to gather on Ti surface. The order energy between Pt atoms is positive, which leads Pt atoms to form intermetallics with bulk Ti atoms. The electric potential of intermetallics is lower than that of Ti atom cluster at Ti alloy surface, so cells will form between intermetallics and Ti atom clusters, then the intermetallic will decompose in corrosive medium. With the deposition of Pt, a rough electrocatalytic Pt layer would form on the surface of Ti alloy. This electrocatalytic Pt layer enhances the passivation of Ti alloy and improves the corrosion resistance of Ti alloy.


Acta Physica Sinica. 2009 58(5): 3359-3363. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3359-3363. article doi:10.7498/aps.58.3359 10.7498/aps.58.3359 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3359 3359-3363
<![CDATA[Electronic theory study of interface characteristic of magnesium/carbon nanotube with nickel]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3364

The atomic cluster models of Mg/CNT(carbon nanotube or nickel carbon nanotube) interface have been built in magnesium composite reinforced by (nickel) carbon nanotube. The interface electronic structures have been calculated by recursion method. The calculated results show that nickel enhances the stability of nanotube/matrix interface, improves the interface bond strength, since nickel makes the structure energy and atomic binding energy of nanotube/matrix interface lowered. The positive interaction energy of magnesium atoms in nickel film of interface causes the magnesium atoms in nickel film to repel each other and can not form magnesium atomic cluster, so they prefer to form ordering phase which consolidate the interface. The carbon and magnesium atoms have higher energy of position, which causes interface instability and flimsiness at carbon nanotube without nickel plating and magnesium interface. But when the carbon nanotubes have been plated by nickel, the energy of position of carbon and magnesium atoms are made lower and the interface gets more stable and tough.


Acta Physica Sinica. 2009 58(5): 3364-3369. Published 2009-05-20 ]]>

The atomic cluster models of Mg/CNT(carbon nanotube or nickel carbon nanotube) interface have been built in magnesium composite reinforced by (nickel) carbon nanotube. The interface electronic structures have been calculated by recursion method. The calculated results show that nickel enhances the stability of nanotube/matrix interface, improves the interface bond strength, since nickel makes the structure energy and atomic binding energy of nanotube/matrix interface lowered. The positive interaction energy of magnesium atoms in nickel film of interface causes the magnesium atoms in nickel film to repel each other and can not form magnesium atomic cluster, so they prefer to form ordering phase which consolidate the interface. The carbon and magnesium atoms have higher energy of position, which causes interface instability and flimsiness at carbon nanotube without nickel plating and magnesium interface. But when the carbon nanotubes have been plated by nickel, the energy of position of carbon and magnesium atoms are made lower and the interface gets more stable and tough.


Acta Physica Sinica. 2009 58(5): 3364-3369. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3364-3369. article doi:10.7498/aps.58.3364 10.7498/aps.58.3364 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3364 3364-3369
<![CDATA[The structural and electronic properties of the unconventional exohedral fullerene C64Si]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3370

The generalized gradient approximation based on density functional theory is used to analyze the structural and electronic properties of the unconventional exohedral fullerene C64Si. It is found that among four possible stable isomers, the structure with the single Si atom situated at the vertex of the directly fused pentagons, i.e., C64Si-1, is the most stable, which agrees well with the stable position of Si outside the C28 cage proposed by Ge et al. By analyzing the energy levels, orbital wave functions and density of states of both C64 and C64Si-1, Si atom is found to have greater contribution to the lowest unoccupied molecular orbital, but contribute less to the highest occupied molecular orbital. In addition, the effect of Si on the total density of states of C64 is very small. It is found from the vertical ionization potential and the vertical affinity that the ability for both detaching and obtaining electrons is decreased after the exohedral absorbing Si atom.


Acta Physica Sinica. 2009 58(5): 3370-3376. Published 2009-05-20 ]]>

The generalized gradient approximation based on density functional theory is used to analyze the structural and electronic properties of the unconventional exohedral fullerene C64Si. It is found that among four possible stable isomers, the structure with the single Si atom situated at the vertex of the directly fused pentagons, i.e., C64Si-1, is the most stable, which agrees well with the stable position of Si outside the C28 cage proposed by Ge et al. By analyzing the energy levels, orbital wave functions and density of states of both C64 and C64Si-1, Si atom is found to have greater contribution to the lowest unoccupied molecular orbital, but contribute less to the highest occupied molecular orbital. In addition, the effect of Si on the total density of states of C64 is very small. It is found from the vertical ionization potential and the vertical affinity that the ability for both detaching and obtaining electrons is decreased after the exohedral absorbing Si atom.


Acta Physica Sinica. 2009 58(5): 3370-3376. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3370-3376. article doi:10.7498/aps.58.3370 10.7498/aps.58.3370 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3370 3370-3376
<![CDATA[Optical properties of amorphous GaN films deposited by sputtering]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3377

The amorphous GaN(a-GaN) films are deposited by direct current planar magnetron sputtering in different compositions of argon-nitrogen mixtures. X-ray diffraction patterns and the Raman spectra indicate that the films have amorphous structures. Spectroscopic ellipsometry shows that the refractive index and the film thickness increase with increasing argon content. The UV-Vis spectra indicate that the band gap of the film deposited without argon is 3.90eV, which is much larger than that of crystalline GaN (c-GaN), owing to the structural disorder. When the films are deposited at higher argon content, the band gap becomes much smaller (2.80—3.30eV), probably because of more excessive Ga in the films. The band tails extending to lower energies are modeled. Two parameters representing the energy broadening of the electronic transitions and the width or slope of the exponential tail are 0.257—0.338eV and 1.44—1.89?eV, respectively, which are higher than that of c-GaN films, indicating that a-GaN films have wider absorption tails than the c-GaN films. Photoluminescence peak at 360 nm observed at room temperature comes from band_to_band emission.


Acta Physica Sinica. 2009 58(5): 3377-3382. Published 2009-05-20 ]]>

The amorphous GaN(a-GaN) films are deposited by direct current planar magnetron sputtering in different compositions of argon-nitrogen mixtures. X-ray diffraction patterns and the Raman spectra indicate that the films have amorphous structures. Spectroscopic ellipsometry shows that the refractive index and the film thickness increase with increasing argon content. The UV-Vis spectra indicate that the band gap of the film deposited without argon is 3.90eV, which is much larger than that of crystalline GaN (c-GaN), owing to the structural disorder. When the films are deposited at higher argon content, the band gap becomes much smaller (2.80—3.30eV), probably because of more excessive Ga in the films. The band tails extending to lower energies are modeled. Two parameters representing the energy broadening of the electronic transitions and the width or slope of the exponential tail are 0.257—0.338eV and 1.44—1.89?eV, respectively, which are higher than that of c-GaN films, indicating that a-GaN films have wider absorption tails than the c-GaN films. Photoluminescence peak at 360 nm observed at room temperature comes from band_to_band emission.


Acta Physica Sinica. 2009 58(5): 3377-3382. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3377-3382. article doi:10.7498/aps.58.3377 10.7498/aps.58.3377 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3377 3377-3382
<![CDATA[Calculation of field enhancement factor of gated nanowire]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3383

To estimate the field enhancement factor of the gated nanowire, the image charge model of floating sphere between parallel gate and cathode plates is proposed. The field enhancement factor of the gated nanowire is expressed by β=1/2(3.5+L/r0+W), where L and r0 are the length and tip radius of nanowire, respectively, and W is a function of the gate-hole radius R, gate-cathode distance d and the geometrical parameters of the nanowire. The calculation results show that the influence of the aspect ratio of the nanowire on the enhancement factor is remarkable, i.e., the enhancement factor increases rapidly with the increase of the length and top curvature of the nanowire. Furthermore, the enhancement factor decreases with the increase of the gate-cathode distance and is equal to β0=3.5+L/r0 when the gate-cathode distance tends to infinite. The smaller the gate-hole radius, the larger the enhancement factor, and the enhancement factor will be equal to β=β0+1.202(L/d)3 when the gate-hole radius tends to zero.


Acta Physica Sinica. 2009 58(5): 3383-3389. Published 2009-05-20 ]]>

To estimate the field enhancement factor of the gated nanowire, the image charge model of floating sphere between parallel gate and cathode plates is proposed. The field enhancement factor of the gated nanowire is expressed by β=1/2(3.5+L/r0+W), where L and r0 are the length and tip radius of nanowire, respectively, and W is a function of the gate-hole radius R, gate-cathode distance d and the geometrical parameters of the nanowire. The calculation results show that the influence of the aspect ratio of the nanowire on the enhancement factor is remarkable, i.e., the enhancement factor increases rapidly with the increase of the length and top curvature of the nanowire. Furthermore, the enhancement factor decreases with the increase of the gate-cathode distance and is equal to β0=3.5+L/r0 when the gate-cathode distance tends to infinite. The smaller the gate-hole radius, the larger the enhancement factor, and the enhancement factor will be equal to β=β0+1.202(L/d)3 when the gate-hole radius tends to zero.


Acta Physica Sinica. 2009 58(5): 3383-3389. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3383-3389. article doi:10.7498/aps.58.3383 10.7498/aps.58.3383 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3383 3383-3389
<![CDATA[Spin-dependent transport through a multi-electrodes controlled by an Aharonov-Bohm ring]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3390

The multi-terminal quantum transport in a dot-array through an AB ring is studied via single-band tight-binding Hamiltonian. It is shown that the output spin current is a periodic function of the magnetic flux in the quantum unit Φ0. Moreover, we can get the spin current with contrary spin polarization in the same energy range in different terminals.


Acta Physica Sinica. 2009 58(5): 3390-3396. Published 2009-05-20 ]]>

The multi-terminal quantum transport in a dot-array through an AB ring is studied via single-band tight-binding Hamiltonian. It is shown that the output spin current is a periodic function of the magnetic flux in the quantum unit Φ0. Moreover, we can get the spin current with contrary spin polarization in the same energy range in different terminals.


Acta Physica Sinica. 2009 58(5): 3390-3396. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3390-3396. article doi:10.7498/aps.58.3390 10.7498/aps.58.3390 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3390 3390-3396
<![CDATA[Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3397

The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostructure, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.


Acta Physica Sinica. 2009 58(5): 3397-3401. Published 2009-05-20 ]]>

The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostructure, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.


Acta Physica Sinica. 2009 58(5): 3397-3401. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3397-3401. article doi:10.7498/aps.58.3397 10.7498/aps.58.3397 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3397 3397-3401
<![CDATA[Preparation and electrical properties of the novel mixed ionic-electronic conductors Sm0.9Ca0.1Al1-xMnxO3]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3402

The novel mixed ionic-electronic conductors Sm0.9Ca0.1Al1-xMnxO3 (SCAM, x= 0.1—0.5) were prepared by the organic gel method combined with solid state sintering technology. The thermal decomposition and phase inversion process of the gel precursors, crystal strucutres and phase stability of the sinters were studied by using thermogravimetric and differential thermal analysis (TG-DTA) and X-ray diffraction. The electrical conductivities of sintered ceramics in both air and 5%H2/Ar were measured by the direct current four-wire method. The experimental results show that the well-crystallized nanopowders with tetragonal perovskite structure can be obtained after calcining the gel precursors at 900℃ for 5h, the phase stability of SCAM ceramics decreases with increasing Mn content under reduction atmosphere. The electrical conductivity of SCAM ceramics is dominated by p-type electronic conduction and increases with Mn content and temperature. The mechanism of electronic transport is the hopping of p-type small polaron. With increasing calcination temperature and prolonging holding time, both the electrical conductivity and relative density of SCAM9155 become large initially and then decrease. The SCAM9155 sample sintered at 1600℃ for 10h has the highest relative density of 98.2% and electrical conductivity reaching 7.30S/cm in air and 1.91S/cm in 5%H2/Ar at 850℃. The apparent activation energies for SCAM9155 in air and in 5%H2/Ar were calculated to be 0.273 and 0.371eV, respectively. The Ca- and Mn-substituted SmAlO3 with relatively high conductivity may be used as a potential anode material for solid oxide full cells (SOFCs).


Acta Physica Sinica. 2009 58(5): 3402-3408. Published 2009-05-20 ]]>

The novel mixed ionic-electronic conductors Sm0.9Ca0.1Al1-xMnxO3 (SCAM, x= 0.1—0.5) were prepared by the organic gel method combined with solid state sintering technology. The thermal decomposition and phase inversion process of the gel precursors, crystal strucutres and phase stability of the sinters were studied by using thermogravimetric and differential thermal analysis (TG-DTA) and X-ray diffraction. The electrical conductivities of sintered ceramics in both air and 5%H2/Ar were measured by the direct current four-wire method. The experimental results show that the well-crystallized nanopowders with tetragonal perovskite structure can be obtained after calcining the gel precursors at 900℃ for 5h, the phase stability of SCAM ceramics decreases with increasing Mn content under reduction atmosphere. The electrical conductivity of SCAM ceramics is dominated by p-type electronic conduction and increases with Mn content and temperature. The mechanism of electronic transport is the hopping of p-type small polaron. With increasing calcination temperature and prolonging holding time, both the electrical conductivity and relative density of SCAM9155 become large initially and then decrease. The SCAM9155 sample sintered at 1600℃ for 10h has the highest relative density of 98.2% and electrical conductivity reaching 7.30S/cm in air and 1.91S/cm in 5%H2/Ar at 850℃. The apparent activation energies for SCAM9155 in air and in 5%H2/Ar were calculated to be 0.273 and 0.371eV, respectively. The Ca- and Mn-substituted SmAlO3 with relatively high conductivity may be used as a potential anode material for solid oxide full cells (SOFCs).


Acta Physica Sinica. 2009 58(5): 3402-3408. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3402-3408. article doi:10.7498/aps.58.3402 10.7498/aps.58.3402 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3402 3402-3408
<![CDATA[The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3409

The one-dimensional self-consistent simulation of the band diagram and carrier distribution of the AlGaN/GaN double hetero-structure is firstly carried out to research the effect of the thickness and Al content of the AlGaN back-barrier layer on the carrier distribution. Then the AlGaN/GaN double hetero-structure materials with different back-barrier layers were grown by low-pressure MOCVD method on c-plane sapphire substrate. The mercury probe CV measurement was carried out to verify the results of theoretical simulation. The results of theoretical simulation and experiment both indicate that with the increase of Al content and thickness of the AlGaN back-barrier layer, the two-dimensional electron Gas density becomes low in the main channel and high in the parasitic channel gradually.The increase of Al content and thickness of the AlGaN back-barrier layer effectively enhances the two-dimensional electron Gas confinement but simultaneity produces higher-density parasitic channel. So a compromise has to be made between the improvement of the two-dimensional electron Gas confinement and the restraint of the carrier density in parasitic channel in designing the double heterostructure.


Acta Physica Sinica. 2009 58(5): 3409-3415. Published 2009-05-20 ]]>

The one-dimensional self-consistent simulation of the band diagram and carrier distribution of the AlGaN/GaN double hetero-structure is firstly carried out to research the effect of the thickness and Al content of the AlGaN back-barrier layer on the carrier distribution. Then the AlGaN/GaN double hetero-structure materials with different back-barrier layers were grown by low-pressure MOCVD method on c-plane sapphire substrate. The mercury probe CV measurement was carried out to verify the results of theoretical simulation. The results of theoretical simulation and experiment both indicate that with the increase of Al content and thickness of the AlGaN back-barrier layer, the two-dimensional electron Gas density becomes low in the main channel and high in the parasitic channel gradually.The increase of Al content and thickness of the AlGaN back-barrier layer effectively enhances the two-dimensional electron Gas confinement but simultaneity produces higher-density parasitic channel. So a compromise has to be made between the improvement of the two-dimensional electron Gas confinement and the restraint of the carrier density in parasitic channel in designing the double heterostructure.


Acta Physica Sinica. 2009 58(5): 3409-3415. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3409-3415. article doi:10.7498/aps.58.3409 10.7498/aps.58.3409 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3409 3409-3415
<![CDATA[Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3416

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2×1010cm-2 and 6.3×1010cm-2 are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9×1018cm-3 and 1.2×1018cm-3 are obtained by room temperature Hall effect measurement. VN is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05meV and 5.58meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.


Acta Physica Sinica. 2009 58(5): 3416-3420. Published 2009-05-20 ]]>

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2×1010cm-2 and 6.3×1010cm-2 are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9×1018cm-3 and 1.2×1018cm-3 are obtained by room temperature Hall effect measurement. VN is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05meV and 5.58meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.


Acta Physica Sinica. 2009 58(5): 3416-3420. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3416-3420. article doi:10.7498/aps.58.3416 10.7498/aps.58.3416 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3416 3416-3420
<![CDATA[Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3421

A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.


Acta Physica Sinica. 2009 58(5): 3421-3426. Published 2009-05-20 ]]>

A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.


Acta Physica Sinica. 2009 58(5): 3421-3426. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3421-3426. article doi:10.7498/aps.58.3421 10.7498/aps.58.3421 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3421 3421-3426
<![CDATA[Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3427

Vertical light-emitting transistor is a kind of optoelectronic devices combining characteristics of light-emitting and the “on/off” function of transistor, and its channel length can be reduced to nanometers to make it operate at low voltages and high speeds. Holes and electrons injected from source and drain electrodes form excitons in the emissive layer and radiate light. The amount of charge carriers can be controlled by the gate voltage, consequently to control the intensity of light emission. In this paper, by inserting a thin hole-transporting BCP layer at different locations in the device ITO/NPB(40nm)/Al(30nm)/NPB(20nm)/Alq3(55nm)/Al, we explored the reasons of large drain current and the detailed carriers processes in the device by studying the variation of their optoelectronic characteristics. Our experimental data confirmed that holes injected from central Al gate contribute to the current in the channel. Further, LiF thin film was used as a buffer layer to modify the drain electrode, in this way to improve electron injection and reduce drain current. As a result, relatively stable light-emitting transistors were obtained with significant enhancement in light emission, and the emission intensity can be controlled by the gate voltage. The color of the emission light can easily be tuned by using different luminescent materials.


Acta Physica Sinica. 2009 58(5): 3427-3432. Published 2009-05-20 ]]>

Vertical light-emitting transistor is a kind of optoelectronic devices combining characteristics of light-emitting and the “on/off” function of transistor, and its channel length can be reduced to nanometers to make it operate at low voltages and high speeds. Holes and electrons injected from source and drain electrodes form excitons in the emissive layer and radiate light. The amount of charge carriers can be controlled by the gate voltage, consequently to control the intensity of light emission. In this paper, by inserting a thin hole-transporting BCP layer at different locations in the device ITO/NPB(40nm)/Al(30nm)/NPB(20nm)/Alq3(55nm)/Al, we explored the reasons of large drain current and the detailed carriers processes in the device by studying the variation of their optoelectronic characteristics. Our experimental data confirmed that holes injected from central Al gate contribute to the current in the channel. Further, LiF thin film was used as a buffer layer to modify the drain electrode, in this way to improve electron injection and reduce drain current. As a result, relatively stable light-emitting transistors were obtained with significant enhancement in light emission, and the emission intensity can be controlled by the gate voltage. The color of the emission light can easily be tuned by using different luminescent materials.


Acta Physica Sinica. 2009 58(5): 3427-3432. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3427-3432. article doi:10.7498/aps.58.3427 10.7498/aps.58.3427 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3427 3427-3432
<![CDATA[Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectric]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3433

Based on atomic-layer-deposited high permittivity HfO2 films on both Ta and TaN substrates, we compare the influence of different bottom electrodes on electrical performance of metal-insulator-metal (MIM) capacitors. The experimental results indicate that the TaN bottom electrode can give higher capacitance density (7.47?fF/μm2) and smaller voltage coefficients of capacitance (356ppm/V2 and 493ppm/V), which are attributed to the high quality interface between TaN bottom electrode and HfO2 dielectric films. Moreover, a low leakage current of ~5×10-8A/cm2 at 3V is achieved for both types of capacitors, and TaN bottom electrode-based MIM capacitors exhibit higher breakdown field. Finally, the conduction mechanism of the TaN-based capacitor is studied, showing a Schottky emission at room temperature.


Acta Physica Sinica. 2009 58(5): 3433-3436. Published 2009-05-20 ]]>

Based on atomic-layer-deposited high permittivity HfO2 films on both Ta and TaN substrates, we compare the influence of different bottom electrodes on electrical performance of metal-insulator-metal (MIM) capacitors. The experimental results indicate that the TaN bottom electrode can give higher capacitance density (7.47?fF/μm2) and smaller voltage coefficients of capacitance (356ppm/V2 and 493ppm/V), which are attributed to the high quality interface between TaN bottom electrode and HfO2 dielectric films. Moreover, a low leakage current of ~5×10-8A/cm2 at 3V is achieved for both types of capacitors, and TaN bottom electrode-based MIM capacitors exhibit higher breakdown field. Finally, the conduction mechanism of the TaN-based capacitor is studied, showing a Schottky emission at room temperature.


Acta Physica Sinica. 2009 58(5): 3433-3436. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3433-3436. article doi:10.7498/aps.58.3433 10.7498/aps.58.3433 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3433 3433-3436
<![CDATA[Magnetic-electric controllable spin transport in semiconductors superlattic]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3437

By solving electron tunneling problem in semiconductor superlattice, the magnetic-electric controllable spin transport is theoretically investigated.The results show that, with magnetic modulation only,the spin transmission will separate, and with the magnetic filed increasing,the conductance polarization is enhanced and its peaks are widened. By both magnetic and single interval electric barrier modulation,the conductance polarization will be evidently improved; and at the same time,there are two distinct transport regions for different electric modulation, in which the down-spin electron obeys different change rules with different electric filed.However,applying electric modulation at intervals of two periods on the magnetic superlattic,it is noticed that the critical behavior of electron spin transport disappears,and the resonant peak of the conductance polarization also degenerates in the high energy region.These results show that the symmetry is an important factor for spin transport in the semiconductor superlattice.


Acta Physica Sinica. 2009 58(5): 3437-3442. Published 2009-05-20 ]]>

By solving electron tunneling problem in semiconductor superlattice, the magnetic-electric controllable spin transport is theoretically investigated.The results show that, with magnetic modulation only,the spin transmission will separate, and with the magnetic filed increasing,the conductance polarization is enhanced and its peaks are widened. By both magnetic and single interval electric barrier modulation,the conductance polarization will be evidently improved; and at the same time,there are two distinct transport regions for different electric modulation, in which the down-spin electron obeys different change rules with different electric filed.However,applying electric modulation at intervals of two periods on the magnetic superlattic,it is noticed that the critical behavior of electron spin transport disappears,and the resonant peak of the conductance polarization also degenerates in the high energy region.These results show that the symmetry is an important factor for spin transport in the semiconductor superlattice.


Acta Physica Sinica. 2009 58(5): 3437-3442. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3437-3442. article doi:10.7498/aps.58.3437 10.7498/aps.58.3437 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3437 3437-3442
<![CDATA[Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3443

The effect of hydrofluoric acid (HF) etching time on Ni/6H-SiC ohmic contacts was investigated. The as-deposited Ni/6H-SiC contacts prepared by 6H-SiC substrates which have been subjected to different HF etching time have different I-V characteristics. For SiC substrates etched for less than 12 hours, the contacts were rectifying, and excellent linear curves were observed after high temperature thermal annealing.X_ray diffraction, Auger electronic spectroscopy and low_energy reflection electron energy loss spectroscopy showed that Ni2Si and amorphous C were the main reaction products after annealing.For SiC substrate etched for 24 hours, the as-deposited Ni/6H-SiC contact was ohmic. The carbon-enriched layer (CEL) on the SiC surface plays an important role in the formation of ohmic contact.


Acta Physica Sinica. 2009 58(5): 3443-3447. Published 2009-05-20 ]]>

The effect of hydrofluoric acid (HF) etching time on Ni/6H-SiC ohmic contacts was investigated. The as-deposited Ni/6H-SiC contacts prepared by 6H-SiC substrates which have been subjected to different HF etching time have different I-V characteristics. For SiC substrates etched for less than 12 hours, the contacts were rectifying, and excellent linear curves were observed after high temperature thermal annealing.X_ray diffraction, Auger electronic spectroscopy and low_energy reflection electron energy loss spectroscopy showed that Ni2Si and amorphous C were the main reaction products after annealing.For SiC substrate etched for 24 hours, the as-deposited Ni/6H-SiC contact was ohmic. The carbon-enriched layer (CEL) on the SiC surface plays an important role in the formation of ohmic contact.


Acta Physica Sinica. 2009 58(5): 3443-3447. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3443-3447. article doi:10.7498/aps.58.3443 10.7498/aps.58.3443 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3443 3443-3447
<![CDATA[Properties of spin transport of double quantum rings with structures of ferromagnet/ semiconductor/ ferromagnet]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3448

Spin-dependent transport through ferromagnetic/semiconductor/ferromagnetic double quantum rings is studied in this paper. It is found that the average value of the spin-dependent electron transmission coefficient of the double quantum ring is larger than that of the single quantum ring under the condition of zero magnetic flux and antiparallel configration of the ferromagnetic electrodes. When the magnetization directions of the ferromagnetic electrodes are parallel, the average tunneling coefficient of the spin-down electrons in double quantum rings increases distinctly. When the Rashba spin-orbit coupling is considered, the average tunneling coefficient of the spin electrons in double quantum rings is bigger than that in single quantum ring. The applied magnetic field enhences the tunneling coefficient. The δ barrier of the double quantum rings suspresses the tunneling of the electron. The tunneling coefficient decreases monotonically and nonlinearly with the δ barrier strength Z increasing.


Acta Physica Sinica. 2009 58(5): 3448-3455. Published 2009-05-20 ]]>

Spin-dependent transport through ferromagnetic/semiconductor/ferromagnetic double quantum rings is studied in this paper. It is found that the average value of the spin-dependent electron transmission coefficient of the double quantum ring is larger than that of the single quantum ring under the condition of zero magnetic flux and antiparallel configration of the ferromagnetic electrodes. When the magnetization directions of the ferromagnetic electrodes are parallel, the average tunneling coefficient of the spin-down electrons in double quantum rings increases distinctly. When the Rashba spin-orbit coupling is considered, the average tunneling coefficient of the spin electrons in double quantum rings is bigger than that in single quantum ring. The applied magnetic field enhences the tunneling coefficient. The δ barrier of the double quantum rings suspresses the tunneling of the electron. The tunneling coefficient decreases monotonically and nonlinearly with the δ barrier strength Z increasing.


Acta Physica Sinica. 2009 58(5): 3448-3455. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3448-3455. article doi:10.7498/aps.58.3448 10.7498/aps.58.3448 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3448 3448-3455
<![CDATA[Hole transport in polymer P3HT with different annealing temperatures]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3456

Hole only devices were fabricated with the structure of ITO/PEDOT/P3HT (poly(3-hexylthiophene))/Ag. The capacitance-frequency characteristics of samples annealed at different temperatures were investigated by admittance spectroscopy technique. Hole mobilities were calculated and it was found that the hole mobility could be pronouncedly influenced by annealing. The hole mobility was enhanced to the 10-3 cm2/Vs order after annealing, while the hole mobility of the unannealed sample was just of 10-4 cm2/Vs order. The hole mobility of the annealed sample is almost unchanged under different electric field. In contrast, the hole mobility of the annealed sample showed relatively significant change with the electric field.


Acta Physica Sinica. 2009 58(5): 3456-3460. Published 2009-05-20 ]]>

Hole only devices were fabricated with the structure of ITO/PEDOT/P3HT (poly(3-hexylthiophene))/Ag. The capacitance-frequency characteristics of samples annealed at different temperatures were investigated by admittance spectroscopy technique. Hole mobilities were calculated and it was found that the hole mobility could be pronouncedly influenced by annealing. The hole mobility was enhanced to the 10-3 cm2/Vs order after annealing, while the hole mobility of the unannealed sample was just of 10-4 cm2/Vs order. The hole mobility of the annealed sample is almost unchanged under different electric field. In contrast, the hole mobility of the annealed sample showed relatively significant change with the electric field.


Acta Physica Sinica. 2009 58(5): 3456-3460. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3456-3460. article doi:10.7498/aps.58.3456 10.7498/aps.58.3456 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3456 3456-3460
<![CDATA[Influence of fabrication technique on structure and photoluminescence of Zn1-xMgxO thin films]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3461

Single-crystalline Zn1-xMgxO thin films with c-axis orientation have been deposited on Si(100) substrate by pulsed lser deposition. The effect of the thickness, Mg content, annealing temperature and oxygen atmosphere on the structure, morphology and photoluminescence of the Zn1-xMgxO thin films are studied by X-ray diffraction,atomic force microscopy,scanning electron microscopy and photoluminescence spectra. The results indicate that the hexagonal wurtzite type of Zn1-xMgxO can be stabilized up to Mg content xx≤0.35.The grain size of the samples increased by the post_annealing, and the structure of the Zn0.75Mg0.25O film changed from cubic to hexagonal wurtzite type when annealed at 600℃. An appropriate oxygen pressure can reduce both the number of defects and the c-axis stress. But superfluous oxygen is apt to combine with Mg and hinders the growth of hexagonal wurtzite type ZnO. Photoluminescence spectrum indicates that the defect_level peak is mainly related with the zinc vacancy, substitutional O on the zinc site (OZn) and interstitial oxygen vacancies (Oi), and the ultraviolet emission peak has a blue shift due to annealing.


Acta Physica Sinica. 2009 58(5): 3461-3467. Published 2009-05-20 ]]>

Single-crystalline Zn1-xMgxO thin films with c-axis orientation have been deposited on Si(100) substrate by pulsed lser deposition. The effect of the thickness, Mg content, annealing temperature and oxygen atmosphere on the structure, morphology and photoluminescence of the Zn1-xMgxO thin films are studied by X-ray diffraction,atomic force microscopy,scanning electron microscopy and photoluminescence spectra. The results indicate that the hexagonal wurtzite type of Zn1-xMgxO can be stabilized up to Mg content xx≤0.35.The grain size of the samples increased by the post_annealing, and the structure of the Zn0.75Mg0.25O film changed from cubic to hexagonal wurtzite type when annealed at 600℃. An appropriate oxygen pressure can reduce both the number of defects and the c-axis stress. But superfluous oxygen is apt to combine with Mg and hinders the growth of hexagonal wurtzite type ZnO. Photoluminescence spectrum indicates that the defect_level peak is mainly related with the zinc vacancy, substitutional O on the zinc site (OZn) and interstitial oxygen vacancies (Oi), and the ultraviolet emission peak has a blue shift due to annealing.


Acta Physica Sinica. 2009 58(5): 3461-3467. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3461-3467. article doi:10.7498/aps.58.3461 10.7498/aps.58.3461 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3461 3461-3467
<![CDATA[Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3468

Bulk GaN material and LED structures on pillar-patterned sapphire substrates (PSS-p) and hole-patterned sapphire substrates (PSS-h) were grown by MOCVD and the characteristic was compared in detail. X-ray diffraction and atomic force microscope measurements show a better crystal quality and surface morphology of GaN on PSS-h than that of GaN on PSS-p, which is due to the lateral growth of GaN on PSS-h observed from cross-sectional scanning electron microscopy. Furthermore, the output power of LED on PSS-p and PSS-h with 20 mA injection current are 46% and 33% higher than LED on conventional sapphire substrate, respectively. The temperature-dependent photoluminesence measurements indicate that the internal quantum efficiencies of all samples are quite close. Therefore, the airgaps between GaN and PSS-h act against the improvement of light extraction efficiency.


Acta Physica Sinica. 2009 58(5): 3468-3473. Published 2009-05-20 ]]>

Bulk GaN material and LED structures on pillar-patterned sapphire substrates (PSS-p) and hole-patterned sapphire substrates (PSS-h) were grown by MOCVD and the characteristic was compared in detail. X-ray diffraction and atomic force microscope measurements show a better crystal quality and surface morphology of GaN on PSS-h than that of GaN on PSS-p, which is due to the lateral growth of GaN on PSS-h observed from cross-sectional scanning electron microscopy. Furthermore, the output power of LED on PSS-p and PSS-h with 20 mA injection current are 46% and 33% higher than LED on conventional sapphire substrate, respectively. The temperature-dependent photoluminesence measurements indicate that the internal quantum efficiencies of all samples are quite close. Therefore, the airgaps between GaN and PSS-h act against the improvement of light extraction efficiency.


Acta Physica Sinica. 2009 58(5): 3468-3473. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3468-3473. article doi:10.7498/aps.58.3468 10.7498/aps.58.3468 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3468 3468-3473
<![CDATA[Numerical simulation of electrical transport characteristics of single layer organic devices]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3474

A numerical model of organic devices,which includes charge injection, transport, space charge effect and trap influence,was discussed in this paper. Both thermionic emission over the barrier and tunneling through the barrier are considered in charge injection into the bulk. The result is in good agreement with the experimental data. Several parameters have been simulated to study the change of J-V characteristics. The current decreases with the increases of the length of device. The current density becomes higher when the hole injecting barrier is smaller. However, when the electronic injecting barrier decreases from 1.7 eV to 0.5 eV, the current density becomes smaller. This is because the electronic mobility is too small, and the electronic injecting current is negligible compared with the hole current. When the electronic injecting barrier is smaller, the built-in potential becomes bigger, under the same applied voltage, the field diminishes, and the hole current becomes smaller. When the barrier is reduced to 0.1 eV, the current density increases. This is because the electronic mobility is too small, and electrons accumulate near the cathode, the electric field around the anode increases and the current increases.


Acta Physica Sinica. 2009 58(5): 3474-3478. Published 2009-05-20 ]]>

A numerical model of organic devices,which includes charge injection, transport, space charge effect and trap influence,was discussed in this paper. Both thermionic emission over the barrier and tunneling through the barrier are considered in charge injection into the bulk. The result is in good agreement with the experimental data. Several parameters have been simulated to study the change of J-V characteristics. The current decreases with the increases of the length of device. The current density becomes higher when the hole injecting barrier is smaller. However, when the electronic injecting barrier decreases from 1.7 eV to 0.5 eV, the current density becomes smaller. This is because the electronic mobility is too small, and the electronic injecting current is negligible compared with the hole current. When the electronic injecting barrier is smaller, the built-in potential becomes bigger, under the same applied voltage, the field diminishes, and the hole current becomes smaller. When the barrier is reduced to 0.1 eV, the current density increases. This is because the electronic mobility is too small, and electrons accumulate near the cathode, the electric field around the anode increases and the current increases.


Acta Physica Sinica. 2009 58(5): 3474-3478. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3474-3478. article doi:10.7498/aps.58.3474 10.7498/aps.58.3474 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3474 3474-3478
<![CDATA[Structure and magnetic properties of stress-induced martensites in ferromagnetic shape memory alloy Mn2NiGa]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3479

In-situ high pressure X-ray diffraction experiments on Heusler-type ferromagnetic shape memory alloy Mn2NiGa under pressure up to 40 GPa have been carried out by using diamond anvil cell device with synchrotron radiation source, and magnetic measurements have also been performed on uninstalled samples by using vibration sample magnetometer. At ambient pressure Mn2NiGa has body centered cubic structure. Two phase transitions in Mn2NiGa were observed during high pressure experiments. The first at about 0.77 GPa is belong to martensitic transformation, and the second at about 20 GPa is isostructural transformation between two different martensites. Meanwhile, a lot of defects and distortion of lattice were generated in martensites due to pressurization. Consequently, coercive force of stress-induced martensites rises up to 204 kA/m and it is almost ten times larger than that of thermo-induced martensites. Pressure processes also make saturation magnetization of martensites decrease rapidly, which reveals the obvious defect effect.


Acta Physica Sinica. 2009 58(5): 3479-3484. Published 2009-05-20 ]]>

In-situ high pressure X-ray diffraction experiments on Heusler-type ferromagnetic shape memory alloy Mn2NiGa under pressure up to 40 GPa have been carried out by using diamond anvil cell device with synchrotron radiation source, and magnetic measurements have also been performed on uninstalled samples by using vibration sample magnetometer. At ambient pressure Mn2NiGa has body centered cubic structure. Two phase transitions in Mn2NiGa were observed during high pressure experiments. The first at about 0.77 GPa is belong to martensitic transformation, and the second at about 20 GPa is isostructural transformation between two different martensites. Meanwhile, a lot of defects and distortion of lattice were generated in martensites due to pressurization. Consequently, coercive force of stress-induced martensites rises up to 204 kA/m and it is almost ten times larger than that of thermo-induced martensites. Pressure processes also make saturation magnetization of martensites decrease rapidly, which reveals the obvious defect effect.


Acta Physica Sinica. 2009 58(5): 3479-3484. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3479-3484. article doi:10.7498/aps.58.3479 10.7498/aps.58.3479 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3479 3479-3484
<![CDATA[On the g factors of 2E state for 3d3ions at trigonal symmetry]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3485

In connection with local structure, the g factors of 2E state are studied by using complete diagonalization method (CDM), with the spinel type crystals ZnAl2O4:Cr3+, ZnGa2O4:Cr3+ and MgAl2O4:Cr3+ as the cases. The slight magnetic interactions, including spin-spin (SS), spin-other-orbit (SOO) and orbit-orbit (OO) interactions are taken into account in our investigations. Theoretical explanations of g factors of 2E state for ZnAl2O4:Cr3+ have been given. The results show that the sign of g‖(E′) for ZnGa2O4:Cr3+ should be negative. And the value of g factors of 2E state for MgAl2O4:Cr3+ have been predicted. It is shown that, the contributions to g factors of 2E state from slight magnetic interactions are appreciable. Compared with the g factors of ground state, the g factors of 2E state are sensitive to the local structure.


Acta Physica Sinica. 2009 58(5): 3485-3490. Published 2009-05-20 ]]>

In connection with local structure, the g factors of 2E state are studied by using complete diagonalization method (CDM), with the spinel type crystals ZnAl2O4:Cr3+, ZnGa2O4:Cr3+ and MgAl2O4:Cr3+ as the cases. The slight magnetic interactions, including spin-spin (SS), spin-other-orbit (SOO) and orbit-orbit (OO) interactions are taken into account in our investigations. Theoretical explanations of g factors of 2E state for ZnAl2O4:Cr3+ have been given. The results show that the sign of g‖(E′) for ZnGa2O4:Cr3+ should be negative. And the value of g factors of 2E state for MgAl2O4:Cr3+ have been predicted. It is shown that, the contributions to g factors of 2E state from slight magnetic interactions are appreciable. Compared with the g factors of ground state, the g factors of 2E state are sensitive to the local structure.


Acta Physica Sinica. 2009 58(5): 3485-3490. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3485-3490. article doi:10.7498/aps.58.3485 10.7498/aps.58.3485 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3485 3485-3490
<![CDATA[Magnetoelectric coupling and magnetoelectric properties of single-phase ABO3 type multiferroic materials]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3491

The anomalies in both the dielectric constant and loss tangent occur at fixed temperature close to the magnetic ordering transition, which have been observed experimentally in multiferroic pervoskite YMnO3 and BiMnO3, indicating coupling between the magnetism and dielectric properties. In this paper, by analyzing the magnetoelectric coupling between magnetic and ferroelectric subsystems, an appropriate coupling term related to a combination of electric polarization and spin correlation is added to system Hamilton expression, Then apply the soft-mode theory for electric subsystem and mean-field approximation under Heisenberg model for magnetic subsystem,magnetoelectric properties have been investigated, including the change of polarization, dielectric constant induced by external magnetic field, and the change of magnetization induced by external electric field. We also make some qualitative comparison and analysis between our results and the experimented ones and give a reasonable interpretation of magnetoelectricity phenomenon in some multiferroic pervoskite materials.


Acta Physica Sinica. 2009 58(5): 3491-3496. Published 2009-05-20 ]]>

The anomalies in both the dielectric constant and loss tangent occur at fixed temperature close to the magnetic ordering transition, which have been observed experimentally in multiferroic pervoskite YMnO3 and BiMnO3, indicating coupling between the magnetism and dielectric properties. In this paper, by analyzing the magnetoelectric coupling between magnetic and ferroelectric subsystems, an appropriate coupling term related to a combination of electric polarization and spin correlation is added to system Hamilton expression, Then apply the soft-mode theory for electric subsystem and mean-field approximation under Heisenberg model for magnetic subsystem,magnetoelectric properties have been investigated, including the change of polarization, dielectric constant induced by external magnetic field, and the change of magnetization induced by external electric field. We also make some qualitative comparison and analysis between our results and the experimented ones and give a reasonable interpretation of magnetoelectricity phenomenon in some multiferroic pervoskite materials.


Acta Physica Sinica. 2009 58(5): 3491-3496. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3491-3496. article doi:10.7498/aps.58.3491 10.7498/aps.58.3491 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3491 3491-3496
<![CDATA[Preparation and laser induced thermoelectric voltage effect of [(SrTiO3)n/(SrTi0.8Nb0.2O3)m]20/LaAlO3 superlattices]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3497

The (SrTiO3)n/(SrTi0.8Nb0.2O3)m superlattices on vicinal-cut LaAlO3 (100) single crystal substrate with tilting angle 10° have been prepared using pulsed laser deposition. The superlattices were characterized by X-ray diffraction, in which regularly distributed satellite peak structure was observed. According to the position of satellite peaks, the superperiod of superlattices was calculated and the deposition rates of SrTiO3 and SrTi0.8Nb0.2O3 were deduced as 0.78 /pulse for SrTiO3 and 0.57 /pulse for SrTi0.8Nb0.2O3. In addition, laser induced thermoelectric voltage (LITV) effect was measured for the first time in these superlattice thin films. This phenomenon indieales that this kind of artificial atomic layer thermopile structure possesses Seebeck anisotropy. It was found that when the thickness of dielectric SrTiO3 layer n=46.8 nm, for conductive SrTi0.8Nb0.2O3 layer with m=19.0 nm and m=11.4 nm, the average peak voltage of LITV signals reaches the maximum U—P=0.7 V/mJ·mm, and the minimum average response time is τ—=124 ns, respectively.


Acta Physica Sinica. 2009 58(5): 3497-3502. Published 2009-05-20 ]]>

The (SrTiO3)n/(SrTi0.8Nb0.2O3)m superlattices on vicinal-cut LaAlO3 (100) single crystal substrate with tilting angle 10° have been prepared using pulsed laser deposition. The superlattices were characterized by X-ray diffraction, in which regularly distributed satellite peak structure was observed. According to the position of satellite peaks, the superperiod of superlattices was calculated and the deposition rates of SrTiO3 and SrTi0.8Nb0.2O3 were deduced as 0.78 /pulse for SrTiO3 and 0.57 /pulse for SrTi0.8Nb0.2O3. In addition, laser induced thermoelectric voltage (LITV) effect was measured for the first time in these superlattice thin films. This phenomenon indieales that this kind of artificial atomic layer thermopile structure possesses Seebeck anisotropy. It was found that when the thickness of dielectric SrTiO3 layer n=46.8 nm, for conductive SrTi0.8Nb0.2O3 layer with m=19.0 nm and m=11.4 nm, the average peak voltage of LITV signals reaches the maximum U—P=0.7 V/mJ·mm, and the minimum average response time is τ—=124 ns, respectively.


Acta Physica Sinica. 2009 58(5): 3497-3502. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3497-3502. article doi:10.7498/aps.58.3497 10.7498/aps.58.3497 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3497 3497-3502
<![CDATA[Preparation of L10-FePt film for perpendicular magnetic recording media by using FePt/Au mutilayers]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3503

FePt/Au mutilayers were deposited on 100℃ MgO(001) single crystal substrate by magnetron sputtering. The influence of the FePt/Au multilayer structure on the ordering temperature, coercivity (HC), perpendicular magnetic anisotropy (PMA), FePt grain size and interparticle exchange coupling (IEC) of films were studied. Results show that the film possesses high HC, excellent PMA, small grain size and weak interparticle exchange coupling after annealing. The results of HRTEM reveal that Au can relieve mismatch between MgO and FePt lattices, leading to excellent PMA. Moreover, the FePt/Au interface energy, the stress energy due to the mismatch between FePt and Au lattices and the diffusion of Au atoms promote the ordering of FePt film. This leads to the decrease of ordering temperature and considerable increase of HC. Au atoms partly diffuse to the boundaries of FePt phase and function as grain finer and particle isolator, which decrease the FePt grain size and IEC.


Acta Physica Sinica. 2009 58(5): 3503-3508. Published 2009-05-20 ]]>

FePt/Au mutilayers were deposited on 100℃ MgO(001) single crystal substrate by magnetron sputtering. The influence of the FePt/Au multilayer structure on the ordering temperature, coercivity (HC), perpendicular magnetic anisotropy (PMA), FePt grain size and interparticle exchange coupling (IEC) of films were studied. Results show that the film possesses high HC, excellent PMA, small grain size and weak interparticle exchange coupling after annealing. The results of HRTEM reveal that Au can relieve mismatch between MgO and FePt lattices, leading to excellent PMA. Moreover, the FePt/Au interface energy, the stress energy due to the mismatch between FePt and Au lattices and the diffusion of Au atoms promote the ordering of FePt film. This leads to the decrease of ordering temperature and considerable increase of HC. Au atoms partly diffuse to the boundaries of FePt phase and function as grain finer and particle isolator, which decrease the FePt grain size and IEC.


Acta Physica Sinica. 2009 58(5): 3503-3508. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3503-3508. article doi:10.7498/aps.58.3503 10.7498/aps.58.3503 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3503 3503-3508
<![CDATA[Magnetization reversal of perpendicularly orientated Nd2Fe14B/α-Fe trilayer]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3509

The full magnetization reversal process of perpendicular orientated Nd2Fe14B/α-Fe trilayer has been investigated by using a micromagnetic method. Both nucleation and pinning fields as well as hysteresis loops have been calculated reliably as functions of Ls (soft layer thickness). In addition, detailed comparison between our results and experimental data has been done. With the demagnetization energy considered, the nucleation field of perpendicular by orientated case is lower than the parallel one and the nucleation occus before the reversal of the applied field. For small Ls, the theoretical coercivity equals to the nucleation field (it equals to pinning filed also). As the thickness of the soft phase increases, the coercivity mechanism changes from nucleation to pinning. For large Ls, however, the coercivity is slightly smaller than the pinning field.


Acta Physica Sinica. 2009 58(5): 3509-3514. Published 2009-05-20 ]]>

The full magnetization reversal process of perpendicular orientated Nd2Fe14B/α-Fe trilayer has been investigated by using a micromagnetic method. Both nucleation and pinning fields as well as hysteresis loops have been calculated reliably as functions of Ls (soft layer thickness). In addition, detailed comparison between our results and experimental data has been done. With the demagnetization energy considered, the nucleation field of perpendicular by orientated case is lower than the parallel one and the nucleation occus before the reversal of the applied field. For small Ls, the theoretical coercivity equals to the nucleation field (it equals to pinning filed also). As the thickness of the soft phase increases, the coercivity mechanism changes from nucleation to pinning. For large Ls, however, the coercivity is slightly smaller than the pinning field.


Acta Physica Sinica. 2009 58(5): 3509-3514. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3509-3514. article doi:10.7498/aps.58.3509 10.7498/aps.58.3509 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3509 3509-3514
<![CDATA[The modeling and analysis of magnetoelectric effect in bilayer nanocomposites]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3515

Based on the elasticity mechanical model, we employ the free_state bilayer magnetoelectric nano_thin film model which introduces the magnetoelectric (ME) theoretical voltage coefficient formula simply. By this way, the ME voltage coefficient of CoFe2O4/Pb (Zr0.52Ti0.48)O3 bilayer has been calculated and analyzed under the corresponding material parameters. The results show that the ME voltage coefficient is reduced significantly when the thickness of substrate increases due to the gripping effect. The optimum volume ratio of piezoelectric film and magnetoelectric film increase when the gripping effect increasing.


Acta Physica Sinica. 2009 58(5): 3515-3519. Published 2009-05-20 ]]>

Based on the elasticity mechanical model, we employ the free_state bilayer magnetoelectric nano_thin film model which introduces the magnetoelectric (ME) theoretical voltage coefficient formula simply. By this way, the ME voltage coefficient of CoFe2O4/Pb (Zr0.52Ti0.48)O3 bilayer has been calculated and analyzed under the corresponding material parameters. The results show that the ME voltage coefficient is reduced significantly when the thickness of substrate increases due to the gripping effect. The optimum volume ratio of piezoelectric film and magnetoelectric film increase when the gripping effect increasing.


Acta Physica Sinica. 2009 58(5): 3515-3519. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3515-3519. article doi:10.7498/aps.58.3515 10.7498/aps.58.3515 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3515 3515-3519
<![CDATA[Effect of DC bias on pressure-induced depolarization of Pb(Nb,Zr,Sn,Ti)O3 ceramics]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3520

The polarization and depolarization of antiferroelectric Pb(Nb,Zr,Sn,Ti)O3 ceramics under dc bias were studied under hydraulic pressure ranging from zero to 250 MPa. It was found that the antiferroelectric ceramic can be induced to a metastable ferroelectric state and that the ceramic at this ferroelectric state can be switched to the antiferroelectric state by using hydraulic pressure. The hydraulic pressure that induces the transition from the ferroelectric to the antiferroelectric states increases with the positive and decreases with the negative dc bias. The electrical energy stored in the poled ceramics at its ferroelectric state releases during the transition from the ferroelectric to antiferroelectric state, which results in a strong current pulse a cross the ceramic. Based on the results, the pressure-electric field phase diagram for polarized PNZST ceramics was established.


Acta Physica Sinica. 2009 58(5): 3520-3524. Published 2009-05-20 ]]>

The polarization and depolarization of antiferroelectric Pb(Nb,Zr,Sn,Ti)O3 ceramics under dc bias were studied under hydraulic pressure ranging from zero to 250 MPa. It was found that the antiferroelectric ceramic can be induced to a metastable ferroelectric state and that the ceramic at this ferroelectric state can be switched to the antiferroelectric state by using hydraulic pressure. The hydraulic pressure that induces the transition from the ferroelectric to the antiferroelectric states increases with the positive and decreases with the negative dc bias. The electrical energy stored in the poled ceramics at its ferroelectric state releases during the transition from the ferroelectric to antiferroelectric state, which results in a strong current pulse a cross the ceramic. Based on the results, the pressure-electric field phase diagram for polarized PNZST ceramics was established.


Acta Physica Sinica. 2009 58(5): 3520-3524. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3520-3524. article doi:10.7498/aps.58.3520 10.7498/aps.58.3520 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3520 3520-3524
<![CDATA[Piezoelectricity of laminated polymer films made of nonporous fluoroethylene and porous polytetrafluoroethylene layers]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3525

The piezoelectrets made of porous polytetrafluoroethylene (PTFE) films and nonporous fluoroethylenepropylene (FEP) films are prepared by using a hot-pressing method. The quasi-static piezoelectric d33-coefficients of such piezoelectret films are measured. The thermal stability of d33-coefficients and dynamic characteristics of charges in the piezoelectret films are investigated. The dynamic d33-coefficients are obtained by analyzing the dielectric resonance spectra of the piezoelectret films. The results show that the piezoelectric d33-coefficients up to 300 pC/N are achieved for the laminated PTFE/FEP films. The d33 value retains 40% of the initial value when the sample was annealed at the temperature of 90℃ for 20 h. Pre-ageing is an effective way to further improve the thermal stability of d33-coefficients. The dominant drift path of the detrapped charges in the shallow traps is most likely along the surface of the PTFE fibers, while charge drift through the solid layer of FEP is possibly prevailing for the charges in the deeper traps. The d33 value determined from the dielectric resonance spectrum is smaller than the quasi-static d33 value, which is mainly due to the enhanced Young's modulus with the increase of frequency.


Acta Physica Sinica. 2009 58(5): 3525-3531. Published 2009-05-20 ]]>

The piezoelectrets made of porous polytetrafluoroethylene (PTFE) films and nonporous fluoroethylenepropylene (FEP) films are prepared by using a hot-pressing method. The quasi-static piezoelectric d33-coefficients of such piezoelectret films are measured. The thermal stability of d33-coefficients and dynamic characteristics of charges in the piezoelectret films are investigated. The dynamic d33-coefficients are obtained by analyzing the dielectric resonance spectra of the piezoelectret films. The results show that the piezoelectric d33-coefficients up to 300 pC/N are achieved for the laminated PTFE/FEP films. The d33 value retains 40% of the initial value when the sample was annealed at the temperature of 90℃ for 20 h. Pre-ageing is an effective way to further improve the thermal stability of d33-coefficients. The dominant drift path of the detrapped charges in the shallow traps is most likely along the surface of the PTFE fibers, while charge drift through the solid layer of FEP is possibly prevailing for the charges in the deeper traps. The d33 value determined from the dielectric resonance spectrum is smaller than the quasi-static d33 value, which is mainly due to the enhanced Young's modulus with the increase of frequency.


Acta Physica Sinica. 2009 58(5): 3525-3531. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3525-3531. article doi:10.7498/aps.58.3525 10.7498/aps.58.3525 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3525 3525-3531
<![CDATA[Numerical analysis of two-dimensional magnetophotonic crystals with structural defects]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3532

The Faraday rotation of two-dimensional magnetophotonic crystals (including those with fourfold-symmetry and non-fourfold-symmetry) with structural defects and the ellipticity of outgoing optical waves are analyzed by using finite-difference frequency-domain (FDFD) method. The numerical simulation results show that the localization of the light wave in the vicinity of central defect occurs in these types of the structure. With increasing Faraday rotation of fourfold-symmetry structures, the change of the ellipticity of outgoing optical waves from these structures is unobvious. In contrast, the increases of the ellipticity of outgoing optical waves are obvious with the raise of Faraday rotation in non-fourfold-symmetry structures. It is concluded that introducing defects to the fourfold-symmetry structure constrains the change of the state of polarization of optical waves. This kind of two-dimensional magnetophotonic crystal with structural defects may be used to manufacture magnetophotonic crystal fiber.


Acta Physica Sinica. 2009 58(5): 3532-3537. Published 2009-05-20 ]]>

The Faraday rotation of two-dimensional magnetophotonic crystals (including those with fourfold-symmetry and non-fourfold-symmetry) with structural defects and the ellipticity of outgoing optical waves are analyzed by using finite-difference frequency-domain (FDFD) method. The numerical simulation results show that the localization of the light wave in the vicinity of central defect occurs in these types of the structure. With increasing Faraday rotation of fourfold-symmetry structures, the change of the ellipticity of outgoing optical waves from these structures is unobvious. In contrast, the increases of the ellipticity of outgoing optical waves are obvious with the raise of Faraday rotation in non-fourfold-symmetry structures. It is concluded that introducing defects to the fourfold-symmetry structure constrains the change of the state of polarization of optical waves. This kind of two-dimensional magnetophotonic crystal with structural defects may be used to manufacture magnetophotonic crystal fiber.


Acta Physica Sinica. 2009 58(5): 3532-3537. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3532-3537. article doi:10.7498/aps.58.3532 10.7498/aps.58.3532 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3532 3532-3537
<![CDATA[Amendment to bertran equation and the weak Fermi resonance characteristic of CS2 in C6H6]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3538

The Raman spectra of CS2 in C6H6 is messured and the Fermi resonance of v1—2v2 in solution and in pure CS2 is obvionsly different.The characteristic parameters are calculated by Berttern equation.It was found that with the concentration of CS2 declining,the ratio of the spectral intensity (R=I655/I796) decreases and the coupling coefficient (W) raises, and the other parameters also change correspondingly. The analysis shows that dissipation coefficient of v01 of CS2 is affected by the concentration of C6H6. Asymmetric frequency shift of v01 and 2v02 are observed in experiment,which is explained by amending the Bertran theory. This report has reference value for the molecule spectrum certification and the understanding and use of Fermi resonance theory.


Acta Physica Sinica. 2009 58(5): 3538-3542. Published 2009-05-20 ]]>

The Raman spectra of CS2 in C6H6 is messured and the Fermi resonance of v1—2v2 in solution and in pure CS2 is obvionsly different.The characteristic parameters are calculated by Berttern equation.It was found that with the concentration of CS2 declining,the ratio of the spectral intensity (R=I655/I796) decreases and the coupling coefficient (W) raises, and the other parameters also change correspondingly. The analysis shows that dissipation coefficient of v01 of CS2 is affected by the concentration of C6H6. Asymmetric frequency shift of v01 and 2v02 are observed in experiment,which is explained by amending the Bertran theory. This report has reference value for the molecule spectrum certification and the understanding and use of Fermi resonance theory.


Acta Physica Sinica. 2009 58(5): 3538-3542. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3538-3542. article doi:10.7498/aps.58.3538 10.7498/aps.58.3538 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3538 3538-3542
<![CDATA[Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time- and space-resolved absorbtion spectroscopy]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3543

A time- and space-resolved circularly polarized pump-probe spectroscopy and its theory are developed, and are used experimentally to study electron spin diffusion transport in intrinsic GaAs quantum wells. The ambipolar spin diffusion coefficient of Das=37.5±15 cm2/s is obtained at room temperature, and is smaller than that in a doped GaAs quantum well obtained by spin grating. The difference is explained based on “hole Coulomb drag' effect which slows the diffusion transport of electron spin packet.


Acta Physica Sinica. 2009 58(5): 3543-3547. Published 2009-05-20 ]]>

A time- and space-resolved circularly polarized pump-probe spectroscopy and its theory are developed, and are used experimentally to study electron spin diffusion transport in intrinsic GaAs quantum wells. The ambipolar spin diffusion coefficient of Das=37.5±15 cm2/s is obtained at room temperature, and is smaller than that in a doped GaAs quantum well obtained by spin grating. The difference is explained based on “hole Coulomb drag' effect which slows the diffusion transport of electron spin packet.


Acta Physica Sinica. 2009 58(5): 3543-3547. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3543-3547. article doi:10.7498/aps.58.3543 10.7498/aps.58.3543 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3543 3543-3547
<![CDATA[The electron dynamics of semimetal Sb films]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3548

The time resolved pump-probe spectroscopy was used to study the ultrafast carrier dynamics of semimetal Sb films at different wavelengths and pump fluences. The profiles of differential transmission versus delayed time showed sharp oscillation near the zero-time_delayed point. A positive absorption saturation peak turned into a negative absorption peak in subpicosecond time. Then the latter began to attenuate and again showed absorption saturation eventually in several picoseconds. The amplitudes of the positive and negative peaks were proportional to the pump fluence and wavelength. These phenomena are analyzed in this article and explained reasonably and semi-quantitatively by introducing the “defect model' and considering fast capture and release by “defect states' of hot electrons.


Acta Physica Sinica. 2009 58(5): 3548-3552. Published 2009-05-20 ]]>

The time resolved pump-probe spectroscopy was used to study the ultrafast carrier dynamics of semimetal Sb films at different wavelengths and pump fluences. The profiles of differential transmission versus delayed time showed sharp oscillation near the zero-time_delayed point. A positive absorption saturation peak turned into a negative absorption peak in subpicosecond time. Then the latter began to attenuate and again showed absorption saturation eventually in several picoseconds. The amplitudes of the positive and negative peaks were proportional to the pump fluence and wavelength. These phenomena are analyzed in this article and explained reasonably and semi-quantitatively by introducing the “defect model' and considering fast capture and release by “defect states' of hot electrons.


Acta Physica Sinica. 2009 58(5): 3548-3552. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3548-3552. article doi:10.7498/aps.58.3548 10.7498/aps.58.3548 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3548 3548-3552
<![CDATA[Dynamics study of the adsorption and diffusion in early growth stage of AlN/α-Al2O3(0001) films]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3553

The research of temperature effect on the surface adsorption and diffusion is an important problem for the initial growth mechanism of AlN/α-Al2O3(0001) thin films. Using the ab initio molecular dynamics method based on the first principles, the adsorption process, system energy, dynamic track and the diffusion coefficient are calculated at temperatures from 300℃ to 800℃. The results indicate that the adsorption process can be divided into three stages, the physical adsorption, the chemical adsorption and the stable surface growth state. With the temperature increasing, the average diffusivity of the particles at α-Al2O3(0001) surface is enhanced in the bonding process. The diffusion coefficient of N atom is higher than that of the Al atom, especially in the physical adsorption stage. At higher temperatures (over 700℃), the role of desorption of the N atom is markedly strengthened, so it is unfavorable to the stable absorption of AlN. The temperature between 500℃ and 700℃ is beneficial to the stable adsorption and the growth of the AlN on α-Al2O3(0001) surface.


Acta Physica Sinica. 2009 58(5): 3553-3559. Published 2009-05-20 ]]>

The research of temperature effect on the surface adsorption and diffusion is an important problem for the initial growth mechanism of AlN/α-Al2O3(0001) thin films. Using the ab initio molecular dynamics method based on the first principles, the adsorption process, system energy, dynamic track and the diffusion coefficient are calculated at temperatures from 300℃ to 800℃. The results indicate that the adsorption process can be divided into three stages, the physical adsorption, the chemical adsorption and the stable surface growth state. With the temperature increasing, the average diffusivity of the particles at α-Al2O3(0001) surface is enhanced in the bonding process. The diffusion coefficient of N atom is higher than that of the Al atom, especially in the physical adsorption stage. At higher temperatures (over 700℃), the role of desorption of the N atom is markedly strengthened, so it is unfavorable to the stable absorption of AlN. The temperature between 500℃ and 700℃ is beneficial to the stable adsorption and the growth of the AlN on α-Al2O3(0001) surface.


Acta Physica Sinica. 2009 58(5): 3553-3559. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3553-3559. article doi:10.7498/aps.58.3553 10.7498/aps.58.3553 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3553 3553-3559
<![CDATA[Mid-infrared photoluminescence of PbSe/PbSrSe multiple quantum wells grown by molecular beam epitaxy]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3560

Mid-Infrared photoluminescence of PbSe/PbSrSe multiple quantum wells (MQWs) grown by molecular beam epitaxy is studied. High-order satellite peaks are observed by high resolution X-ray diffraction, which indicates the quantum well structure has sharp interfaces. Temperature dependence of photoluminescence spectra shows that the MQWs make good confinement of electrons and holes. At the same measurement temperature, the photoluminescence peaks of the MQW sample show a clear blue shift compared with that of the bulk PbSe material. We find that the intensity of photoluminescence is dependent on the measurement temperature. When temperature increases from 150 K to 230 K, the PL intensity reaches its maximum at 230 K, and with further increasing the intensity decreases slowly. We can still observe strong PL intensity above room temperature, which indicates MQWs have the potential to be used in room-temperature_operating mid-infrared optoelectronic devices.


Acta Physica Sinica. 2009 58(5): 3560-3564. Published 2009-05-20 ]]>

Mid-Infrared photoluminescence of PbSe/PbSrSe multiple quantum wells (MQWs) grown by molecular beam epitaxy is studied. High-order satellite peaks are observed by high resolution X-ray diffraction, which indicates the quantum well structure has sharp interfaces. Temperature dependence of photoluminescence spectra shows that the MQWs make good confinement of electrons and holes. At the same measurement temperature, the photoluminescence peaks of the MQW sample show a clear blue shift compared with that of the bulk PbSe material. We find that the intensity of photoluminescence is dependent on the measurement temperature. When temperature increases from 150 K to 230 K, the PL intensity reaches its maximum at 230 K, and with further increasing the intensity decreases slowly. We can still observe strong PL intensity above room temperature, which indicates MQWs have the potential to be used in room-temperature_operating mid-infrared optoelectronic devices.


Acta Physica Sinica. 2009 58(5): 3560-3564. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3560-3564. article doi:10.7498/aps.58.3560 10.7498/aps.58.3560 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3560 3560-3564
<![CDATA[Effect of Dy on properties of red long-afterglow phosphor Sr3Al2O6:Eu2+,Dy3+]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3565

The red long afterglow phosphor Sr3Al2O6:Eu2+,Dy3+ was prepared by sol-gel method. The crystal structure was characterized by X-ray diffraction. The results reveal that the samples are composed of single Sr3Al2O6 phase at 1200℃, and the small amount of doped rare earth ions (Eu2+ and Dy3+) has no effect on the Sr3Al2O6 phase composition. The excitation, emission and afterglow spectra were investigated by fluorescence spectrophotometer technique. The broad excitation spectra in the range of 400—550 nm were found in the Sr3Al2O6:Eu2+ and Sr3Al2O6:Eu2+,Dy3+ phosphors. The broad band spectrum is associated with defects and vacancies of host material and the peak at 530.1 nm can be assigned to the recombination of donor-acceptor pairs of Dy·Sr-V″Sr from dysprosium doping in the Sr3Al2O6. With the increasing concentration of Dy below 0.03, the emission intensity of Sr3-0.02-yAl2O6:0.02Eu2+,yDy3+ phosphors increases, and the samples exhibit the red light emission spectra with the main emission peak at 612 nm under an excitation of 473 nm. The red emission has a broad-band feature, belonging to the emission of the 4f65d1→4f7 of Eu2+ions. With the increasing concentration of Dy within the range of 0.03—0.06, there was a new emission peak in the green region, and the emission intensities of the two peaks at 530 nm and 612 nm decrease. The afterglow time of the Sr2.95Al2O6:0.02Eu2+,0.03Dy3+ phosphors lasts 540s(≥1 mcd/m2) after removal of excitation. The Dy3+ ions are auxiliary activator in the Sr3Al2O6:Eu2+,Dy3+ phosphors.


Acta Physica Sinica. 2009 58(5): 3565-3571. Published 2009-05-20 ]]>

The red long afterglow phosphor Sr3Al2O6:Eu2+,Dy3+ was prepared by sol-gel method. The crystal structure was characterized by X-ray diffraction. The results reveal that the samples are composed of single Sr3Al2O6 phase at 1200℃, and the small amount of doped rare earth ions (Eu2+ and Dy3+) has no effect on the Sr3Al2O6 phase composition. The excitation, emission and afterglow spectra were investigated by fluorescence spectrophotometer technique. The broad excitation spectra in the range of 400—550 nm were found in the Sr3Al2O6:Eu2+ and Sr3Al2O6:Eu2+,Dy3+ phosphors. The broad band spectrum is associated with defects and vacancies of host material and the peak at 530.1 nm can be assigned to the recombination of donor-acceptor pairs of Dy·Sr-V″Sr from dysprosium doping in the Sr3Al2O6. With the increasing concentration of Dy below 0.03, the emission intensity of Sr3-0.02-yAl2O6:0.02Eu2+,yDy3+ phosphors increases, and the samples exhibit the red light emission spectra with the main emission peak at 612 nm under an excitation of 473 nm. The red emission has a broad-band feature, belonging to the emission of the 4f65d1→4f7 of Eu2+ions. With the increasing concentration of Dy within the range of 0.03—0.06, there was a new emission peak in the green region, and the emission intensities of the two peaks at 530 nm and 612 nm decrease. The afterglow time of the Sr2.95Al2O6:0.02Eu2+,0.03Dy3+ phosphors lasts 540s(≥1 mcd/m2) after removal of excitation. The Dy3+ ions are auxiliary activator in the Sr3Al2O6:Eu2+,Dy3+ phosphors.


Acta Physica Sinica. 2009 58(5): 3565-3571. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3565-3571. article doi:10.7498/aps.58.3565 10.7498/aps.58.3565 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3565 3565-3571
<![CDATA[The fluorescence spectral characteristics and the emission mechanism of ethanol excimer in water solution]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3572

The fluorescence spectra of ethanol-water solution excited by UV-light have been studied, in which there is a broad and featureless fluorescence spectrum with the peak at 410 nm. It is considered that when the clustered molecules with a special long chain structure approach each other, the excimer is formed between the excited state and ground state cluster monomers, which can emit fluorescence. According to the experimental result and the energy transfer theory, we know that an electron transfer complex is formed by the excimer and the cluster monomer in the excited state. Based on Mulliken theory and the quantum mechanics theory, the energy of ground state EbN and excited state EbE, as well as the electrostatic interaction energy Es which is caused by electron migration from donor to acceptor, have been calculated, respectively. Based on the theory of one-dimensional harmonic vibrator model, the energy valley in the potential energy curve when the excimer is formed has been simplified. Thus the potential energy function and the energy value of the excimer formed by the clusters in the critical distance can be calculated, and then the electron migration electrostatic interaction energy can be gotten too. Accordingly the fluorescence emission mechanism of the broad and featureless fluorescence peak has been explained theoretically.


Acta Physica Sinica. 2009 58(5): 3572-3577. Published 2009-05-20 ]]>

The fluorescence spectra of ethanol-water solution excited by UV-light have been studied, in which there is a broad and featureless fluorescence spectrum with the peak at 410 nm. It is considered that when the clustered molecules with a special long chain structure approach each other, the excimer is formed between the excited state and ground state cluster monomers, which can emit fluorescence. According to the experimental result and the energy transfer theory, we know that an electron transfer complex is formed by the excimer and the cluster monomer in the excited state. Based on Mulliken theory and the quantum mechanics theory, the energy of ground state EbN and excited state EbE, as well as the electrostatic interaction energy Es which is caused by electron migration from donor to acceptor, have been calculated, respectively. Based on the theory of one-dimensional harmonic vibrator model, the energy valley in the potential energy curve when the excimer is formed has been simplified. Thus the potential energy function and the energy value of the excimer formed by the clusters in the critical distance can be calculated, and then the electron migration electrostatic interaction energy can be gotten too. Accordingly the fluorescence emission mechanism of the broad and featureless fluorescence peak has been explained theoretically.


Acta Physica Sinica. 2009 58(5): 3572-3577. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3572-3577. article doi:10.7498/aps.58.3572 10.7498/aps.58.3572 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3572 3572-3577
<![CDATA[The third-order nonlinear optical properties of a side-chain conjugated polythiophene film]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3578

A novel side-chain conjugated polythiophene derivative poly[3-(5′-octyl-thienylene-vinyl)-thiophene] (POTVTh) was synthesized. The polymer films showed a broad absorption band and a narrow bandgap of about 1.82 eV. The third order nonlinear optical properties of the film were measured by Z-scan technique at 800 nm, which showed the nonlinear absoption coefficient, the nonlinear optical refractive index and third order nonlinear optical susceptibility as 5.63×10-7cm/W, -6.38×10-11cm2/W and 4.32×10-9esu, respectively. The results are one to two orders of magnitude larger than those of normal conjugated polymers without conjugated side-chain, indicating the good nonlinear optical properties of the polymer.


Acta Physica Sinica. 2009 58(5): 3578-3583. Published 2009-05-20 ]]>

A novel side-chain conjugated polythiophene derivative poly[3-(5′-octyl-thienylene-vinyl)-thiophene] (POTVTh) was synthesized. The polymer films showed a broad absorption band and a narrow bandgap of about 1.82 eV. The third order nonlinear optical properties of the film were measured by Z-scan technique at 800 nm, which showed the nonlinear absoption coefficient, the nonlinear optical refractive index and third order nonlinear optical susceptibility as 5.63×10-7cm/W, -6.38×10-11cm2/W and 4.32×10-9esu, respectively. The results are one to two orders of magnitude larger than those of normal conjugated polymers without conjugated side-chain, indicating the good nonlinear optical properties of the polymer.


Acta Physica Sinica. 2009 58(5): 3578-3583. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3578-3583. article doi:10.7498/aps.58.3578 10.7498/aps.58.3578 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3578 3578-3583
<![CDATA[Use of Monte Carlo simulations for the scatter events analysis of PET scanners]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3584

Monte Carlo simulation is an essential tool to assist in the design of new medical imaging devices for emission tomography. This paper modeled the full 3D whole body PET scanner and 2D animal PET scanner with septa using Monte Carlo simulation code GATE based on Geant4, analyzed the scatter fraction, scatter distribution, multiple scatter events, and scatter events from outside of FOV under 3D acquisition mode and scatter events from the septa under 2D acquisition mode. For the critical problems of 3D scatter correction: multiple scatter events and scatter events from outside of FOV, we designed additional experiments, got the fitted relationship between the percentage of multiple scatter events and the cross sectional area of the phantom, and the effects of the scatter events from outside of FOV at different ring positions; for the 2D scatter correction, we separated the scatter events from septa for analysis, and provided a quantitative reference for the elimination of these events or introduction into the procedure of reconstruction.


Acta Physica Sinica. 2009 58(5): 3584-3591. Published 2009-05-20 ]]>

Monte Carlo simulation is an essential tool to assist in the design of new medical imaging devices for emission tomography. This paper modeled the full 3D whole body PET scanner and 2D animal PET scanner with septa using Monte Carlo simulation code GATE based on Geant4, analyzed the scatter fraction, scatter distribution, multiple scatter events, and scatter events from outside of FOV under 3D acquisition mode and scatter events from the septa under 2D acquisition mode. For the critical problems of 3D scatter correction: multiple scatter events and scatter events from outside of FOV, we designed additional experiments, got the fitted relationship between the percentage of multiple scatter events and the cross sectional area of the phantom, and the effects of the scatter events from outside of FOV at different ring positions; for the 2D scatter correction, we separated the scatter events from septa for analysis, and provided a quantitative reference for the elimination of these events or introduction into the procedure of reconstruction.


Acta Physica Sinica. 2009 58(5): 3584-3591. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3584-3591. article doi:10.7498/aps.58.3584 10.7498/aps.58.3584 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3584 3584-3591
<![CDATA[Analysis of synchronization in the varying-period slow-wave structures]]> //m.suprmerch.com/en/article/doi/10.7498/aps.58.3592

To utilize the interaction between the field and the electron beam in a traveling wave tube (TWT), the velocity of electrons and the longitudinal phase velocity of field should be made approximately equal. But when the electromagnetic energy increases, the electrons are slowed down and the synchronization condition is no longer satisfied in periodic structures. However, the varying-period slow-wave structure can be used to maintain the synchronization in the whole interaction section. This structure also has the advantages of space harmonic selectivity and wide bandwidth. The space harmonic in varying-period slow-wave structures is analyzed here. The synchronization condition of one space harmonic with the electron beam during the whole interaction process is presented in this paper. And the folded waveguide with varying period is analyzed as an example.


Acta Physica Sinica. 2009 58(5): 3592-3596. Published 2009-05-20 ]]>

To utilize the interaction between the field and the electron beam in a traveling wave tube (TWT), the velocity of electrons and the longitudinal phase velocity of field should be made approximately equal. But when the electromagnetic energy increases, the electrons are slowed down and the synchronization condition is no longer satisfied in periodic structures. However, the varying-period slow-wave structure can be used to maintain the synchronization in the whole interaction section. This structure also has the advantages of space harmonic selectivity and wide bandwidth. The space harmonic in varying-period slow-wave structures is analyzed here. The synchronization condition of one space harmonic with the electron beam during the whole interaction process is presented in this paper. And the folded waveguide with varying period is analyzed as an example.


Acta Physica Sinica. 2009 58(5): 3592-3596. Published 2009-05-20 ]]>
2009-03-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2009 58(5): 3592-3596. article doi:10.7498/aps.58.3592 10.7498/aps.58.3592 Acta Physica Sinica 58 5 2009-05-20 //m.suprmerch.com/en/article/doi/10.7498/aps.58.3592 3592-3596